JPS604239A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JPS604239A JPS604239A JP11202783A JP11202783A JPS604239A JP S604239 A JPS604239 A JP S604239A JP 11202783 A JP11202783 A JP 11202783A JP 11202783 A JP11202783 A JP 11202783A JP S604239 A JPS604239 A JP S604239A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- layer
- plasma cvd
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims abstract description 29
- 239000011229 interlayer Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract 17
- 239000010409 thin film Substances 0.000 claims abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 abstract description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 2
- 238000004528 spin coating Methods 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11202783A JPS604239A (ja) | 1983-06-22 | 1983-06-22 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11202783A JPS604239A (ja) | 1983-06-22 | 1983-06-22 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS604239A true JPS604239A (ja) | 1985-01-10 |
| JPH0324784B2 JPH0324784B2 (OSRAM) | 1991-04-04 |
Family
ID=14576160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11202783A Granted JPS604239A (ja) | 1983-06-22 | 1983-06-22 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS604239A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258043A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633899A (en) * | 1979-08-29 | 1981-04-04 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of forming multilayer wire |
| JPS5886746A (ja) * | 1981-11-19 | 1983-05-24 | Nec Corp | 半導体装置 |
-
1983
- 1983-06-22 JP JP11202783A patent/JPS604239A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633899A (en) * | 1979-08-29 | 1981-04-04 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of forming multilayer wire |
| JPS5886746A (ja) * | 1981-11-19 | 1983-05-24 | Nec Corp | 半導体装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258043A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0324784B2 (OSRAM) | 1991-04-04 |
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