JPS61102752A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JPS61102752A JPS61102752A JP22408184A JP22408184A JPS61102752A JP S61102752 A JPS61102752 A JP S61102752A JP 22408184 A JP22408184 A JP 22408184A JP 22408184 A JP22408184 A JP 22408184A JP S61102752 A JPS61102752 A JP S61102752A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- deposited
- film
- base insulating
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000007790 scraping Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22408184A JPS61102752A (ja) | 1984-10-26 | 1984-10-26 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22408184A JPS61102752A (ja) | 1984-10-26 | 1984-10-26 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61102752A true JPS61102752A (ja) | 1986-05-21 |
| JPH0337297B2 JPH0337297B2 (en, 2012) | 1991-06-05 |
Family
ID=16808258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22408184A Granted JPS61102752A (ja) | 1984-10-26 | 1984-10-26 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61102752A (en, 2012) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737853A (en) * | 1980-08-18 | 1982-03-02 | Toshiba Corp | Forming method for multilayer thin-film |
-
1984
- 1984-10-26 JP JP22408184A patent/JPS61102752A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737853A (en) * | 1980-08-18 | 1982-03-02 | Toshiba Corp | Forming method for multilayer thin-film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0337297B2 (en, 2012) | 1991-06-05 |
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