JPH0426219B2 - - Google Patents

Info

Publication number
JPH0426219B2
JPH0426219B2 JP58116160A JP11616083A JPH0426219B2 JP H0426219 B2 JPH0426219 B2 JP H0426219B2 JP 58116160 A JP58116160 A JP 58116160A JP 11616083 A JP11616083 A JP 11616083A JP H0426219 B2 JPH0426219 B2 JP H0426219B2
Authority
JP
Japan
Prior art keywords
resistor
resistance value
impurity
film
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58116160A
Other languages
English (en)
Japanese (ja)
Other versions
JPS609153A (ja
Inventor
Katsuro Mizukoshi
Mikio Ppongo
Takeoki Myauchi
Takao Kawanabe
Morio Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58116160A priority Critical patent/JPS609153A/ja
Publication of JPS609153A publication Critical patent/JPS609153A/ja
Publication of JPH0426219B2 publication Critical patent/JPH0426219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/47Resistors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP58116160A 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法 Granted JPS609153A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58116160A JPS609153A (ja) 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58116160A JPS609153A (ja) 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法

Publications (2)

Publication Number Publication Date
JPS609153A JPS609153A (ja) 1985-01-18
JPH0426219B2 true JPH0426219B2 (enrdf_load_stackoverflow) 1992-05-06

Family

ID=14680258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58116160A Granted JPS609153A (ja) 1983-06-29 1983-06-29 半導体集積回路内抵抗体の抵抗値調整方法

Country Status (1)

Country Link
JP (1) JPS609153A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085550A (ja) * 1983-10-17 1985-05-15 Hitachi Ltd 半導体集積回路の抵抗値調整方法
JP2685498B2 (ja) * 1988-05-25 1997-12-03 株式会社日立製作所 半導体装置
JP2008159608A (ja) 2006-12-20 2008-07-10 Fujitsu Ltd 半導体装置、半導体装置の製造方法および半導体装置の設計装置
JP7244180B2 (ja) * 2019-03-26 2023-03-22 ラピスセミコンダクタ株式会社 電圧クランプ回路及び集積回路。

Also Published As

Publication number Publication date
JPS609153A (ja) 1985-01-18

Similar Documents

Publication Publication Date Title
US4404735A (en) Method for manufacturing a field isolation structure for a semiconductor device
KR900000561B1 (ko) 반도체 집적회로의 제법 및 그를 이용하여 제조된 장치
JP2973492B2 (ja) 半導体薄膜の結晶化方法
US4381201A (en) Method for production of semiconductor devices
US4399345A (en) Laser trimming of circuit elements on semiconductive substrates
JPS6281709A (ja) 半導体装置の製造方法
JPS59195871A (ja) Mos電界効果トランジスタの製造方法
US20050189340A1 (en) Silicon layer for uniformizing temperature during photo-annealing
US4549064A (en) Laser treatment of silicon nitride
US4351674A (en) Method of producing a semiconductor device
JPH0426219B2 (enrdf_load_stackoverflow)
JPS5891621A (ja) 半導体装置の製造方法
US4719183A (en) Forming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having steps
US3427516A (en) Light emitting junction device using silicon as a dopant
JP2870933B2 (ja) 半導体装置の製造方法
JP2524049B2 (ja) 半導体集積回路およびその製造方法
US9958709B2 (en) Dynamic optical valve for mitigating non-uniform heating in laser processing
JP7025817B2 (ja) バイポーラトランジスタの製造方法
JPH0512862B2 (enrdf_load_stackoverflow)
JPS5833822A (ja) 半導体基体の製作方法
JPS5928328A (ja) 半導体装置の製造方法
JPH0318335B2 (enrdf_load_stackoverflow)
JP2631121B2 (ja) 半導体薄膜のレーザー溶融再結晶化方法
JPS6342406B2 (enrdf_load_stackoverflow)
JPH0851211A (ja) 薄膜トランジスタの製造方法