JPS609153A - 半導体集積回路内抵抗体の抵抗値調整方法 - Google Patents

半導体集積回路内抵抗体の抵抗値調整方法

Info

Publication number
JPS609153A
JPS609153A JP58116160A JP11616083A JPS609153A JP S609153 A JPS609153 A JP S609153A JP 58116160 A JP58116160 A JP 58116160A JP 11616083 A JP11616083 A JP 11616083A JP S609153 A JPS609153 A JP S609153A
Authority
JP
Japan
Prior art keywords
resistance value
resistor
conductivity type
integrated circuit
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58116160A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426219B2 (enrdf_load_stackoverflow
Inventor
Katsuro Mizukoshi
克郎 水越
Mikio Hongo
幹雄 本郷
Takeoki Miyauchi
宮内　建興
Takao Kawanabe
川那部　隆夫
Morio Inoue
井上　盛生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58116160A priority Critical patent/JPS609153A/ja
Publication of JPS609153A publication Critical patent/JPS609153A/ja
Publication of JPH0426219B2 publication Critical patent/JPH0426219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP58116160A 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法 Granted JPS609153A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58116160A JPS609153A (ja) 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58116160A JPS609153A (ja) 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法

Publications (2)

Publication Number Publication Date
JPS609153A true JPS609153A (ja) 1985-01-18
JPH0426219B2 JPH0426219B2 (enrdf_load_stackoverflow) 1992-05-06

Family

ID=14680258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58116160A Granted JPS609153A (ja) 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法

Country Status (1)

Country Link
JP (1) JPS609153A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085550A (ja) * 1983-10-17 1985-05-15 Hitachi Ltd 半導体集積回路の抵抗値調整方法
JPH01296656A (ja) * 1988-05-25 1989-11-30 Hitachi Ltd 半導体装置
JP2008159608A (ja) * 2006-12-20 2008-07-10 Fujitsu Ltd 半導体装置、半導体装置の製造方法および半導体装置の設計装置
JP2020161644A (ja) * 2019-03-26 2020-10-01 ラピスセミコンダクタ株式会社 電圧クランプ回路及び集積回路。

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085550A (ja) * 1983-10-17 1985-05-15 Hitachi Ltd 半導体集積回路の抵抗値調整方法
JPH01296656A (ja) * 1988-05-25 1989-11-30 Hitachi Ltd 半導体装置
JP2008159608A (ja) * 2006-12-20 2008-07-10 Fujitsu Ltd 半導体装置、半導体装置の製造方法および半導体装置の設計装置
US8319277B2 (en) 2006-12-20 2012-11-27 Fujitsu Limited Semiconductor device, method of manufacturing same, and apparatus for designing same
JP2020161644A (ja) * 2019-03-26 2020-10-01 ラピスセミコンダクタ株式会社 電圧クランプ回路及び集積回路。

Also Published As

Publication number Publication date
JPH0426219B2 (enrdf_load_stackoverflow) 1992-05-06

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