JPS6021553A - 三次元集積回路 - Google Patents

三次元集積回路

Info

Publication number
JPS6021553A
JPS6021553A JP58127688A JP12768883A JPS6021553A JP S6021553 A JPS6021553 A JP S6021553A JP 58127688 A JP58127688 A JP 58127688A JP 12768883 A JP12768883 A JP 12768883A JP S6021553 A JPS6021553 A JP S6021553A
Authority
JP
Japan
Prior art keywords
layer
integrated circuit
transistor
ground line
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58127688A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0563942B2 (enrdf_load_stackoverflow
Inventor
Hideo Sunami
英夫 角南
Osamu Okura
理 大倉
Kikuo Kusukawa
喜久雄 楠川
Masanobu Miyao
正信 宮尾
Masahiro Shigeniwa
昌弘 茂庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58127688A priority Critical patent/JPS6021553A/ja
Publication of JPS6021553A publication Critical patent/JPS6021553A/ja
Publication of JPH0563942B2 publication Critical patent/JPH0563942B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58127688A 1983-07-15 1983-07-15 三次元集積回路 Granted JPS6021553A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58127688A JPS6021553A (ja) 1983-07-15 1983-07-15 三次元集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58127688A JPS6021553A (ja) 1983-07-15 1983-07-15 三次元集積回路

Publications (2)

Publication Number Publication Date
JPS6021553A true JPS6021553A (ja) 1985-02-02
JPH0563942B2 JPH0563942B2 (enrdf_load_stackoverflow) 1993-09-13

Family

ID=14966240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58127688A Granted JPS6021553A (ja) 1983-07-15 1983-07-15 三次元集積回路

Country Status (1)

Country Link
JP (1) JPS6021553A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180466A (ja) * 1985-02-06 1986-08-13 Agency Of Ind Science & Technol 積層型半導体装置
US4679299A (en) * 1986-08-11 1987-07-14 Ncr Corporation Formation of self-aligned stacked CMOS structures by lift-off
US4875086A (en) * 1987-05-22 1989-10-17 Texas Instruments Incorporated Silicon-on-insulator integrated circuits and method
JPH0351312A (ja) * 1989-07-14 1991-03-05 Unitika Ltd 白度の向上した蓄熱保温性繊維
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
US5028976A (en) * 1986-10-17 1991-07-02 Canon Kabushiki Kaisha Complementary MOS integrated circuit device
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
US7361944B2 (en) * 2004-03-18 2008-04-22 Seiko Epson Corporation Electrical device with a plurality of thin-film device layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839030A (ja) * 1981-08-31 1983-03-07 Matsushita Electric Ind Co Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839030A (ja) * 1981-08-31 1983-03-07 Matsushita Electric Ind Co Ltd 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180466A (ja) * 1985-02-06 1986-08-13 Agency Of Ind Science & Technol 積層型半導体装置
US4679299A (en) * 1986-08-11 1987-07-14 Ncr Corporation Formation of self-aligned stacked CMOS structures by lift-off
US5028976A (en) * 1986-10-17 1991-07-02 Canon Kabushiki Kaisha Complementary MOS integrated circuit device
US4875086A (en) * 1987-05-22 1989-10-17 Texas Instruments Incorporated Silicon-on-insulator integrated circuits and method
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
JPH0351312A (ja) * 1989-07-14 1991-03-05 Unitika Ltd 白度の向上した蓄熱保温性繊維
US7361944B2 (en) * 2004-03-18 2008-04-22 Seiko Epson Corporation Electrical device with a plurality of thin-film device layers

Also Published As

Publication number Publication date
JPH0563942B2 (enrdf_load_stackoverflow) 1993-09-13

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