JPS6342406B2 - - Google Patents
Info
- Publication number
- JPS6342406B2 JPS6342406B2 JP56030113A JP3011381A JPS6342406B2 JP S6342406 B2 JPS6342406 B2 JP S6342406B2 JP 56030113 A JP56030113 A JP 56030113A JP 3011381 A JP3011381 A JP 3011381A JP S6342406 B2 JPS6342406 B2 JP S6342406B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- polycrystalline silicon
- resistor
- heat treatment
- semiconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 238000000137 annealing Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 tungsten halogen Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030113A JPS57143803A (en) | 1981-03-03 | 1981-03-03 | Method of forming resisotr |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030113A JPS57143803A (en) | 1981-03-03 | 1981-03-03 | Method of forming resisotr |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143803A JPS57143803A (en) | 1982-09-06 |
| JPS6342406B2 true JPS6342406B2 (enrdf_load_stackoverflow) | 1988-08-23 |
Family
ID=12294718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56030113A Granted JPS57143803A (en) | 1981-03-03 | 1981-03-03 | Method of forming resisotr |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143803A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242238U (enrdf_load_stackoverflow) * | 1985-08-31 | 1987-03-13 | ||
| JPH05251377A (ja) * | 1992-10-05 | 1993-09-28 | Seiko Epson Corp | 半導体装置の製造方法 |
-
1981
- 1981-03-03 JP JP56030113A patent/JPS57143803A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| JAPANESE JOURNAL OF APPLIED PHYSICS=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57143803A (en) | 1982-09-06 |
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