JPS6029627A - 半導体圧力センサ - Google Patents

半導体圧力センサ

Info

Publication number
JPS6029627A
JPS6029627A JP58136955A JP13695583A JPS6029627A JP S6029627 A JPS6029627 A JP S6029627A JP 58136955 A JP58136955 A JP 58136955A JP 13695583 A JP13695583 A JP 13695583A JP S6029627 A JPS6029627 A JP S6029627A
Authority
JP
Japan
Prior art keywords
diaphragm
pressure sensor
semiconductor pressure
damage
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58136955A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426051B2 (en, 2012
Inventor
Satoru Ohata
覚 大畠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58136955A priority Critical patent/JPS6029627A/ja
Publication of JPS6029627A publication Critical patent/JPS6029627A/ja
Publication of JPH0426051B2 publication Critical patent/JPH0426051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
JP58136955A 1983-07-27 1983-07-27 半導体圧力センサ Granted JPS6029627A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58136955A JPS6029627A (ja) 1983-07-27 1983-07-27 半導体圧力センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58136955A JPS6029627A (ja) 1983-07-27 1983-07-27 半導体圧力センサ

Publications (2)

Publication Number Publication Date
JPS6029627A true JPS6029627A (ja) 1985-02-15
JPH0426051B2 JPH0426051B2 (en, 2012) 1992-05-06

Family

ID=15187408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58136955A Granted JPS6029627A (ja) 1983-07-27 1983-07-27 半導体圧力センサ

Country Status (1)

Country Link
JP (1) JPS6029627A (en, 2012)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05118936A (ja) * 1991-10-25 1993-05-14 Yamatake Honeywell Co Ltd 薄膜ダイアフラム
WO2011010571A1 (ja) 2009-07-24 2011-01-27 ローム株式会社 半導体圧力センサ、圧力センサ装置、電子機器、および半導体圧力センサの製造方法
JP2015108581A (ja) * 2013-12-05 2015-06-11 株式会社デンソー 圧力センサ
CN114295276A (zh) * 2020-10-08 2022-04-08 阿自倍尔株式会社 压力测定装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114690A (en) * 1977-03-17 1978-10-06 Yokogawa Hokushin Electric Corp Thin film strain gauge convertor
JPS57197872A (en) * 1981-05-29 1982-12-04 Toshiba Corp Semiconductor pressure detecting element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114690A (en) * 1977-03-17 1978-10-06 Yokogawa Hokushin Electric Corp Thin film strain gauge convertor
JPS57197872A (en) * 1981-05-29 1982-12-04 Toshiba Corp Semiconductor pressure detecting element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05118936A (ja) * 1991-10-25 1993-05-14 Yamatake Honeywell Co Ltd 薄膜ダイアフラム
WO2011010571A1 (ja) 2009-07-24 2011-01-27 ローム株式会社 半導体圧力センサ、圧力センサ装置、電子機器、および半導体圧力センサの製造方法
US8770035B2 (en) 2009-07-24 2014-07-08 Rohm Co., Ltd. Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor
US9568385B2 (en) 2009-07-24 2017-02-14 Rohm Co., Ltd. Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor
JP2015108581A (ja) * 2013-12-05 2015-06-11 株式会社デンソー 圧力センサ
CN114295276A (zh) * 2020-10-08 2022-04-08 阿自倍尔株式会社 压力测定装置
CN114295276B (zh) * 2020-10-08 2025-01-24 阿自倍尔株式会社 压力测定装置

Also Published As

Publication number Publication date
JPH0426051B2 (en, 2012) 1992-05-06

Similar Documents

Publication Publication Date Title
US3456226A (en) Strain gage configuration
JP4438193B2 (ja) 圧力センサ
US5291788A (en) Semiconductor pressure sensor
JP2804874B2 (ja) 半導体加速度検出装置
US5412993A (en) Pressure detection gage for semiconductor pressure sensor
KR920007827B1 (ko) 모노리식 압력검지 ic 및 그 제조공정
JP4045979B2 (ja) 圧力検出装置
JPS6029627A (ja) 半導体圧力センサ
JP4379993B2 (ja) 圧力センサ
JP2895262B2 (ja) 複合センサ
JPH0577304B2 (en, 2012)
US5708207A (en) Semiconductor acceleration sensor
JPH0337503A (ja) 歪ゲージ
JPH01236659A (ja) 半導体圧力センサ
US6938501B2 (en) Semiconductor dynamic quantity sensor
JPS61177783A (ja) 半導体圧力センサ
JPH02205077A (ja) 力覚センサ
JPH09181191A (ja) 差動対トランジスタを有する回路装置
JPH02116174A (ja) 半導体圧力センサ
JP4019876B2 (ja) 力検知素子
JPH0564747B2 (en, 2012)
JP3509336B2 (ja) 集積化センサ
JP3120388B2 (ja) 半導体圧力変換器
JPH0337537A (ja) 圧力センサ
JP2980440B2 (ja) 半導体圧力センサおよびその製造方法