JPS61125150A - ３次元半導体装置の製造方法 - Google Patents
３次元半導体装置の製造方法Info
- Publication number
- JPS61125150A JPS61125150A JP24631084A JP24631084A JPS61125150A JP S61125150 A JPS61125150 A JP S61125150A JP 24631084 A JP24631084 A JP 24631084A JP 24631084 A JP24631084 A JP 24631084A JP S61125150 A JPS61125150 A JP S61125150A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- layer
- forming
- film
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 58
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 210000003141 lower extremity Anatomy 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000008591 skin barrier function Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24631084A JPS61125150A (ja) | 1984-11-22 | 1984-11-22 | ３次元半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24631084A JPS61125150A (ja) | 1984-11-22 | 1984-11-22 | ３次元半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61125150A true JPS61125150A (ja) | 1986-06-12 |
| JPH023301B2 JPH023301B2 (enrdf_load_stackoverflow) | 1990-01-23 |
Family
ID=17146648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24631084A Granted JPS61125150A (ja) | 1984-11-22 | 1984-11-22 | ３次元半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61125150A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613575A (ja) * | 1990-07-31 | 1994-01-21 | Internatl Business Mach Corp <Ibm> | スタック形半導体構造体及びその形成方法 |
| US5489554A (en) * | 1992-07-21 | 1996-02-06 | Hughes Aircraft Company | Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer |
| US7375401B2 (en) | 1996-02-23 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Static random access memory using thin film transistors |
-
1984
- 1984-11-22 JP JP24631084A patent/JPS61125150A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613575A (ja) * | 1990-07-31 | 1994-01-21 | Internatl Business Mach Corp <Ibm> | スタック形半導体構造体及びその形成方法 |
| US5489554A (en) * | 1992-07-21 | 1996-02-06 | Hughes Aircraft Company | Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer |
| US7375401B2 (en) | 1996-02-23 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Static random access memory using thin film transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH023301B2 (enrdf_load_stackoverflow) | 1990-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |