JPS60131970A - 堆積膜形成法 - Google Patents

堆積膜形成法

Info

Publication number
JPS60131970A
JPS60131970A JP24123383A JP24123383A JPS60131970A JP S60131970 A JPS60131970 A JP S60131970A JP 24123383 A JP24123383 A JP 24123383A JP 24123383 A JP24123383 A JP 24123383A JP S60131970 A JPS60131970 A JP S60131970A
Authority
JP
Japan
Prior art keywords
deposited film
space
active species
layer
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24123383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517312B2 (enrdf_load_stackoverflow
Inventor
Masaaki Hirooka
広岡　政昭
Shunichi Ishihara
俊一 石原
Junichi Hanna
純一 半那
Isamu Shimizu
勇 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP24123383A priority Critical patent/JPS60131970A/ja
Publication of JPS60131970A publication Critical patent/JPS60131970A/ja
Publication of JPH0517312B2 publication Critical patent/JPH0517312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP24123383A 1983-12-20 1983-12-20 堆積膜形成法 Granted JPS60131970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24123383A JPS60131970A (ja) 1983-12-20 1983-12-20 堆積膜形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24123383A JPS60131970A (ja) 1983-12-20 1983-12-20 堆積膜形成法

Publications (2)

Publication Number Publication Date
JPS60131970A true JPS60131970A (ja) 1985-07-13
JPH0517312B2 JPH0517312B2 (enrdf_load_stackoverflow) 1993-03-08

Family

ID=17071179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24123383A Granted JPS60131970A (ja) 1983-12-20 1983-12-20 堆積膜形成法

Country Status (1)

Country Link
JP (1) JPS60131970A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62218572A (ja) * 1986-03-19 1987-09-25 Canon Inc プラズマｃｖｄ法による堆積膜形成装置
US4846145A (en) * 1985-10-11 1989-07-11 Katsuyoshi Inouci Infrared ray radiation sauna device with heat source of combustion heat
JP2001253706A (ja) * 2000-03-13 2001-09-18 Jsr Corp シリルシクロペンタシランおよびその用途
JP2004071970A (ja) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd 太陽電池用シリコン基板の製造方法およびその製造システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS56102577A (en) * 1980-01-18 1981-08-17 Mitsubishi Electric Corp Method and device for forming thin film
JPS5773174A (en) * 1980-10-24 1982-05-07 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for coating film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS56102577A (en) * 1980-01-18 1981-08-17 Mitsubishi Electric Corp Method and device for forming thin film
JPS5773174A (en) * 1980-10-24 1982-05-07 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for coating film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4846145A (en) * 1985-10-11 1989-07-11 Katsuyoshi Inouci Infrared ray radiation sauna device with heat source of combustion heat
JPS62218572A (ja) * 1986-03-19 1987-09-25 Canon Inc プラズマｃｖｄ法による堆積膜形成装置
JP2001253706A (ja) * 2000-03-13 2001-09-18 Jsr Corp シリルシクロペンタシランおよびその用途
JP2004071970A (ja) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd 太陽電池用シリコン基板の製造方法およびその製造システム

Also Published As

Publication number Publication date
JPH0517312B2 (enrdf_load_stackoverflow) 1993-03-08

Similar Documents

Publication Publication Date Title
US5910342A (en) Process for forming deposition film
US4657777A (en) Formation of deposited film
JPS6041047A (ja) 堆積膜形成法
JPH0647727B2 (ja) 堆積膜形成法
US5597623A (en) Process for using microwave plasma CVD
JP2787148B2 (ja) マイクロ波プラズマｃｖｄ法による堆積膜形成方法及び堆積膜形成装置
JPS60131970A (ja) 堆積膜形成法
JPH0372710B2 (enrdf_load_stackoverflow)
JPS6253587B2 (enrdf_load_stackoverflow)
JPS61247020A (ja) 堆積膜形成法
JPS60131971A (ja) 堆積膜形成法
JP2768539B2 (ja) 堆積膜形成装置
JPS6331552B2 (enrdf_load_stackoverflow)
JPS63100183A (ja) 堆積膜形成法
JPS63125679A (ja) 堆積膜形成法
JPS637373A (ja) プラズマｃｖｄ法による堆積膜形成装置
JP2009280856A (ja) 非単結晶シリコン膜の製造方法、該製造方法により形成された光導電層を有する電子写真感光体、及び、それを用いた電子写真装置
JPH08222519A (ja) 高周波プラズマｃｖｄ法による堆積膜形成方法
JPS6325069B2 (enrdf_load_stackoverflow)
JPH01727A (ja) 堆積膜形成法
JPS62228473A (ja) 堆積膜形成法
JPH0834182B2 (ja) 堆積膜形成法
JP2668408B2 (ja) 電子写真用像形成部材
JPH0897161A (ja) 高周波プラズマｃｖｄ法による堆積膜形成方法及び堆積膜形成装置
JPS63137172A (ja) アモルフアスシリコンカ−バイド膜の製法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term