JPS60206161A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS60206161A
JPS60206161A JP59062926A JP6292684A JPS60206161A JP S60206161 A JPS60206161 A JP S60206161A JP 59062926 A JP59062926 A JP 59062926A JP 6292684 A JP6292684 A JP 6292684A JP S60206161 A JPS60206161 A JP S60206161A
Authority
JP
Japan
Prior art keywords
wiring
power supply
layer
wiring layer
supply wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59062926A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0552671B2 (enExample
Inventor
Fumio Horiguchi
文男 堀口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59062926A priority Critical patent/JPS60206161A/ja
Priority to EP85302251A priority patent/EP0163384B1/en
Priority to DE8585302251T priority patent/DE3576763D1/de
Publication of JPS60206161A publication Critical patent/JPS60206161A/ja
Priority to US07/905,232 priority patent/US5202751A/en
Publication of JPH0552671B2 publication Critical patent/JPH0552671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/496—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10W20/427—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59062926A 1984-03-30 1984-03-30 半導体集積回路 Granted JPS60206161A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59062926A JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路
EP85302251A EP0163384B1 (en) 1984-03-30 1985-04-01 Power source lines arrangement in an integrated circuit
DE8585302251T DE3576763D1 (de) 1984-03-30 1985-04-01 Leiteranordnung fuer die energieversorgung in einer integrierten schaltung.
US07/905,232 US5202751A (en) 1984-03-30 1992-06-29 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59062926A JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60206161A true JPS60206161A (ja) 1985-10-17
JPH0552671B2 JPH0552671B2 (enExample) 1993-08-06

Family

ID=13214367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59062926A Granted JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路

Country Status (3)

Country Link
EP (1) EP0163384B1 (enExample)
JP (1) JPS60206161A (enExample)
DE (1) DE3576763D1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639137U (enExample) * 1986-07-03 1988-01-21
JPS63158851A (ja) * 1986-12-22 1988-07-01 Nec Corp 半導体集積回路装置
JPS63164352A (ja) * 1986-12-26 1988-07-07 Nec Corp 半導体集積回路
JPH01283863A (ja) * 1988-05-10 1989-11-15 Nec Corp Ｍｏｓ型半導体装置
US5278799A (en) * 1990-05-25 1994-01-11 Oki Electric Industry Co., Ltd. Semiconductor memory circuit
US5280453A (en) * 1990-05-31 1994-01-18 Oki Electric Industry Co., Ltd. Semiconductor memory device with noise reduction system
JPH06140607A (ja) * 1992-10-28 1994-05-20 Mitsubishi Electric Corp 半導体集積回路
US6396123B1 (en) 1999-10-15 2002-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device provided with on-chip decoupling condenser utilizing CMP dummy patterns

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2606845B2 (ja) * 1987-06-19 1997-05-07 富士通株式会社 半導体集積回路
JPH0654774B2 (ja) * 1987-11-30 1994-07-20 株式会社東芝 半導体装置及びその製造方法
JPH01297839A (ja) * 1988-05-26 1989-11-30 Toshiba Corp 半導体装置
JPH0750708B2 (ja) * 1989-04-26 1995-05-31 株式会社東芝 半導体装置
JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
FR2713399B1 (fr) * 1993-12-01 1996-03-01 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs.
JPH07169807A (ja) * 1993-12-16 1995-07-04 Nippondenso Co Ltd 半導体ウェハ
KR20010040904A (ko) 1998-12-16 2001-05-15 인피니언 테크놀로지스 아게 용량성 성분들을 가지는 집적 회로

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261772A (en) * 1979-07-06 1981-04-14 American Microsystems, Inc. Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
US4471374A (en) * 1980-06-30 1984-09-11 Inmos Corporation Single polycrystalline silicon memory cell
FR2493045A1 (fr) * 1980-10-23 1982-04-30 Thomson Csf Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639137U (enExample) * 1986-07-03 1988-01-21
JPS63158851A (ja) * 1986-12-22 1988-07-01 Nec Corp 半導体集積回路装置
JPS63164352A (ja) * 1986-12-26 1988-07-07 Nec Corp 半導体集積回路
JPH01283863A (ja) * 1988-05-10 1989-11-15 Nec Corp Ｍｏｓ型半導体装置
US5278799A (en) * 1990-05-25 1994-01-11 Oki Electric Industry Co., Ltd. Semiconductor memory circuit
US5280453A (en) * 1990-05-31 1994-01-18 Oki Electric Industry Co., Ltd. Semiconductor memory device with noise reduction system
JPH06140607A (ja) * 1992-10-28 1994-05-20 Mitsubishi Electric Corp 半導体集積回路
US6396123B1 (en) 1999-10-15 2002-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device provided with on-chip decoupling condenser utilizing CMP dummy patterns

Also Published As

Publication number Publication date
JPH0552671B2 (enExample) 1993-08-06
DE3576763D1 (de) 1990-04-26
EP0163384A1 (en) 1985-12-04
EP0163384B1 (en) 1990-03-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term