JPS6113388B2 - - Google Patents
Info
- Publication number
- JPS6113388B2 JPS6113388B2 JP52026984A JP2698477A JPS6113388B2 JP S6113388 B2 JPS6113388 B2 JP S6113388B2 JP 52026984 A JP52026984 A JP 52026984A JP 2698477 A JP2698477 A JP 2698477A JP S6113388 B2 JPS6113388 B2 JP S6113388B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- active region
- polycrystalline silicon
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 37
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- 230000015654 memory Effects 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2698477A JPS53112686A (en) | 1977-03-14 | 1977-03-14 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2698477A JPS53112686A (en) | 1977-03-14 | 1977-03-14 | Manufacture for semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58050464A Division JPS58175861A (ja) | 1983-03-28 | 1983-03-28 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53112686A JPS53112686A (en) | 1978-10-02 |
| JPS6113388B2 true JPS6113388B2 (US20080293856A1-20081127-C00150.png) | 1986-04-12 |
Family
ID=12208418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2698477A Granted JPS53112686A (en) | 1977-03-14 | 1977-03-14 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53112686A (US20080293856A1-20081127-C00150.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS647615U (US20080293856A1-20081127-C00150.png) * | 1987-06-30 | 1989-01-17 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5565458A (en) * | 1978-11-10 | 1980-05-16 | Nec Corp | Memory cell |
| JPS57114272A (en) * | 1981-01-06 | 1982-07-16 | Nec Corp | Semiconductor memory |
| JPS57186354A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory storage and manufacture thereof |
| JPH01152661A (ja) * | 1988-06-20 | 1989-06-15 | Hitachi Ltd | 半導体メモリ |
-
1977
- 1977-03-14 JP JP2698477A patent/JPS53112686A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS647615U (US20080293856A1-20081127-C00150.png) * | 1987-06-30 | 1989-01-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53112686A (en) | 1978-10-02 |
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