JPH0441512B2 - - Google Patents

Info

Publication number
JPH0441512B2
JPH0441512B2 JP58199368A JP19936883A JPH0441512B2 JP H0441512 B2 JPH0441512 B2 JP H0441512B2 JP 58199368 A JP58199368 A JP 58199368A JP 19936883 A JP19936883 A JP 19936883A JP H0441512 B2 JPH0441512 B2 JP H0441512B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
type
field effect
protection diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58199368A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6091675A (ja
Inventor
Osamu Ishikawa
Takeya Ezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58199368A priority Critical patent/JPS6091675A/ja
Publication of JPS6091675A publication Critical patent/JPS6091675A/ja
Publication of JPH0441512B2 publication Critical patent/JPH0441512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP58199368A 1983-10-25 1983-10-25 半導体装置 Granted JPS6091675A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58199368A JPS6091675A (ja) 1983-10-25 1983-10-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58199368A JPS6091675A (ja) 1983-10-25 1983-10-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS6091675A JPS6091675A (ja) 1985-05-23
JPH0441512B2 true JPH0441512B2 (enExample) 1992-07-08

Family

ID=16406592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58199368A Granted JPS6091675A (ja) 1983-10-25 1983-10-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS6091675A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129779A (ja) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd 高耐圧半導体装置
JPH03229469A (ja) * 1990-02-05 1991-10-11 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
GB9313651D0 (en) * 1993-07-01 1993-08-18 Philips Electronics Uk Ltd A semiconductor device
JP4986404B2 (ja) * 2005-03-17 2012-07-25 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
JPS6091675A (ja) 1985-05-23

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