JPS60253267A - ヘテロ接合バイポ−ラトランジスタおよびその製造方法 - Google Patents

ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Info

Publication number
JPS60253267A
JPS60253267A JP59108794A JP10879484A JPS60253267A JP S60253267 A JPS60253267 A JP S60253267A JP 59108794 A JP59108794 A JP 59108794A JP 10879484 A JP10879484 A JP 10879484A JP S60253267 A JPS60253267 A JP S60253267A
Authority
JP
Japan
Prior art keywords
insulating film
emitter
collector
layer
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59108794A
Other languages
English (en)
Japanese (ja)
Inventor
Masao Obara
小原　正生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59108794A priority Critical patent/JPS60253267A/ja
Priority to DE19853512841 priority patent/DE3512841A1/de
Publication of JPS60253267A publication Critical patent/JPS60253267A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP59108794A 1984-05-29 1984-05-29 ヘテロ接合バイポ−ラトランジスタおよびその製造方法 Pending JPS60253267A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59108794A JPS60253267A (ja) 1984-05-29 1984-05-29 ヘテロ接合バイポ−ラトランジスタおよびその製造方法
DE19853512841 DE3512841A1 (de) 1984-05-29 1985-04-10 Heterouebergang-bipolartransistor mit planarstruktur und verfahren zu seiner herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59108794A JPS60253267A (ja) 1984-05-29 1984-05-29 ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Publications (1)

Publication Number Publication Date
JPS60253267A true JPS60253267A (ja) 1985-12-13

Family

ID=14493646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59108794A Pending JPS60253267A (ja) 1984-05-29 1984-05-29 ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Country Status (2)

Country Link
JP (1) JPS60253267A (enExample)
DE (1) DE3512841A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159774A (ja) * 1984-08-30 1986-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS6276555A (ja) * 1985-06-28 1987-04-08 テキサス　インスツルメンツ　インコ−ポレイテツド プレ−ナ型ヘテロ接合バイポ−ラデバイスおよびその製作方法
JPS62159464A (ja) * 1986-01-07 1987-07-15 Fujitsu Ltd 化合物半導体装置の製造方法
JPS6442859A (en) * 1987-08-11 1989-02-15 Sony Corp Bipolar transistor and manufacture thereof
JPH0210734A (ja) * 1988-06-29 1990-01-16 Sony Corp 半導体装置およびその製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590842B2 (ja) * 1986-10-29 1997-03-12 ソニー株式会社 ヘテロ接合型バイポーラトランジスタ
DE3715232A1 (de) * 1987-05-07 1988-11-17 Siemens Ag Verfahren zur substratkontaktierung bei der herstellung von durch isolationsgraeben getrennten bipolartransistorschaltungen
JP2585662B2 (ja) * 1987-12-23 1997-02-26 株式会社日立製作所 ヘテロ接合バイポーラトランジスタの製造方法
DE58909577D1 (de) * 1989-09-08 1996-02-29 Siemens Ag Verfahren zur Herstellung eines Heterobipolartransistors mit Separation des Kollektoranschlusses
EP0460285B1 (de) * 1990-06-07 1996-08-28 Siemens Aktiengesellschaft Verfahren zur Herstellung von Bipolartransistoren mit extrem reduzierter Basis-Kollektor-Kapazität

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185677A (enExample) * 1975-01-27 1976-07-27 Hitachi Ltd
JPS5658258A (en) * 1979-10-16 1981-05-21 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS57197862A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Active semiconductor device and manufacture thereof
JPS59208873A (ja) * 1983-05-13 1984-11-27 Agency Of Ind Science & Technol 半導体装置
JPS60177671A (ja) * 1984-02-24 1985-09-11 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1534896A (en) * 1975-05-19 1978-12-06 Itt Direct metal contact to buried layer
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185677A (enExample) * 1975-01-27 1976-07-27 Hitachi Ltd
JPS5658258A (en) * 1979-10-16 1981-05-21 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS57197862A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Active semiconductor device and manufacture thereof
JPS59208873A (ja) * 1983-05-13 1984-11-27 Agency Of Ind Science & Technol 半導体装置
JPS60177671A (ja) * 1984-02-24 1985-09-11 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159774A (ja) * 1984-08-30 1986-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS6276555A (ja) * 1985-06-28 1987-04-08 テキサス　インスツルメンツ　インコ−ポレイテツド プレ−ナ型ヘテロ接合バイポ−ラデバイスおよびその製作方法
JPS62159464A (ja) * 1986-01-07 1987-07-15 Fujitsu Ltd 化合物半導体装置の製造方法
JPS6442859A (en) * 1987-08-11 1989-02-15 Sony Corp Bipolar transistor and manufacture thereof
JPH0210734A (ja) * 1988-06-29 1990-01-16 Sony Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE3512841C2 (enExample) 1989-12-28
DE3512841A1 (de) 1985-12-05

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