JPS60153124A - 塗膜形成方法 - Google Patents

塗膜形成方法

Info

Publication number
JPS60153124A
JPS60153124A JP59008757A JP875784A JPS60153124A JP S60153124 A JPS60153124 A JP S60153124A JP 59008757 A JP59008757 A JP 59008757A JP 875784 A JP875784 A JP 875784A JP S60153124 A JPS60153124 A JP S60153124A
Authority
JP
Japan
Prior art keywords
resist
film
substrate
coating
radical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59008757A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241894B2 (https=
Inventor
Kazufumi Ogawa
一文 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59008757A priority Critical patent/JPS60153124A/ja
Publication of JPS60153124A publication Critical patent/JPS60153124A/ja
Publication of JPH0241894B2 publication Critical patent/JPH0241894B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/165Monolayers, e.g. Langmuir-Blodgett

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59008757A 1984-01-20 1984-01-20 塗膜形成方法 Granted JPS60153124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59008757A JPS60153124A (ja) 1984-01-20 1984-01-20 塗膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59008757A JPS60153124A (ja) 1984-01-20 1984-01-20 塗膜形成方法

Publications (2)

Publication Number Publication Date
JPS60153124A true JPS60153124A (ja) 1985-08-12
JPH0241894B2 JPH0241894B2 (https=) 1990-09-19

Family

ID=11701796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59008757A Granted JPS60153124A (ja) 1984-01-20 1984-01-20 塗膜形成方法

Country Status (1)

Country Link
JP (1) JPS60153124A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6339664A (ja) * 1986-08-01 1988-02-20 Ricoh Co Ltd 半導性ないし導電性薄膜の製造方法
JPS63185476A (ja) * 1987-01-28 1988-08-01 Matsushita Electric Ind Co Ltd 表面の酸化防止方法
JPH01275613A (ja) * 1988-04-28 1989-11-06 Matsushita Electric Ind Co Ltd ポリアセチレン又はポリアセン型超長共役ポリマーの製造方法
JPH0319244A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6339664A (ja) * 1986-08-01 1988-02-20 Ricoh Co Ltd 半導性ないし導電性薄膜の製造方法
JPS63185476A (ja) * 1987-01-28 1988-08-01 Matsushita Electric Ind Co Ltd 表面の酸化防止方法
JPH01275613A (ja) * 1988-04-28 1989-11-06 Matsushita Electric Ind Co Ltd ポリアセチレン又はポリアセン型超長共役ポリマーの製造方法
JPH0319244A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0241894B2 (https=) 1990-09-19

Similar Documents

Publication Publication Date Title
US3934057A (en) High sensitivity positive resist layers and mask formation process
JPS60153124A (ja) 塗膜形成方法
JPH02222951A (ja) 耐酸素プラズマ性フオトレジスト
CN117747544A (zh) 一种硅通孔的形成方法
JPS60260946A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPS5828571B2 (ja) 微細加工用レジスト形成方法
KR100251993B1 (ko) 티형 게이트 전도막 패턴 형성 방법
JPH01118127A (ja) パターン形成方法
JPS63271334A (ja) 二層構造電子線レジスト用平坦化材料
JPS6256947A (ja) 二層構造レジスト用平坦化層組成物
JPS59148335A (ja) 微細パタ−ン形成法
JPH02156244A (ja) パターン形成方法
JPS5999720A (ja) レジスト像形成方法
JPS6116526A (ja) パタ−ン形成方法
JPS6112029A (ja) 二層レジスト形成方法
JPS60191245A (ja) レジスト膜材料およびレジストパタ−ンの形成方法
JPS62221119A (ja) 透孔形成方法
KR0144420B1 (ko) 리소그라피 공정방법
JPS6153726A (ja) パタ−ン形成法
JPS61214433A (ja) レジスト被膜及びパタ−ンの形成方法
JPS6152567B2 (https=)
HK40042024A (zh) 铟柱及其制备方法
JPS6074521A (ja) パタ−ン形成方法
JPS6343323A (ja) 半導体装置の製造方法
JPS61245161A (ja) X線用マスクの製造方法