JPS60218845A - 異物検査装置 - Google Patents

異物検査装置

Info

Publication number
JPS60218845A
JPS60218845A JP59074951A JP7495184A JPS60218845A JP S60218845 A JPS60218845 A JP S60218845A JP 59074951 A JP59074951 A JP 59074951A JP 7495184 A JP7495184 A JP 7495184A JP S60218845 A JPS60218845 A JP S60218845A
Authority
JP
Japan
Prior art keywords
foreign matter
foreign
wafer
foreign object
lsi wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59074951A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458622B2 (ko
Inventor
Shunji Maeda
俊二 前田
Mitsuyoshi Koizumi
小泉　光義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59074951A priority Critical patent/JPS60218845A/ja
Publication of JPS60218845A publication Critical patent/JPS60218845A/ja
Publication of JPH0458622B2 publication Critical patent/JPH0458622B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP59074951A 1984-04-16 1984-04-16 異物検査装置 Granted JPS60218845A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59074951A JPS60218845A (ja) 1984-04-16 1984-04-16 異物検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59074951A JPS60218845A (ja) 1984-04-16 1984-04-16 異物検査装置

Publications (2)

Publication Number Publication Date
JPS60218845A true JPS60218845A (ja) 1985-11-01
JPH0458622B2 JPH0458622B2 (ko) 1992-09-18

Family

ID=13562139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59074951A Granted JPS60218845A (ja) 1984-04-16 1984-04-16 異物検査装置

Country Status (1)

Country Link
JP (1) JPS60218845A (ko)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63135848A (ja) * 1986-11-28 1988-06-08 Hitachi Ltd 欠陥検査装置
JPS63179242A (ja) * 1987-01-20 1988-07-23 Nippon Telegr & Teleph Corp <Ntt> 異物を検査する方法
JPH01147513A (ja) * 1987-12-04 1989-06-09 Hitachi Ltd 異物解析装置
JPH08220005A (ja) * 1995-02-14 1996-08-30 Mitsubishi Electric Corp 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
US5877035A (en) * 1995-02-14 1999-03-02 Mitsubishi Denki Kabushiki Kaisha Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same
JP2008215940A (ja) * 2007-03-01 2008-09-18 Canon Inc 異物検査装置及びこれを用いた異物検査方法
JP2012203074A (ja) * 2011-03-24 2012-10-22 Hoya Corp マスクブランクの欠陥分析方法
JP2015087114A (ja) * 2013-10-28 2015-05-07 凸版印刷株式会社 検査装置
JP2015111161A (ja) * 2015-03-17 2015-06-18 大日本印刷株式会社 異物検査装置、異物検査方法
US11239051B2 (en) 2017-02-13 2022-02-01 Hitachi High-Tech Corporation Charged particle beam device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364092A (en) * 1976-11-19 1978-06-08 Hitachi Ltd Element analyzer
JPS57113227A (en) * 1980-12-19 1982-07-14 Ibm Method and device for inspecting article to be inspected with pattern
JPS57197454A (en) * 1981-05-29 1982-12-03 Rigaku Denki Kogyo Kk X-ray analysing apparatus
JPS58112909U (ja) * 1982-01-28 1983-08-02 セイコーインスツルメンツ株式会社 Ｘ線膜厚装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364092A (en) * 1976-11-19 1978-06-08 Hitachi Ltd Element analyzer
JPS57113227A (en) * 1980-12-19 1982-07-14 Ibm Method and device for inspecting article to be inspected with pattern
JPS57197454A (en) * 1981-05-29 1982-12-03 Rigaku Denki Kogyo Kk X-ray analysing apparatus
JPS58112909U (ja) * 1982-01-28 1983-08-02 セイコーインスツルメンツ株式会社 Ｘ線膜厚装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63135848A (ja) * 1986-11-28 1988-06-08 Hitachi Ltd 欠陥検査装置
JPS63179242A (ja) * 1987-01-20 1988-07-23 Nippon Telegr & Teleph Corp <Ntt> 異物を検査する方法
JPH01147513A (ja) * 1987-12-04 1989-06-09 Hitachi Ltd 異物解析装置
JPH08220005A (ja) * 1995-02-14 1996-08-30 Mitsubishi Electric Corp 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
US5877035A (en) * 1995-02-14 1999-03-02 Mitsubishi Denki Kabushiki Kaisha Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same
US6255127B1 (en) 1995-02-14 2001-07-03 Seiko Instruments Inc. Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same
US6355495B1 (en) 1995-02-14 2002-03-12 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for analyzing minute foreign substance, and process for semiconductor elements or liquid crystal elements by use thereof
JP2008215940A (ja) * 2007-03-01 2008-09-18 Canon Inc 異物検査装置及びこれを用いた異物検査方法
US7629577B2 (en) 2007-03-01 2009-12-08 Canon Kabushiki Kaisha Foreign matter or abnormal unsmoothness inspection apparatus and foreign matter or abnormal unsmoothness inspection method
KR100944280B1 (ko) 2007-03-01 2010-02-24 캐논 가부시끼가이샤 이물 또는 이상비평활물 검사장치 및 이물 또는이상비평활물 검사방법
US8003939B2 (en) 2007-03-01 2011-08-23 Canon Kabushiki Kaisha Foreign matter or abnormal unsmoothness inspection apparatus and foreign matter or abnormal unsmoothness inspection method
JP2012203074A (ja) * 2011-03-24 2012-10-22 Hoya Corp マスクブランクの欠陥分析方法
JP2015087114A (ja) * 2013-10-28 2015-05-07 凸版印刷株式会社 検査装置
JP2015111161A (ja) * 2015-03-17 2015-06-18 大日本印刷株式会社 異物検査装置、異物検査方法
US11239051B2 (en) 2017-02-13 2022-02-01 Hitachi High-Tech Corporation Charged particle beam device

Also Published As

Publication number Publication date
JPH0458622B2 (ko) 1992-09-18

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Legal Events

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EXPY Cancellation because of completion of term