JPS6058659A - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法

Info

Publication number
JPS6058659A
JPS6058659A JP58165889A JP16588983A JPS6058659A JP S6058659 A JPS6058659 A JP S6058659A JP 58165889 A JP58165889 A JP 58165889A JP 16588983 A JP16588983 A JP 16588983A JP S6058659 A JPS6058659 A JP S6058659A
Authority
JP
Japan
Prior art keywords
film
melting point
point metal
high melting
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58165889A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351111B2 (https=
Inventor
Takashi Kato
隆 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58165889A priority Critical patent/JPS6058659A/ja
Publication of JPS6058659A publication Critical patent/JPS6058659A/ja
Publication of JPH0351111B2 publication Critical patent/JPH0351111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58165889A 1983-09-10 1983-09-10 半導体記憶装置の製造方法 Granted JPS6058659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165889A JPS6058659A (ja) 1983-09-10 1983-09-10 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165889A JPS6058659A (ja) 1983-09-10 1983-09-10 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6058659A true JPS6058659A (ja) 1985-04-04
JPH0351111B2 JPH0351111B2 (https=) 1991-08-05

Family

ID=15820895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165889A Granted JPS6058659A (ja) 1983-09-10 1983-09-10 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6058659A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209653A (ja) * 1987-02-27 1988-08-31 ノバ　テクノロジ−ズ　インコ−ポレイテツド リクライニング可能な車椅子装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209653A (ja) * 1987-02-27 1988-08-31 ノバ　テクノロジ−ズ　インコ−ポレイテツド リクライニング可能な車椅子装置

Also Published As

Publication number Publication date
JPH0351111B2 (https=) 1991-08-05

Similar Documents

Publication Publication Date Title
US5837593A (en) Methods of fabricating microelectronic capacitors having tantalum pentoxide dielectrics
JP4825247B2 (ja) 半導体集積回路構造を形成する方法
JP3263429B2 (ja) 半導体装置及びその製造方法
US4432035A (en) Method of making high dielectric constant insulators and capacitors using same
US20020102810A1 (en) Method for fabricating a semiconductor device
JP3063606B2 (ja) 半導体装置の製造方法
JPS60153158A (ja) キャパシタ誘電体膜の製造方法
JPH04279053A (ja) 高値タンタル酸化物コンデンサ
JPH03157965A (ja) 半導体装置
KR20010021015A (ko) 반도체 장치 및 집적회로 장치의 제조 방법
US5970309A (en) Method of manufacturing a capacitor and a capacitor electrode in semiconductor device
JPH04335572A (ja) 半導体装置の製造方法
JPH06151751A (ja) 半導体集積回路装置及びその製造方法
JPS6058659A (ja) 半導体記憶装置の製造方法
US6037256A (en) Method for producing a noble metal-containing structure on a substrate, and semiconductor component having such a noble metal-containing structure
JPS5810852A (ja) 半導体装置
JP3106620B2 (ja) 誘電体薄膜の製造方法及び容量素子の製造方法
JP3303788B2 (ja) 半導体集積回路の電極構造の製造方法
JPH01154547A (ja) 容量の製造方法
JP3014014B2 (ja) 半導体装置およびその製造方法
KR19980037961A (ko) 반도체 소자의 커패시터 제조방법
JPH11274417A (ja) 少なくとも１つのコンデンサを有する回路装置、および少なくとも１つのコンデンサを有する回路装置の形成方法
JPH0367346B2 (https=)
JPS58112360A (ja) 半導体装置用キヤパシタおよびその製造方法
KR100331261B1 (ko) 반도체장치의 제조 방법