JPS60140847A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS60140847A JPS60140847A JP25003183A JP25003183A JPS60140847A JP S60140847 A JPS60140847 A JP S60140847A JP 25003183 A JP25003183 A JP 25003183A JP 25003183 A JP25003183 A JP 25003183A JP S60140847 A JPS60140847 A JP S60140847A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- insulating film
- metal
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25003183A JPS60140847A (ja) | 1983-12-28 | 1983-12-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25003183A JPS60140847A (ja) | 1983-12-28 | 1983-12-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60140847A true JPS60140847A (ja) | 1985-07-25 |
JPH0441498B2 JPH0441498B2 (enrdf_load_stackoverflow) | 1992-07-08 |
Family
ID=17201801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25003183A Granted JPS60140847A (ja) | 1983-12-28 | 1983-12-28 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60140847A (enrdf_load_stackoverflow) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52124860A (en) * | 1976-04-13 | 1977-10-20 | Toshiba Corp | Electrode formation method for semiconductor devices |
JPS5544713A (en) * | 1978-09-26 | 1980-03-29 | Toshiba Corp | Semiconductor device |
JPS5660030A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS56162829A (en) * | 1980-05-20 | 1981-12-15 | Nec Corp | Manufacture of semiconductor device |
JPS57176762A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Semiconductor device |
JPS5873135A (ja) * | 1981-10-28 | 1983-05-02 | Nec Corp | 半導体装置とその製造方法 |
-
1983
- 1983-12-28 JP JP25003183A patent/JPS60140847A/ja active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52124860A (en) * | 1976-04-13 | 1977-10-20 | Toshiba Corp | Electrode formation method for semiconductor devices |
JPS5544713A (en) * | 1978-09-26 | 1980-03-29 | Toshiba Corp | Semiconductor device |
JPS5660030A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS56162829A (en) * | 1980-05-20 | 1981-12-15 | Nec Corp | Manufacture of semiconductor device |
JPS57176762A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Semiconductor device |
JPS5873135A (ja) * | 1981-10-28 | 1983-05-02 | Nec Corp | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0441498B2 (enrdf_load_stackoverflow) | 1992-07-08 |
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