JPS6091675A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6091675A
JPS6091675A JP58199368A JP19936883A JPS6091675A JP S6091675 A JPS6091675 A JP S6091675A JP 58199368 A JP58199368 A JP 58199368A JP 19936883 A JP19936883 A JP 19936883A JP S6091675 A JPS6091675 A JP S6091675A
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
protection diode
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58199368A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0441512B2 (enExample
Inventor
Osamu Ishikawa
修 石川
Takeya Ezaki
豪弥 江崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58199368A priority Critical patent/JPS6091675A/ja
Publication of JPS6091675A publication Critical patent/JPS6091675A/ja
Publication of JPH0441512B2 publication Critical patent/JPH0441512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP58199368A 1983-10-25 1983-10-25 半導体装置 Granted JPS6091675A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58199368A JPS6091675A (ja) 1983-10-25 1983-10-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58199368A JPS6091675A (ja) 1983-10-25 1983-10-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS6091675A true JPS6091675A (ja) 1985-05-23
JPH0441512B2 JPH0441512B2 (enExample) 1992-07-08

Family

ID=16406592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58199368A Granted JPS6091675A (ja) 1983-10-25 1983-10-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS6091675A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129779A (ja) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd 高耐圧半導体装置
JPH03229469A (ja) * 1990-02-05 1991-10-11 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
EP0632501A1 (en) * 1993-07-01 1995-01-04 Philips Electronics Uk Limited A semiconductor device including protection means
JP2006261376A (ja) * 2005-03-17 2006-09-28 Mitsubishi Electric Corp ダイオード及び半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129779A (ja) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd 高耐圧半導体装置
JPH03229469A (ja) * 1990-02-05 1991-10-11 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
EP0632501A1 (en) * 1993-07-01 1995-01-04 Philips Electronics Uk Limited A semiconductor device including protection means
JP2006261376A (ja) * 2005-03-17 2006-09-28 Mitsubishi Electric Corp ダイオード及び半導体装置

Also Published As

Publication number Publication date
JPH0441512B2 (enExample) 1992-07-08

Similar Documents

Publication Publication Date Title
JPH0626253B2 (ja) 長さの短い拡散領域を含む半導体素子の製造方法
JP3217554B2 (ja) 高耐圧半導体装置
JPH0955439A (ja) 半導体装置およびその製造方法
JPS6091675A (ja) 半導体装置
US5635743A (en) Semiconductor device having an increased withstand voltage against an inverse surge voltage
JPS61150280A (ja) 縦型ｍｏｓトランジスタ
JPS63137478A (ja) 保護回路をもつ半導体装置の製造方法
US6458667B1 (en) High power PMOS device
JPS62211954A (ja) 半導体装置
US20030207509A1 (en) Semiconductor integrated circuit device and manufacture method therefore
JPH05343667A (ja) 伝導度変調型ｍｏｓｆｅｔの製造方法
JP3130219B2 (ja) 半導体装置
JP3059009B2 (ja) 半導体装置およびその製造方法
KR970010684B1 (ko) 기판이 높은 불순물 농도를 가지는 soi 소자 구조
JPH04151875A (ja) 二重拡散型ｍｏｓトランジスタ
JPS61100975A (ja) 接合形電界効果トランジスタ
JP2958652B2 (ja) 半導体装置
JPH0320081A (ja) 半導体集積回路
JPH03242976A (ja) 半導体装置
JPS61256674A (ja) 半導体装置
JPS63185693A (ja) 半導体集積回路装置
JPS58223369A (ja) 電界効果トランジスタ
JPS6197973A (ja) Ｍｏｓｆｅｔの製造方法
JPS62179758A (ja) 相補型半導体装置
JPS59105360A (ja) 半導体集積回路装置