JPS6012752A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法

Info

Publication number
JPS6012752A
JPS6012752A JP58119581A JP11958183A JPS6012752A JP S6012752 A JPS6012752 A JP S6012752A JP 58119581 A JP58119581 A JP 58119581A JP 11958183 A JP11958183 A JP 11958183A JP S6012752 A JPS6012752 A JP S6012752A
Authority
JP
Japan
Prior art keywords
groove
thin film
capacitor
region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58119581A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0326547B2 (OSRAM
Inventor
Takashi Morie
隆 森江
Kazushige Minegishi
峯岸　一茂
Ban Nakajima
中島　蕃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58119581A priority Critical patent/JPS6012752A/ja
Publication of JPS6012752A publication Critical patent/JPS6012752A/ja
Publication of JPH0326547B2 publication Critical patent/JPH0326547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58119581A 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法 Granted JPS6012752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119581A JPS6012752A (ja) 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119581A JPS6012752A (ja) 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6012752A true JPS6012752A (ja) 1985-01-23
JPH0326547B2 JPH0326547B2 (OSRAM) 1991-04-11

Family

ID=14764897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119581A Granted JPS6012752A (ja) 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6012752A (OSRAM)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031268A (ja) * 1983-07-29 1985-02-18 Nec Corp Ｍｉｓ型半導体記憶装置
JPS6242442A (ja) * 1985-08-19 1987-02-24 Oki Electric Ind Co Ltd ダイナミツクｒａｍ半導体装置及びその製造方法
JPS62150765A (ja) * 1985-12-24 1987-07-04 Mitsubishi Electric Corp 半導体記憶装置
JPS62177963A (ja) * 1986-01-30 1987-08-04 Mitsubishi Electric Corp 半導体記憶装置
JPS63500484A (ja) * 1985-07-25 1988-02-18 アメリカン テレフオン アンド テレグラフ カムパニ− 溝容量を含む高動作特性ｄｒａｍアレイ
JPS63232444A (ja) * 1987-03-20 1988-09-28 Mitsubishi Electric Corp 半導体装置
JPS63244673A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 半導体記憶装置
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4897702A (en) * 1987-02-24 1990-01-30 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method for the same
US4921815A (en) * 1984-07-04 1990-05-01 Hitachi, Ltd. Method of producing a semiconductor memory device having trench capacitors
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US4978634A (en) * 1989-07-25 1990-12-18 Texas Instruments, Incorporated Method of making trench DRAM cell with stacked capacitor and buried lateral contact
US4980310A (en) * 1986-10-20 1990-12-25 Mitsubishi Denki Kabushiki Kaisha Method of making a trench dram cell
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
US5026658A (en) * 1985-07-02 1991-06-25 Matsushita Electric Industrial Co., Ltd. Method of making a trench capacitor dram cell
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JP2006196843A (ja) * 2005-01-17 2006-07-27 Toshiba Corp 半導体装置およびその製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957779A (OSRAM) * 1972-06-02 1974-06-05
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
JPS5643171U (OSRAM) * 1979-09-10 1981-04-20
US4295264A (en) * 1975-12-29 1981-10-20 Texas Instruments Incorporated Method of making integrated circuit MOS capacitor using implanted region to change threshold
JPS58212161A (ja) * 1982-06-02 1983-12-09 Toshiba Corp 半導体記憶装置
JPS58215053A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
JPS592362A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS59232455A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957779A (OSRAM) * 1972-06-02 1974-06-05
US4295264A (en) * 1975-12-29 1981-10-20 Texas Instruments Incorporated Method of making integrated circuit MOS capacitor using implanted region to change threshold
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
JPS5643171U (OSRAM) * 1979-09-10 1981-04-20
JPS58212161A (ja) * 1982-06-02 1983-12-09 Toshiba Corp 半導体記憶装置
JPS58215053A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
JPS592362A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS59232455A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031268A (ja) * 1983-07-29 1985-02-18 Nec Corp Ｍｉｓ型半導体記憶装置
US4921815A (en) * 1984-07-04 1990-05-01 Hitachi, Ltd. Method of producing a semiconductor memory device having trench capacitors
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5026658A (en) * 1985-07-02 1991-06-25 Matsushita Electric Industrial Co., Ltd. Method of making a trench capacitor dram cell
JPS63500484A (ja) * 1985-07-25 1988-02-18 アメリカン テレフオン アンド テレグラフ カムパニ− 溝容量を含む高動作特性ｄｒａｍアレイ
JPS6242442A (ja) * 1985-08-19 1987-02-24 Oki Electric Ind Co Ltd ダイナミツクｒａｍ半導体装置及びその製造方法
JPS62150765A (ja) * 1985-12-24 1987-07-04 Mitsubishi Electric Corp 半導体記憶装置
JPS62177963A (ja) * 1986-01-30 1987-08-04 Mitsubishi Electric Corp 半導体記憶装置
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4980310A (en) * 1986-10-20 1990-12-25 Mitsubishi Denki Kabushiki Kaisha Method of making a trench dram cell
US4897702A (en) * 1987-02-24 1990-01-30 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method for the same
JPS63232444A (ja) * 1987-03-20 1988-09-28 Mitsubishi Electric Corp 半導体装置
JPS63244673A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 半導体記憶装置
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
US4978634A (en) * 1989-07-25 1990-12-18 Texas Instruments, Incorporated Method of making trench DRAM cell with stacked capacitor and buried lateral contact
JP2006196843A (ja) * 2005-01-17 2006-07-27 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0326547B2 (OSRAM) 1991-04-11

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