JPS6063967A - 絶縁ゲ−ト形電界効果トランジスタの製造方法 - Google Patents

絶縁ゲ−ト形電界効果トランジスタの製造方法

Info

Publication number
JPS6063967A
JPS6063967A JP59164602A JP16460284A JPS6063967A JP S6063967 A JPS6063967 A JP S6063967A JP 59164602 A JP59164602 A JP 59164602A JP 16460284 A JP16460284 A JP 16460284A JP S6063967 A JPS6063967 A JP S6063967A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
layer
oxide film
oxidation
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59164602A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0434820B2 (enrdf_load_stackoverflow
Inventor
Shinichi Inoue
井上　信市
Nobuo Toyokura
豊蔵　信夫
Hajime Ishikawa
元 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59164602A priority Critical patent/JPS6063967A/ja
Publication of JPS6063967A publication Critical patent/JPS6063967A/ja
Publication of JPH0434820B2 publication Critical patent/JPH0434820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59164602A 1984-08-06 1984-08-06 絶縁ゲ−ト形電界効果トランジスタの製造方法 Granted JPS6063967A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59164602A JPS6063967A (ja) 1984-08-06 1984-08-06 絶縁ゲ−ト形電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59164602A JPS6063967A (ja) 1984-08-06 1984-08-06 絶縁ゲ−ト形電界効果トランジスタの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55155376A Division JPS6044823B2 (ja) 1980-11-05 1980-11-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6063967A true JPS6063967A (ja) 1985-04-12
JPH0434820B2 JPH0434820B2 (enrdf_load_stackoverflow) 1992-06-09

Family

ID=15796294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59164602A Granted JPS6063967A (ja) 1984-08-06 1984-08-06 絶縁ゲ−ト形電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6063967A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142319A (ja) * 1985-09-27 1987-06-25 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体装置のド−プ領域／接点構造とその製法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567166A (en) * 1978-11-15 1980-05-21 Fujitsu Ltd Preparation of mos type semiconductor device
JPS55121667A (en) * 1979-03-13 1980-09-18 Seiko Epson Corp Integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567166A (en) * 1978-11-15 1980-05-21 Fujitsu Ltd Preparation of mos type semiconductor device
JPS55121667A (en) * 1979-03-13 1980-09-18 Seiko Epson Corp Integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142319A (ja) * 1985-09-27 1987-06-25 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体装置のド−プ領域／接点構造とその製法

Also Published As

Publication number Publication date
JPH0434820B2 (enrdf_load_stackoverflow) 1992-06-09

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