JPS60127598A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS60127598A
JPS60127598A JP58235475A JP23547583A JPS60127598A JP S60127598 A JPS60127598 A JP S60127598A JP 58235475 A JP58235475 A JP 58235475A JP 23547583 A JP23547583 A JP 23547583A JP S60127598 A JPS60127598 A JP S60127598A
Authority
JP
Japan
Prior art keywords
memory
inverter
word
line
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58235475A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03715B2 (OSRAM
Inventor
Tomoji Takada
高田　知二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58235475A priority Critical patent/JPS60127598A/ja
Priority to EP84308703A priority patent/EP0145497B1/en
Priority to DE8484308703T priority patent/DE3485592D1/de
Priority to US06/681,485 priority patent/US4667310A/en
Publication of JPS60127598A publication Critical patent/JPS60127598A/ja
Publication of JPH03715B2 publication Critical patent/JPH03715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
JP58235475A 1983-12-14 1983-12-14 半導体集積回路装置 Granted JPS60127598A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58235475A JPS60127598A (ja) 1983-12-14 1983-12-14 半導体集積回路装置
EP84308703A EP0145497B1 (en) 1983-12-14 1984-12-13 Semiconductor integrated circuit device
DE8484308703T DE3485592D1 (de) 1983-12-14 1984-12-13 Integrierte halbleiterschaltungsanordnung.
US06/681,485 US4667310A (en) 1983-12-14 1984-12-13 Large scale circuit device containing simultaneously accessible memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58235475A JPS60127598A (ja) 1983-12-14 1983-12-14 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS60127598A true JPS60127598A (ja) 1985-07-08
JPH03715B2 JPH03715B2 (OSRAM) 1991-01-08

Family

ID=16986618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58235475A Granted JPS60127598A (ja) 1983-12-14 1983-12-14 半導体集積回路装置

Country Status (4)

Country Link
US (1) US4667310A (OSRAM)
EP (1) EP0145497B1 (OSRAM)
JP (1) JPS60127598A (OSRAM)
DE (1) DE3485592D1 (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236187A (ja) * 1984-05-08 1985-11-22 Nec Corp 多ポ−トレジスタセル
JPH03201293A (ja) * 1989-12-23 1991-09-03 Internatl Business Mach Corp <Ibm> 高集積化マルチポートランダムアクセスメモリ
JPH0485788A (ja) * 1990-07-27 1992-03-18 Toshiba Corp 多ポートキャッシュメモリ
JPH052888A (ja) * 1991-06-27 1993-01-08 Kawasaki Steel Corp ゲートアレイ用メモリセル回路
US6829179B2 (en) 2002-04-16 2004-12-07 Oki Electric Industry Co., Ltd. Semiconductor storage device having substrate potential control
JP2007172813A (ja) * 2005-11-25 2007-07-05 Semiconductor Energy Lab Co Ltd 半導体記憶装置及び半導体記憶装置の動作方法
JP2010049696A (ja) * 1999-06-10 2010-03-04 Agere Systems Inc 行列計算を行うためのプロセッサ素子のパイプライン処理線形アレー

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2595859B1 (fr) * 1986-03-14 1988-05-13 Radiotechnique Compelec Memoire avec tampon amplificateur
JP2748562B2 (ja) * 1988-07-13 1998-05-06 セイコーエプソン株式会社 画像処理装置
US5422857A (en) * 1989-11-21 1995-06-06 Matsushita Electric Industrial Co., Ltd. Semiconductor memory unit having overlapping addresses
US5426610A (en) * 1990-03-01 1995-06-20 Texas Instruments Incorporated Storage circuitry using sense amplifier with temporary pause for voltage supply isolation
JPH04111297A (ja) * 1990-08-30 1992-04-13 Nippon Steel Corp スタティック・ランダム・アクセス・メモリセル
JPH05151778A (ja) * 1991-06-05 1993-06-18 Mitsubishi Electric Corp スタテイツクランダムアクセスメモリおよびその制御方法
JP3153568B2 (ja) * 1991-07-03 2001-04-09 株式会社東芝 マルチポートｒａｍ用メモリセル及びマルチポートｒａｍ
JP2667941B2 (ja) * 1992-09-17 1997-10-27 三菱電機株式会社 メモリセル回路
DE19737611C2 (de) 1997-08-28 2002-09-26 Infineon Technologies Ag Fuse-Anordnung für Halbleiterspeichervorrichtung
US6198305B1 (en) 1998-03-24 2001-03-06 Cypress Semiconductor Corp. Reduced area product-term array
US6055177A (en) * 1998-06-26 2000-04-25 Cypress Semiconductor Corp. Memory cell
JP4279620B2 (ja) * 2003-07-11 2009-06-17 Ｏｋｉセミコンダクタ株式会社 レベルシフト回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493786A (en) * 1967-05-02 1970-02-03 Rca Corp Unbalanced memory cell
US3968480A (en) * 1974-04-25 1976-07-06 Honeywell Inc. Memory cell
JPS5825970B2 (ja) * 1976-10-01 1983-05-31 三菱電機株式会社 液温検知装置
US4070657A (en) * 1977-01-03 1978-01-24 Honeywell Information Systems Inc. Current mode simultaneous dual-read/single-write memory device
JPS5578561A (en) * 1978-12-08 1980-06-13 Fujitsu Ltd Master-slice lsi circuit device
JPS57113482A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Semiconductor storage device
US4412143A (en) * 1981-03-26 1983-10-25 Ncr Corporation MOS Sense amplifier
JPS58199539A (ja) * 1982-05-17 1983-11-19 Hitachi Ltd マスタ−スライス方式の半導体集積回路装置
JPS5960793A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd 半導体メモリ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236187A (ja) * 1984-05-08 1985-11-22 Nec Corp 多ポ−トレジスタセル
JPH03201293A (ja) * 1989-12-23 1991-09-03 Internatl Business Mach Corp <Ibm> 高集積化マルチポートランダムアクセスメモリ
JPH0485788A (ja) * 1990-07-27 1992-03-18 Toshiba Corp 多ポートキャッシュメモリ
JPH052888A (ja) * 1991-06-27 1993-01-08 Kawasaki Steel Corp ゲートアレイ用メモリセル回路
JP2010049696A (ja) * 1999-06-10 2010-03-04 Agere Systems Inc 行列計算を行うためのプロセッサ素子のパイプライン処理線形アレー
US6829179B2 (en) 2002-04-16 2004-12-07 Oki Electric Industry Co., Ltd. Semiconductor storage device having substrate potential control
JP2007172813A (ja) * 2005-11-25 2007-07-05 Semiconductor Energy Lab Co Ltd 半導体記憶装置及び半導体記憶装置の動作方法

Also Published As

Publication number Publication date
JPH03715B2 (OSRAM) 1991-01-08
US4667310A (en) 1987-05-19
DE3485592D1 (de) 1992-04-23
EP0145497A2 (en) 1985-06-19
EP0145497B1 (en) 1992-03-18
EP0145497A3 (en) 1988-08-31

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