JPS6046024A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6046024A
JPS6046024A JP15430783A JP15430783A JPS6046024A JP S6046024 A JPS6046024 A JP S6046024A JP 15430783 A JP15430783 A JP 15430783A JP 15430783 A JP15430783 A JP 15430783A JP S6046024 A JPS6046024 A JP S6046024A
Authority
JP
Japan
Prior art keywords
layer
film
conductive layer
forming
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15430783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562456B2 (cs
Inventor
Katsuya Okumura
勝弥 奥村
Masaaki Ueda
植田　正昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15430783A priority Critical patent/JPS6046024A/ja
Publication of JPS6046024A publication Critical patent/JPS6046024A/ja
Publication of JPH0562456B2 publication Critical patent/JPH0562456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15430783A 1983-08-24 1983-08-24 半導体装置の製造方法 Granted JPS6046024A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15430783A JPS6046024A (ja) 1983-08-24 1983-08-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15430783A JPS6046024A (ja) 1983-08-24 1983-08-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6046024A true JPS6046024A (ja) 1985-03-12
JPH0562456B2 JPH0562456B2 (cs) 1993-09-08

Family

ID=15581254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15430783A Granted JPS6046024A (ja) 1983-08-24 1983-08-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6046024A (cs)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222224A (ja) * 1985-03-28 1986-10-02 Fujitsu Ltd 半導体装置の製造方法
JPS6235539A (ja) * 1985-08-08 1987-02-16 Fujitsu Ltd 半導体装置の製造方法
JPS62235730A (ja) * 1986-04-07 1987-10-15 Matsushita Electronics Corp 半導体装置の製造方法
JPS6315418A (ja) * 1986-07-08 1988-01-22 Fujitsu Ltd 半導体装置の製造方法
JPS6482620A (en) * 1987-09-25 1989-03-28 Toshiba Corp Manufacture of semiconductor device
JPH0290610A (ja) * 1988-09-28 1990-03-30 Nec Corp 半導体集積回路の製造方法
US6071810A (en) * 1996-12-24 2000-06-06 Kabushiki Kaisha Toshiba Method of filling contact holes and wiring grooves of a semiconductor device
JP2006216909A (ja) * 2005-02-07 2006-08-17 Denso Corp 半導体装置および半導体装置の製造方法
US7399677B2 (en) 2003-03-31 2008-07-15 Rohm Co., Ltd. Method for manufacturing semiconductor with low resistance region

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998578A (cs) * 1973-01-22 1974-09-18
JPS5280966A (en) * 1975-12-20 1977-07-07 Taiu Ri Method of forming decoration edge of blanket
JPS5380966A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of electrode fdr semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998578A (cs) * 1973-01-22 1974-09-18
JPS5280966A (en) * 1975-12-20 1977-07-07 Taiu Ri Method of forming decoration edge of blanket
JPS5380966A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of electrode fdr semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222224A (ja) * 1985-03-28 1986-10-02 Fujitsu Ltd 半導体装置の製造方法
JPS6235539A (ja) * 1985-08-08 1987-02-16 Fujitsu Ltd 半導体装置の製造方法
JPS62235730A (ja) * 1986-04-07 1987-10-15 Matsushita Electronics Corp 半導体装置の製造方法
JPS6315418A (ja) * 1986-07-08 1988-01-22 Fujitsu Ltd 半導体装置の製造方法
JPS6482620A (en) * 1987-09-25 1989-03-28 Toshiba Corp Manufacture of semiconductor device
JPH0290610A (ja) * 1988-09-28 1990-03-30 Nec Corp 半導体集積回路の製造方法
US6071810A (en) * 1996-12-24 2000-06-06 Kabushiki Kaisha Toshiba Method of filling contact holes and wiring grooves of a semiconductor device
US6440843B1 (en) 1996-12-24 2002-08-27 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6673704B2 (en) 1996-12-24 2004-01-06 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6946387B2 (en) 1996-12-24 2005-09-20 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US7399677B2 (en) 2003-03-31 2008-07-15 Rohm Co., Ltd. Method for manufacturing semiconductor with low resistance region
JP2006216909A (ja) * 2005-02-07 2006-08-17 Denso Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0562456B2 (cs) 1993-09-08

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