JPH0552671B2 - - Google Patents

Info

Publication number
JPH0552671B2
JPH0552671B2 JP59062926A JP6292684A JPH0552671B2 JP H0552671 B2 JPH0552671 B2 JP H0552671B2 JP 59062926 A JP59062926 A JP 59062926A JP 6292684 A JP6292684 A JP 6292684A JP H0552671 B2 JPH0552671 B2 JP H0552671B2
Authority
JP
Japan
Prior art keywords
power supply
wiring
wiring layer
layer
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59062926A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60206161A (ja
Inventor
Fumio Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59062926A priority Critical patent/JPS60206161A/ja
Priority to EP85302251A priority patent/EP0163384B1/en
Priority to DE8585302251T priority patent/DE3576763D1/de
Publication of JPS60206161A publication Critical patent/JPS60206161A/ja
Priority to US07/905,232 priority patent/US5202751A/en
Publication of JPH0552671B2 publication Critical patent/JPH0552671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/496—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10W20/427—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59062926A 1984-03-30 1984-03-30 半導体集積回路 Granted JPS60206161A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59062926A JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路
EP85302251A EP0163384B1 (en) 1984-03-30 1985-04-01 Power source lines arrangement in an integrated circuit
DE8585302251T DE3576763D1 (de) 1984-03-30 1985-04-01 Leiteranordnung fuer die energieversorgung in einer integrierten schaltung.
US07/905,232 US5202751A (en) 1984-03-30 1992-06-29 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59062926A JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60206161A JPS60206161A (ja) 1985-10-17
JPH0552671B2 true JPH0552671B2 (enExample) 1993-08-06

Family

ID=13214367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59062926A Granted JPS60206161A (ja) 1984-03-30 1984-03-30 半導体集積回路

Country Status (3)

Country Link
EP (1) EP0163384B1 (enExample)
JP (1) JPS60206161A (enExample)
DE (1) DE3576763D1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639137U (enExample) * 1986-07-03 1988-01-21
JPS63158851A (ja) * 1986-12-22 1988-07-01 Nec Corp 半導体集積回路装置
JPS63164352A (ja) * 1986-12-26 1988-07-07 Nec Corp 半導体集積回路
JP2606845B2 (ja) * 1987-06-19 1997-05-07 富士通株式会社 半導体集積回路
JPH0654774B2 (ja) * 1987-11-30 1994-07-20 株式会社東芝 半導体装置及びその製造方法
JPH01283863A (ja) * 1988-05-10 1989-11-15 Nec Corp Ｍｏｓ型半導体装置
JPH01297839A (ja) * 1988-05-26 1989-11-30 Toshiba Corp 半導体装置
JPH0750708B2 (ja) * 1989-04-26 1995-05-31 株式会社東芝 半導体装置
JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
US5280453A (en) * 1990-05-31 1994-01-18 Oki Electric Industry Co., Ltd. Semiconductor memory device with noise reduction system
JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
JPH06140607A (ja) * 1992-10-28 1994-05-20 Mitsubishi Electric Corp 半導体集積回路
FR2713399B1 (fr) * 1993-12-01 1996-03-01 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs.
JPH07169807A (ja) * 1993-12-16 1995-07-04 Nippondenso Co Ltd 半導体ウェハ
KR20010040904A (ko) 1998-12-16 2001-05-15 인피니언 테크놀로지스 아게 용량성 성분들을 가지는 집적 회로
JP2001118988A (ja) 1999-10-15 2001-04-27 Mitsubishi Electric Corp 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261772A (en) * 1979-07-06 1981-04-14 American Microsystems, Inc. Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
US4471374A (en) * 1980-06-30 1984-09-11 Inmos Corporation Single polycrystalline silicon memory cell
FR2493045A1 (fr) * 1980-10-23 1982-04-30 Thomson Csf Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
DE3576763D1 (de) 1990-04-26
JPS60206161A (ja) 1985-10-17
EP0163384A1 (en) 1985-12-04
EP0163384B1 (en) 1990-03-21

Similar Documents

Publication Publication Date Title
US8674419B2 (en) Method of forming a CMOS structure having gate insulation films of different thicknesses
US6245611B1 (en) Process for manufacturing semiconductor integrated circuit device
JPH0552671B2 (enExample)
US4849801A (en) Semiconductor memory device having increased capacitance for the storing nodes of the memory cells
US4962052A (en) Method for producing semiconductor integrated circuit device
JPS6316658A (ja) 半導体記憶装置
JPS61280651A (ja) 半導体記憶装置
JP3780003B2 (ja) 半導体集積回路装置
US5202751A (en) Semiconductor integrated circuit
US4990999A (en) Semiconductor memory device using high-density and high-speed MOS elements
JPS6173367A (ja) 半導体装置
JPH05198742A (ja) 半導体集積回路装置
JPS60136374A (ja) 半導体装置
JPS634671A (ja) 半導体記憶装置
JPH1140680A (ja) 半導体集積回路装置の製造方法および半導体集積回路装置
JPH01114071A (ja) 半導体記憶装置
JP2555870B2 (ja) 半導体記憶装置
JPH0521742A (ja) 半導体メモリ
JPH0415556B2 (enExample)
JPS6221072Y2 (enExample)
JPH0640574B2 (ja) 半導体記憶装置
KR19980030794A (ko) 증가된 셀 노드 캐패시턴스를 갖는 반도체 메모리장치
JPH0427708B2 (enExample)
KR20000010317A (ko) 게이트 턴 오프 사이리스터 채용한 메모리 소자
JPH11220040A (ja) スタティック半導体記憶装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term