JPS60221757A - 露光用マスク - Google Patents
露光用マスクInfo
- Publication number
- JPS60221757A JPS60221757A JP60030354A JP3035485A JPS60221757A JP S60221757 A JPS60221757 A JP S60221757A JP 60030354 A JP60030354 A JP 60030354A JP 3035485 A JP3035485 A JP 3035485A JP S60221757 A JPS60221757 A JP S60221757A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- reticle
- patterns
- reduction projection
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60030354A JPS60221757A (ja) | 1985-02-20 | 1985-02-20 | 露光用マスク |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60030354A JPS60221757A (ja) | 1985-02-20 | 1985-02-20 | 露光用マスク |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3548779A Division JPS55129333A (en) | 1979-03-28 | 1979-03-28 | Scale-down projection aligner and mask used for this |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62226314A Division JPS6379318A (ja) | 1987-09-11 | 1987-09-11 | 縮小投影露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60221757A true JPS60221757A (ja) | 1985-11-06 |
JPS6155106B2 JPS6155106B2 (enrdf_load_stackoverflow) | 1986-11-26 |
Family
ID=12301513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60030354A Granted JPS60221757A (ja) | 1985-02-20 | 1985-02-20 | 露光用マスク |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60221757A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6362229A (ja) * | 1986-09-03 | 1988-03-18 | Canon Inc | 露光装置 |
WO1999009456A1 (en) * | 1997-08-19 | 1999-02-25 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US6368754B1 (en) | 1998-11-13 | 2002-04-09 | Nec Corporation | Reticle used for fabrication of semiconductor device |
CN102902155A (zh) * | 2011-07-29 | 2013-01-30 | 株式会社V技术 | 光掩模及曝光装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3704946A (en) * | 1969-02-20 | 1972-12-05 | Opt Omechanisms Inc | Microcircuit art generating means |
-
1985
- 1985-02-20 JP JP60030354A patent/JPS60221757A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3704946A (en) * | 1969-02-20 | 1972-12-05 | Opt Omechanisms Inc | Microcircuit art generating means |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6362229A (ja) * | 1986-09-03 | 1988-03-18 | Canon Inc | 露光装置 |
WO1999009456A1 (en) * | 1997-08-19 | 1999-02-25 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US5995200A (en) * | 1997-08-19 | 1999-11-30 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US6040892A (en) * | 1997-08-19 | 2000-03-21 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US6421111B1 (en) | 1997-08-19 | 2002-07-16 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US6563568B2 (en) | 1997-08-19 | 2003-05-13 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US6646722B2 (en) | 1997-08-19 | 2003-11-11 | Micron Technology, Inc. | Multiple image reticle for forming layers |
US6368754B1 (en) | 1998-11-13 | 2002-04-09 | Nec Corporation | Reticle used for fabrication of semiconductor device |
CN102902155A (zh) * | 2011-07-29 | 2013-01-30 | 株式会社V技术 | 光掩模及曝光装置 |
JP2013029749A (ja) * | 2011-07-29 | 2013-02-07 | V Technology Co Ltd | フォトマスク及び露光装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6155106B2 (enrdf_load_stackoverflow) | 1986-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH09134870A (ja) | パターン形成方法および形成装置 | |
JPS60221757A (ja) | 露光用マスク | |
US6893806B2 (en) | Multiple purpose reticle layout for selective printing of test circuits | |
JPH01293616A (ja) | 半導体集積回路の製造方法 | |
JP2004047687A (ja) | 露光方法 | |
JPH0787174B2 (ja) | パタ−ン形成方法 | |
JP2715462B2 (ja) | レチクル及びこれを用いる半導体装置の製造方法 | |
JPS60221758A (ja) | 縮小投影露光方法 | |
JPS62296422A (ja) | 露光方法 | |
JP2545431B2 (ja) | リソグラフィ―用レチクルおよびレチクルパタ―ン転写方法 | |
JPS63278230A (ja) | 半導体装置の製造方法 | |
JPH06224099A (ja) | 半導体装置の製造方法 | |
JPH04304453A (ja) | レチクル及び露光方法 | |
JPS6379318A (ja) | 縮小投影露光方法 | |
JPS5994418A (ja) | 半導体装置 | |
JP2005017314A (ja) | 露光マスクおよび半導体装置の製造方法 | |
JPS6233580B2 (enrdf_load_stackoverflow) | ||
JP2745561B2 (ja) | ゲートアレイlsiの製造方法 | |
JPH022556A (ja) | 半導体デバイス製造用ステッパーレティクル | |
JPS6341050B2 (enrdf_load_stackoverflow) | ||
JPS62188228A (ja) | 集積回路の製造方法 | |
JPS5877232A (ja) | 半導体装置 | |
US6410350B1 (en) | Detecting die speed variations | |
JPS62265723A (ja) | レジスト露光方法 | |
JPH03180017A (ja) | 半導体装置の製造方法 |