JPS60119777A - ゲ−トタ−ンオフサイリスタ - Google Patents

ゲ−トタ−ンオフサイリスタ

Info

Publication number
JPS60119777A
JPS60119777A JP58228043A JP22804383A JPS60119777A JP S60119777 A JPS60119777 A JP S60119777A JP 58228043 A JP58228043 A JP 58228043A JP 22804383 A JP22804383 A JP 22804383A JP S60119777 A JPS60119777 A JP S60119777A
Authority
JP
Japan
Prior art keywords
thyristor
metallized
electrode
gate
gate turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58228043A
Other languages
English (en)
Japanese (ja)
Inventor
Kozo Yamagami
山上　倖三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58228043A priority Critical patent/JPS60119777A/ja
Priority to DE19843448379 priority patent/DE3448379C2/de
Priority to GB8430310A priority patent/GB2150754B/en
Priority to DE19843443784 priority patent/DE3443784A1/de
Publication of JPS60119777A publication Critical patent/JPS60119777A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP58228043A 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ Pending JPS60119777A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58228043A JPS60119777A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ
DE19843448379 DE3448379C2 (de) 1983-11-30 1984-11-30 Gate-Abschaltthyristor
GB8430310A GB2150754B (en) 1983-11-30 1984-11-30 Semiconductor device electrodes
DE19843443784 DE3443784A1 (de) 1983-11-30 1984-11-30 Gate-abschaltthyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58228043A JPS60119777A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Publications (1)

Publication Number Publication Date
JPS60119777A true JPS60119777A (ja) 1985-06-27

Family

ID=16870300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58228043A Pending JPS60119777A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Country Status (3)

Country Link
JP (1) JPS60119777A (enExample)
DE (2) DE3448379C2 (enExample)
GB (1) GB2150754B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073876B2 (ja) * 2004-01-14 2008-04-09 三菱電機株式会社 半導体装置
JP5396436B2 (ja) * 2011-06-29 2014-01-22 日立オートモティブシステムズ株式会社 半導体装置ならびに半導体装置の製造方法
US9583425B2 (en) * 2012-02-15 2017-02-28 Maxim Integrated Products, Inc. Solder fatigue arrest for wafer level package

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105526B (de) * 1959-12-29 1961-04-27 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1214978B (de) * 1963-06-11 1966-04-21 Licentia Gmbh Verfahren zum Anloeten einer Goldfolie an eine vernickelte Molybdaenscheibe
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
GB1149606A (en) * 1967-02-27 1969-04-23 Motorola Inc Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
GB1196834A (en) * 1967-03-29 1970-07-01 Hitachi Ltd Improvement of Electrode Structure in a Semiconductor Device.
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device
GB1557399A (en) * 1976-04-09 1979-12-12 Int Rectifier Corp Gate controlled semiconductor device
IT1075077B (it) * 1977-03-08 1985-04-22 Ates Componenti Elettron Metodo pr realizzare contatti su semiconduttori
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPS5830147A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 半導体装置
JPS59121871A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 半導体装置
DE3301666A1 (de) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung

Also Published As

Publication number Publication date
GB2150754A (en) 1985-07-03
DE3443784C2 (enExample) 1991-10-10
DE3448379C2 (de) 1993-12-16
DE3443784A1 (de) 1985-07-18
GB2150754B (en) 1987-08-26
GB8430310D0 (en) 1985-01-09

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