JPS6046024A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6046024A JPS6046024A JP15430783A JP15430783A JPS6046024A JP S6046024 A JPS6046024 A JP S6046024A JP 15430783 A JP15430783 A JP 15430783A JP 15430783 A JP15430783 A JP 15430783A JP S6046024 A JPS6046024 A JP S6046024A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- conductive layer
- forming
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 43
- 238000001020 plasma etching Methods 0.000 abstract description 5
- 238000000992 sputter etching Methods 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000000605 extraction Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000005275 alloying Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 210000004013 groin Anatomy 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430783A JPS6046024A (ja) | 1983-08-24 | 1983-08-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430783A JPS6046024A (ja) | 1983-08-24 | 1983-08-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6046024A true JPS6046024A (ja) | 1985-03-12 |
| JPH0562456B2 JPH0562456B2 (enrdf_load_stackoverflow) | 1993-09-08 |
Family
ID=15581254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15430783A Granted JPS6046024A (ja) | 1983-08-24 | 1983-08-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046024A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61222224A (ja) * | 1985-03-28 | 1986-10-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6235539A (ja) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62235730A (ja) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS6315418A (ja) * | 1986-07-08 | 1988-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6482620A (en) * | 1987-09-25 | 1989-03-28 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0290610A (ja) * | 1988-09-28 | 1990-03-30 | Nec Corp | 半導体集積回路の製造方法 |
| US6071810A (en) * | 1996-12-24 | 2000-06-06 | Kabushiki Kaisha Toshiba | Method of filling contact holes and wiring grooves of a semiconductor device |
| JP2006216909A (ja) * | 2005-02-07 | 2006-08-17 | Denso Corp | 半導体装置および半導体装置の製造方法 |
| US7399677B2 (en) | 2003-03-31 | 2008-07-15 | Rohm Co., Ltd. | Method for manufacturing semiconductor with low resistance region |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998578A (enrdf_load_stackoverflow) * | 1973-01-22 | 1974-09-18 | ||
| JPS5280966A (en) * | 1975-12-20 | 1977-07-07 | Taiu Ri | Method of forming decoration edge of blanket |
| JPS5380966A (en) * | 1976-12-27 | 1978-07-17 | Hitachi Ltd | Manufacture of electrode fdr semiconductor device |
-
1983
- 1983-08-24 JP JP15430783A patent/JPS6046024A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998578A (enrdf_load_stackoverflow) * | 1973-01-22 | 1974-09-18 | ||
| JPS5280966A (en) * | 1975-12-20 | 1977-07-07 | Taiu Ri | Method of forming decoration edge of blanket |
| JPS5380966A (en) * | 1976-12-27 | 1978-07-17 | Hitachi Ltd | Manufacture of electrode fdr semiconductor device |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61222224A (ja) * | 1985-03-28 | 1986-10-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6235539A (ja) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62235730A (ja) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS6315418A (ja) * | 1986-07-08 | 1988-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6482620A (en) * | 1987-09-25 | 1989-03-28 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0290610A (ja) * | 1988-09-28 | 1990-03-30 | Nec Corp | 半導体集積回路の製造方法 |
| US6071810A (en) * | 1996-12-24 | 2000-06-06 | Kabushiki Kaisha Toshiba | Method of filling contact holes and wiring grooves of a semiconductor device |
| US6440843B1 (en) | 1996-12-24 | 2002-08-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| US6673704B2 (en) | 1996-12-24 | 2004-01-06 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| US6946387B2 (en) | 1996-12-24 | 2005-09-20 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| US7399677B2 (en) | 2003-03-31 | 2008-07-15 | Rohm Co., Ltd. | Method for manufacturing semiconductor with low resistance region |
| JP2006216909A (ja) * | 2005-02-07 | 2006-08-17 | Denso Corp | 半導体装置および半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0562456B2 (enrdf_load_stackoverflow) | 1993-09-08 |
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