JPS60218650A - パタ−ン露光方法 - Google Patents

パタ−ン露光方法

Info

Publication number
JPS60218650A
JPS60218650A JP59074905A JP7490584A JPS60218650A JP S60218650 A JPS60218650 A JP S60218650A JP 59074905 A JP59074905 A JP 59074905A JP 7490584 A JP7490584 A JP 7490584A JP S60218650 A JPS60218650 A JP S60218650A
Authority
JP
Japan
Prior art keywords
exposure
long
exposed
workpiece
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59074905A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0585895B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hideyuki Suzuki
秀之 鈴木
Masaki Fukaya
深谷　正樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59074905A priority Critical patent/JPS60218650A/ja
Publication of JPS60218650A publication Critical patent/JPS60218650A/ja
Publication of JPH0585895B2 publication Critical patent/JPH0585895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59074905A 1984-04-16 1984-04-16 パタ−ン露光方法 Granted JPS60218650A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59074905A JPS60218650A (ja) 1984-04-16 1984-04-16 パタ−ン露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59074905A JPS60218650A (ja) 1984-04-16 1984-04-16 パタ−ン露光方法

Publications (2)

Publication Number Publication Date
JPS60218650A true JPS60218650A (ja) 1985-11-01
JPH0585895B2 JPH0585895B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-12-09

Family

ID=13560868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59074905A Granted JPS60218650A (ja) 1984-04-16 1984-04-16 パタ−ン露光方法

Country Status (1)

Country Link
JP (1) JPS60218650A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017941A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-18 1975-02-25
JPS52155976A (en) * 1976-06-18 1977-12-24 Thomson Csf Method of forming mask for integrated circuit pattern
JPS5617341A (en) * 1979-07-23 1981-02-19 Nippon Telegr & Teleph Corp <Ntt> Alignment stage for step and repeat exposure
JPS5848053A (ja) * 1981-09-17 1983-03-19 Fujitsu Ltd マスクパタ−ンの間隙発生防止方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017941A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-18 1975-02-25
JPS52155976A (en) * 1976-06-18 1977-12-24 Thomson Csf Method of forming mask for integrated circuit pattern
JPS5617341A (en) * 1979-07-23 1981-02-19 Nippon Telegr & Teleph Corp <Ntt> Alignment stage for step and repeat exposure
JPS5848053A (ja) * 1981-09-17 1983-03-19 Fujitsu Ltd マスクパタ−ンの間隙発生防止方法

Also Published As

Publication number Publication date
JPH0585895B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-12-09

Similar Documents

Publication Publication Date Title
JPH0464454B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS55129333A (en) Scale-down projection aligner and mask used for this
JPS60218650A (ja) パタ−ン露光方法
US5598250A (en) Prefabricated modified illumination apparatus for forming fine patterns in a semiconductor device
JPS5463680A (en) Production of mask for integrated circuit
JPH1123821A (ja) 回折光学素子及びその製造方法及び製造装置
JPH0560584B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH03237459A (ja) 半導体ウエハの露光方法およびステップ露光用レチクル
JPH10261559A (ja) 半導体装置の製造方法および露光装置
JPS5931852B2 (ja) フォトレジスト露光用マスク
JPS58162348A (ja) レ−ザ−印刷装置
JPS6334266Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6155106B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH02135343A (ja) マスク
JPS58207621A (ja) 半導体ウエ−ハ
JPS58125040A (ja) ホトマスク
JPS5612644A (en) Manufacture of photomask
JPS62247372A (ja) 縮小投影露光方法
JPS55138839A (en) Method of fabricating semiconductor device
JPS5870528A (ja) 半導体装置及びその製造方法
JPH02106746A (ja) マスクブランクス
JPH0262541A (ja) レチクル及びこれを用いる半導体装置の製造方法
JP2000292942A (ja) 露光装置及び露光方法
JPS61192434A (ja) ステ−ジ装置
JPS60170935A (ja) 集積回路用ホトマスク