JPH0512862B2 - - Google Patents

Info

Publication number
JPH0512862B2
JPH0512862B2 JP58192403A JP19240383A JPH0512862B2 JP H0512862 B2 JPH0512862 B2 JP H0512862B2 JP 58192403 A JP58192403 A JP 58192403A JP 19240383 A JP19240383 A JP 19240383A JP H0512862 B2 JPH0512862 B2 JP H0512862B2
Authority
JP
Japan
Prior art keywords
resistor
resistance value
layer
poly
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58192403A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6085550A (ja
Inventor
Mikio Hongo
Katsuro Mizukoshi
Takeoki Myauchi
Takao Kawanabe
Morio Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19240383A priority Critical patent/JPS6085550A/ja
Publication of JPS6085550A publication Critical patent/JPS6085550A/ja
Publication of JPH0512862B2 publication Critical patent/JPH0512862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP19240383A 1983-10-17 1983-10-17 半導体集積回路の抵抗値調整方法 Granted JPS6085550A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19240383A JPS6085550A (ja) 1983-10-17 1983-10-17 半導体集積回路の抵抗値調整方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19240383A JPS6085550A (ja) 1983-10-17 1983-10-17 半導体集積回路の抵抗値調整方法

Publications (2)

Publication Number Publication Date
JPS6085550A JPS6085550A (ja) 1985-05-15
JPH0512862B2 true JPH0512862B2 (enrdf_load_stackoverflow) 1993-02-19

Family

ID=16290732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19240383A Granted JPS6085550A (ja) 1983-10-17 1983-10-17 半導体集積回路の抵抗値調整方法

Country Status (1)

Country Link
JP (1) JPS6085550A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609153A (ja) * 1983-06-29 1985-01-18 Hitachi Ltd 半導体集積回路内抵抗体の抵抗値調整方法

Also Published As

Publication number Publication date
JPS6085550A (ja) 1985-05-15

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