DE3576763D1 - Leiteranordnung fuer die energieversorgung in einer integrierten schaltung. - Google Patents

Leiteranordnung fuer die energieversorgung in einer integrierten schaltung.

Info

Publication number
DE3576763D1
DE3576763D1 DE8585302251T DE3576763T DE3576763D1 DE 3576763 D1 DE3576763 D1 DE 3576763D1 DE 8585302251 T DE8585302251 T DE 8585302251T DE 3576763 T DE3576763 T DE 3576763T DE 3576763 D1 DE3576763 D1 DE 3576763D1
Authority
DE
Germany
Prior art keywords
energy supply
circuit
integrated circuit
circuit arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585302251T
Other languages
German (de)
English (en)
Inventor
Fumio Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3576763D1 publication Critical patent/DE3576763D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W20/496—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10W20/427—
DE8585302251T 1984-03-30 1985-04-01 Leiteranordnung fuer die energieversorgung in einer integrierten schaltung. Expired - Lifetime DE3576763D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59062926A JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路

Publications (1)

Publication Number Publication Date
DE3576763D1 true DE3576763D1 (de) 1990-04-26

Family

ID=13214367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585302251T Expired - Lifetime DE3576763D1 (de) 1984-03-30 1985-04-01 Leiteranordnung fuer die energieversorgung in einer integrierten schaltung.

Country Status (3)

Country Link
EP (1) EP0163384B1 (enExample)
JP (1) JPS60206161A (enExample)
DE (1) DE3576763D1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639137U (enExample) * 1986-07-03 1988-01-21
JPS63158851A (ja) * 1986-12-22 1988-07-01 Nec Corp 半導体集積回路装置
JPS63164352A (ja) * 1986-12-26 1988-07-07 Nec Corp 半導体集積回路
JP2606845B2 (ja) * 1987-06-19 1997-05-07 富士通株式会社 半導体集積回路
JPH0654774B2 (ja) * 1987-11-30 1994-07-20 株式会社東芝 半導体装置及びその製造方法
JPH01283863A (ja) * 1988-05-10 1989-11-15 Nec Corp Ｍｏｓ型半導体装置
JPH01297839A (ja) * 1988-05-26 1989-11-30 Toshiba Corp 半導体装置
JPH0750708B2 (ja) * 1989-04-26 1995-05-31 株式会社東芝 半導体装置
JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
US5280453A (en) * 1990-05-31 1994-01-18 Oki Electric Industry Co., Ltd. Semiconductor memory device with noise reduction system
JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
JPH06140607A (ja) * 1992-10-28 1994-05-20 Mitsubishi Electric Corp 半導体集積回路
FR2713399B1 (fr) * 1993-12-01 1996-03-01 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs.
JPH07169807A (ja) * 1993-12-16 1995-07-04 Nippondenso Co Ltd 半導体ウェハ
KR20010040904A (ko) 1998-12-16 2001-05-15 인피니언 테크놀로지스 아게 용량성 성분들을 가지는 집적 회로
JP2001118988A (ja) 1999-10-15 2001-04-27 Mitsubishi Electric Corp 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261772A (en) * 1979-07-06 1981-04-14 American Microsystems, Inc. Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
US4471374A (en) * 1980-06-30 1984-09-11 Inmos Corporation Single polycrystalline silicon memory cell
FR2493045A1 (fr) * 1980-10-23 1982-04-30 Thomson Csf Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0552671B2 (enExample) 1993-08-06
JPS60206161A (ja) 1985-10-17
EP0163384A1 (en) 1985-12-04
EP0163384B1 (en) 1990-03-21

Similar Documents

Publication Publication Date Title
DE3581548D1 (de) Stromversorgungsleiter-struktur in einer integrierten halbleiterschaltung.
DE3581254D1 (de) Schutzvorrichtung in einer integrierten schaltung.
DE69014463D1 (de) Stromversorgungseinrichtung.
DE3587090D1 (de) Geregelte stromversorgung.
DE3780320D1 (de) Fahrzeug-leistungsversorgung mit mehrfachen leistungsversorgungsspannungen.
DE3587715D1 (de) Integrierte Schaltung.
DE3783551D1 (de) Leistungsversorgungseinrichtung fuer entladungslast.
DE3886273D1 (de) Integrierte Halbleiterschaltungsanordnung mit Mehrschicht-Stromversorgungsleitungen.
DE69021735D1 (de) Stromversorgungseinheit.
NO166906C (no) Stroemforsyning paa/av-tilbakestillingsgenerator.
DE69108586D1 (de) Stromversorgungsschaltung.
DE3576763D1 (de) Leiteranordnung fuer die energieversorgung in einer integrierten schaltung.
DE58905836D1 (de) Hochleistungsstrahler.
DE69017080D1 (de) VHF-Gleichstrom-Gleichstrom-Leistungsversorgung.
DE3586840D1 (de) Speichersystem mit integriertem schaltkreis.
IT8468191A1 (it) Alimentatore di dispersione.
DE69002048D1 (de) Stromlinienverkleidungen fuer flugzeug.
DE69012507D1 (de) Freigabeschaltung mit integrierter thermischer Abschaltung.
DE69108302D1 (de) Elektronische Schaltung mit einer Federanordnung für die Stromzufuhr.
DE3751607D1 (de) Stromversorgungsleitungen in einer integrierten Halbleiterschaltung.
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
NO164807C (no) Avbruddsfri stroemforsyning.
DE3583886D1 (de) Integrierte schaltung mit einer eingangsschutzanordnung.
DE3870331D1 (de) Leistungsversorgungsschaltung.
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee