JPS61144872A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61144872A
JPS61144872A JP59267712A JP26771284A JPS61144872A JP S61144872 A JPS61144872 A JP S61144872A JP 59267712 A JP59267712 A JP 59267712A JP 26771284 A JP26771284 A JP 26771284A JP S61144872 A JPS61144872 A JP S61144872A
Authority
JP
Japan
Prior art keywords
contact hole
film
polycrystalline silicon
resistance
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59267712A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0257707B2 (enrdf_load_stackoverflow
Inventor
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59267712A priority Critical patent/JPS61144872A/ja
Publication of JPS61144872A publication Critical patent/JPS61144872A/ja
Publication of JPH0257707B2 publication Critical patent/JPH0257707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59267712A 1984-12-19 1984-12-19 半導体装置 Granted JPS61144872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267712A JPS61144872A (ja) 1984-12-19 1984-12-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267712A JPS61144872A (ja) 1984-12-19 1984-12-19 半導体装置

Publications (2)

Publication Number Publication Date
JPS61144872A true JPS61144872A (ja) 1986-07-02
JPH0257707B2 JPH0257707B2 (enrdf_load_stackoverflow) 1990-12-05

Family

ID=17448500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267712A Granted JPS61144872A (ja) 1984-12-19 1984-12-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS61144872A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63205951A (ja) * 1987-02-19 1988-08-25 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 安定な低抵抗コンタクト
JPH01194335A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 半導体装置
JPH0228320A (ja) * 1988-04-06 1990-01-30 Fujitsu Ltd 半導体装置の製造方法
JPH0283978A (ja) * 1988-09-20 1990-03-26 Nec Corp 半導体装置
JPH02199827A (ja) * 1989-01-30 1990-08-08 Hitachi Ltd 配線形成方法
US5436489A (en) * 1993-03-24 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
JPH0917791A (ja) * 1996-08-02 1997-01-17 Hitachi Ltd 半導体装置の製造方法
US5633525A (en) * 1994-11-11 1997-05-27 Fuji Electric Co., Ltd. Lateral field effect transistor
US6166416A (en) * 1995-12-07 2000-12-26 Hyundai Electronics Industries Co., Ltd. CMOS analog semiconductor apparatus and fabrication method thereof
US6414738B1 (en) 1997-03-31 2002-07-02 Seiko Epson Corporation Display
US6529251B2 (en) * 1999-02-23 2003-03-04 Sharp Kabushiki Kaisha Liquid crystal display device and method of manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63205951A (ja) * 1987-02-19 1988-08-25 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 安定な低抵抗コンタクト
JPH01194335A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 半導体装置
JPH0228320A (ja) * 1988-04-06 1990-01-30 Fujitsu Ltd 半導体装置の製造方法
JPH0283978A (ja) * 1988-09-20 1990-03-26 Nec Corp 半導体装置
JPH02199827A (ja) * 1989-01-30 1990-08-08 Hitachi Ltd 配線形成方法
US5436489A (en) * 1993-03-24 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
US5633525A (en) * 1994-11-11 1997-05-27 Fuji Electric Co., Ltd. Lateral field effect transistor
US6166416A (en) * 1995-12-07 2000-12-26 Hyundai Electronics Industries Co., Ltd. CMOS analog semiconductor apparatus and fabrication method thereof
JPH0917791A (ja) * 1996-08-02 1997-01-17 Hitachi Ltd 半導体装置の製造方法
US6414738B1 (en) 1997-03-31 2002-07-02 Seiko Epson Corporation Display
US6529251B2 (en) * 1999-02-23 2003-03-04 Sharp Kabushiki Kaisha Liquid crystal display device and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0257707B2 (enrdf_load_stackoverflow) 1990-12-05

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Legal Events

Date Code Title Description
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