JPS6074640A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6074640A
JPS6074640A JP58182757A JP18275783A JPS6074640A JP S6074640 A JPS6074640 A JP S6074640A JP 58182757 A JP58182757 A JP 58182757A JP 18275783 A JP18275783 A JP 18275783A JP S6074640 A JPS6074640 A JP S6074640A
Authority
JP
Japan
Prior art keywords
oxide film
film
layer
region
field oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58182757A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059942B2 (OSRAM
Inventor
Hiroshi Iwasaki
博 岩崎
Minoru Taguchi
実 田口
Hiroshi Nakayama
弘 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58182757A priority Critical patent/JPS6074640A/ja
Publication of JPS6074640A publication Critical patent/JPS6074640A/ja
Publication of JPH059942B2 publication Critical patent/JPH059942B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP58182757A 1983-09-30 1983-09-30 半導体装置の製造方法 Granted JPS6074640A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182757A JPS6074640A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182757A JPS6074640A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6074640A true JPS6074640A (ja) 1985-04-26
JPH059942B2 JPH059942B2 (OSRAM) 1993-02-08

Family

ID=16123898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182757A Granted JPS6074640A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6074640A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610581B1 (en) 1999-06-01 2003-08-26 Sanyo Electric Co., Ltd. Method of forming isolation film in semiconductor device
JP2005259775A (ja) * 2004-03-09 2005-09-22 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345974A (en) * 1976-10-07 1978-04-25 Nec Corp Manufacture of semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345974A (en) * 1976-10-07 1978-04-25 Nec Corp Manufacture of semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610581B1 (en) 1999-06-01 2003-08-26 Sanyo Electric Co., Ltd. Method of forming isolation film in semiconductor device
JP2005259775A (ja) * 2004-03-09 2005-09-22 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPH059942B2 (OSRAM) 1993-02-08

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