JPS60221757A - 露光用マスク - Google Patents

露光用マスク

Info

Publication number
JPS60221757A
JPS60221757A JP60030354A JP3035485A JPS60221757A JP S60221757 A JPS60221757 A JP S60221757A JP 60030354 A JP60030354 A JP 60030354A JP 3035485 A JP3035485 A JP 3035485A JP S60221757 A JPS60221757 A JP S60221757A
Authority
JP
Japan
Prior art keywords
mask
reticle
patterns
reduction projection
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60030354A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155106B2 (enrdf_load_stackoverflow
Inventor
Takao Kawanabe
川那部 隆夫
Soichi Tsuuzawa
通沢 壮一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60030354A priority Critical patent/JPS60221757A/ja
Publication of JPS60221757A publication Critical patent/JPS60221757A/ja
Publication of JPS6155106B2 publication Critical patent/JPS6155106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP60030354A 1985-02-20 1985-02-20 露光用マスク Granted JPS60221757A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60030354A JPS60221757A (ja) 1985-02-20 1985-02-20 露光用マスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60030354A JPS60221757A (ja) 1985-02-20 1985-02-20 露光用マスク

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3548779A Division JPS55129333A (en) 1979-03-28 1979-03-28 Scale-down projection aligner and mask used for this

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62226314A Division JPS6379318A (ja) 1987-09-11 1987-09-11 縮小投影露光方法

Publications (2)

Publication Number Publication Date
JPS60221757A true JPS60221757A (ja) 1985-11-06
JPS6155106B2 JPS6155106B2 (enrdf_load_stackoverflow) 1986-11-26

Family

ID=12301513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60030354A Granted JPS60221757A (ja) 1985-02-20 1985-02-20 露光用マスク

Country Status (1)

Country Link
JP (1) JPS60221757A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362229A (ja) * 1986-09-03 1988-03-18 Canon Inc 露光装置
WO1999009456A1 (en) * 1997-08-19 1999-02-25 Micron Technology, Inc. Multiple image reticle for forming layers
US6368754B1 (en) 1998-11-13 2002-04-09 Nec Corporation Reticle used for fabrication of semiconductor device
CN102902155A (zh) * 2011-07-29 2013-01-30 株式会社V技术 光掩模及曝光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704946A (en) * 1969-02-20 1972-12-05 Opt Omechanisms Inc Microcircuit art generating means

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704946A (en) * 1969-02-20 1972-12-05 Opt Omechanisms Inc Microcircuit art generating means

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362229A (ja) * 1986-09-03 1988-03-18 Canon Inc 露光装置
WO1999009456A1 (en) * 1997-08-19 1999-02-25 Micron Technology, Inc. Multiple image reticle for forming layers
US5995200A (en) * 1997-08-19 1999-11-30 Micron Technology, Inc. Multiple image reticle for forming layers
US6040892A (en) * 1997-08-19 2000-03-21 Micron Technology, Inc. Multiple image reticle for forming layers
US6421111B1 (en) 1997-08-19 2002-07-16 Micron Technology, Inc. Multiple image reticle for forming layers
US6563568B2 (en) 1997-08-19 2003-05-13 Micron Technology, Inc. Multiple image reticle for forming layers
US6646722B2 (en) 1997-08-19 2003-11-11 Micron Technology, Inc. Multiple image reticle for forming layers
US6368754B1 (en) 1998-11-13 2002-04-09 Nec Corporation Reticle used for fabrication of semiconductor device
CN102902155A (zh) * 2011-07-29 2013-01-30 株式会社V技术 光掩模及曝光装置
JP2013029749A (ja) * 2011-07-29 2013-02-07 V Technology Co Ltd フォトマスク及び露光装置

Also Published As

Publication number Publication date
JPS6155106B2 (enrdf_load_stackoverflow) 1986-11-26

Similar Documents

Publication Publication Date Title
JPH09134870A (ja) パターン形成方法および形成装置
JPS60221757A (ja) 露光用マスク
US6893806B2 (en) Multiple purpose reticle layout for selective printing of test circuits
JPH01293616A (ja) 半導体集積回路の製造方法
JP2004047687A (ja) 露光方法
JPH0787174B2 (ja) パタ−ン形成方法
JP2715462B2 (ja) レチクル及びこれを用いる半導体装置の製造方法
JPS60221758A (ja) 縮小投影露光方法
JPS62296422A (ja) 露光方法
JP2545431B2 (ja) リソグラフィ―用レチクルおよびレチクルパタ―ン転写方法
JPS63278230A (ja) 半導体装置の製造方法
JPH06224099A (ja) 半導体装置の製造方法
JPH04304453A (ja) レチクル及び露光方法
JPS6379318A (ja) 縮小投影露光方法
JPS5994418A (ja) 半導体装置
JP2005017314A (ja) 露光マスクおよび半導体装置の製造方法
JPS6233580B2 (enrdf_load_stackoverflow)
JP2745561B2 (ja) ゲートアレイlsiの製造方法
JPH022556A (ja) 半導体デバイス製造用ステッパーレティクル
JPS6341050B2 (enrdf_load_stackoverflow)
JPS62188228A (ja) 集積回路の製造方法
JPS5877232A (ja) 半導体装置
US6410350B1 (en) Detecting die speed variations
JPS62265723A (ja) レジスト露光方法
JPH03180017A (ja) 半導体装置の製造方法