JPS6250971B2 - - Google Patents

Info

Publication number
JPS6250971B2
JPS6250971B2 JP3299280A JP3299280A JPS6250971B2 JP S6250971 B2 JPS6250971 B2 JP S6250971B2 JP 3299280 A JP3299280 A JP 3299280A JP 3299280 A JP3299280 A JP 3299280A JP S6250971 B2 JPS6250971 B2 JP S6250971B2
Authority
JP
Japan
Prior art keywords
film
semiconductor substrate
semiconductor
diffusion
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3299280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56129321A (en
Inventor
Kyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3299280A priority Critical patent/JPS56129321A/ja
Publication of JPS56129321A publication Critical patent/JPS56129321A/ja
Publication of JPS6250971B2 publication Critical patent/JPS6250971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
JP3299280A 1980-03-14 1980-03-14 Manufacture of semiconductor device Granted JPS56129321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3299280A JPS56129321A (en) 1980-03-14 1980-03-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3299280A JPS56129321A (en) 1980-03-14 1980-03-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56129321A JPS56129321A (en) 1981-10-09
JPS6250971B2 true JPS6250971B2 (enrdf_load_stackoverflow) 1987-10-28

Family

ID=12374346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3299280A Granted JPS56129321A (en) 1980-03-14 1980-03-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56129321A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922323A (ja) * 1982-07-28 1984-02-04 Fujitsu Ltd 半導体装置の製造方法
JPS60257124A (ja) * 1984-06-01 1985-12-18 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61113768A (ja) * 1984-11-07 1986-05-31 Mitsubishi Electric Corp 金属薄膜のアニ−ル方法
US4661177A (en) * 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
JP3579316B2 (ja) 1999-10-19 2004-10-20 三洋電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS56129321A (en) 1981-10-09

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