JPS6070597A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS6070597A
JPS6070597A JP58179580A JP17958083A JPS6070597A JP S6070597 A JPS6070597 A JP S6070597A JP 58179580 A JP58179580 A JP 58179580A JP 17958083 A JP17958083 A JP 17958083A JP S6070597 A JPS6070597 A JP S6070597A
Authority
JP
Japan
Prior art keywords
voltage
memory cell
mos
current
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58179580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519239B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋　弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58179580A priority Critical patent/JPS6070597A/ja
Publication of JPS6070597A publication Critical patent/JPS6070597A/ja
Publication of JPH0519239B2 publication Critical patent/JPH0519239B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
JP58179580A 1983-09-28 1983-09-28 不揮発性半導体記憶装置 Granted JPS6070597A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58179580A JPS6070597A (ja) 1983-09-28 1983-09-28 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58179580A JPS6070597A (ja) 1983-09-28 1983-09-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6070597A true JPS6070597A (ja) 1985-04-22
JPH0519239B2 JPH0519239B2 (enrdf_load_stackoverflow) 1993-03-16

Family

ID=16068208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58179580A Granted JPS6070597A (ja) 1983-09-28 1983-09-28 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6070597A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61258394A (ja) * 1985-05-10 1986-11-15 Seiko Instr & Electronics Ltd 半導体集積回路装置
US6175521B1 (en) 1996-04-05 2001-01-16 Sgs-Thomson Microelectronics S.R.L. Voltage regulator for programming electrically programmable non-volatile memory cells in a cell matrix
JP2006286052A (ja) * 2005-03-31 2006-10-19 Nec Electronics Corp 不揮発性半導体記憶装置
JP2010044824A (ja) * 2008-08-12 2010-02-25 Seiko Instruments Inc 半導体不揮発性記憶装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893995A (enrdf_load_stackoverflow) * 1972-03-14 1973-12-04
JPS51157834U (enrdf_load_stackoverflow) * 1975-06-10 1976-12-15
JPS5573991A (en) * 1978-11-27 1980-06-04 Nec Corp Integrated circuit
JPS55132590A (en) * 1979-04-04 1980-10-15 Nec Corp Semiconductor device
JPS55142489A (en) * 1979-04-25 1980-11-07 Fujitsu Ltd Write-in circuit for semiconductor memory unit
JPS55163689A (en) * 1979-06-07 1980-12-19 Nec Corp Integrated circuit
JPS56153416A (en) * 1980-04-30 1981-11-27 Nec Corp High accuracy constant current power source
JPS5729917U (enrdf_load_stackoverflow) * 1980-07-29 1982-02-17
JPS57176595A (en) * 1981-04-24 1982-10-29 Hitachi Ltd E-prom write-in circuit

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893995A (enrdf_load_stackoverflow) * 1972-03-14 1973-12-04
JPS51157834U (enrdf_load_stackoverflow) * 1975-06-10 1976-12-15
JPS5573991A (en) * 1978-11-27 1980-06-04 Nec Corp Integrated circuit
JPS55132590A (en) * 1979-04-04 1980-10-15 Nec Corp Semiconductor device
JPS55142489A (en) * 1979-04-25 1980-11-07 Fujitsu Ltd Write-in circuit for semiconductor memory unit
JPS55163689A (en) * 1979-06-07 1980-12-19 Nec Corp Integrated circuit
JPS56153416A (en) * 1980-04-30 1981-11-27 Nec Corp High accuracy constant current power source
JPS5729917U (enrdf_load_stackoverflow) * 1980-07-29 1982-02-17
JPS57176595A (en) * 1981-04-24 1982-10-29 Hitachi Ltd E-prom write-in circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61258394A (ja) * 1985-05-10 1986-11-15 Seiko Instr & Electronics Ltd 半導体集積回路装置
US6175521B1 (en) 1996-04-05 2001-01-16 Sgs-Thomson Microelectronics S.R.L. Voltage regulator for programming electrically programmable non-volatile memory cells in a cell matrix
JP2006286052A (ja) * 2005-03-31 2006-10-19 Nec Electronics Corp 不揮発性半導体記憶装置
JP2010044824A (ja) * 2008-08-12 2010-02-25 Seiko Instruments Inc 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
JPH0519239B2 (enrdf_load_stackoverflow) 1993-03-16

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