JP2018117054A - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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- JP2018117054A JP2018117054A JP2017007161A JP2017007161A JP2018117054A JP 2018117054 A JP2018117054 A JP 2018117054A JP 2017007161 A JP2017007161 A JP 2017007161A JP 2017007161 A JP2017007161 A JP 2017007161A JP 2018117054 A JP2018117054 A JP 2018117054A
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Abstract
Description
図1は、本発明の第1の実施形態である実施例1に係る半導体装置の上面図である。また、図2は、図1の半導体装置におけるIGBTチップの部分の実装形態を示す上面図である。また、図3は、図1の半導体装置におけるIGBTチップの部分の上面図である。また、図4は、図1のA-A’線における半導体装置の断面の構成を示す断面図である。
図12は、本発明の第2の実施形態である実施例2に係る半導体装置におけるIGBTチップの部分の要部レイアウト図である。また、図13は図12 E領域の鳥瞰図である。実施例1と同一構成の部分には同一符号を付して重複箇所の説明を省略する。
図14は、本発明の第3の実施形態である実施例3に係る半導体装置におけるIGBTチップの部分の要部レイアウト図である。また、図15は図14 F領域の鳥瞰図である。実施例1および実施例2と同一構成の部分には同一符号を付して重複箇所の説明を省略する。
本発明の半導体装置を電力変換装置に適用した実施形態の一例である実施例4について、以下、説明する。
102 セラミック基板上ゲート配線
103 セラミック基板上コレクタ配線
104 セラミック基板上エミッタ配線
105 IGBTチップ
106 Diodeチップ
107 導電部材
108 ボンディングワイヤー
109 セラミック基板上エミッタセンス配線
201 終端領域
202 第2ゲート配線
204 第2ゲート電極パッド
205 エミッタ電極
206 第1ゲート配線
401 焼結層
402 Niメッキ電極
403 終端部Alフィールドプレート
404 コンタクト
405 PWEL
406 ポリイミド
407 絶縁酸化膜
408 N-Si基板
409 P+コレクタ層
410 裏面コレクタ電極
411 Nバッファー層
501 トレンチゲート
502 終端部Alフィールドプレートコンタクト
503 最外周ゲート配線
504 アクティブ部内ゲート配線
505 第2ゲート配線接続コンタクト
506 エミッタ電極接続コンタクト
507 表面n+領域
508 表面p+領域
509 表面p領域
510 ゲート酸化膜
701 最外周第2ゲート配線コンタクト
801 アクティブ部内第2ゲート配線
1002 アクティブ部内第2ゲート配線コンタクト
1201 埋め込みゲート配線
1401 幅広トレンチ領域
1402 埋め込みゲート配線
1403 サイドウォールゲート
1404 PolySiフィールドプレート
1405 PolySiフィールドプレート上エミッタコンタクト
600 電力変換装置
601〜606 電力スイッチング素子
621〜626 ダイオード
611〜616 ゲート回路
Claims (10)
- 半導体チップと、
前記半導体チップの表面に形成された第1ゲート配線および第2ゲート配線と、
前記第1ゲート配線を覆うように配置されたエミッタ電極と、
前記エミッタ電極の上方に配置された焼結層と
を備え、
前記半導体チップの表面に、少なくとも前記エミッタ電極と前記焼結層とを含んで成る複数層構造が、エミッタ電極接続コンタクトとゲート配線領域とを含む範囲に亘って連続して存在する
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記複数層構造は、前記エミッタ電極と前記焼結層との間にニッケル(Ni)を含有成分とする電極層を備えて構成される
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体チップは、サイドゲート構造を有するゲートを備えて構成される
ことを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
前記サイドゲート構造は、前記ゲートがトレンチゲートであるトレンチゲート構造である
ことを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記第1ゲート配線は、前記トレンチゲートに接続されたトレンチ埋め込み型ゲート配線である
ことを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
前記サイドゲート構造は、前記ゲートがサイドウォールゲートであるサイドウォールゲート構造である
ことを特徴とする半導体装置。 - 請求項6に記載の半導体装置において、
前記第1ゲート配線は、前記サイドウォールゲートに接続された埋め込みサイドウォール型ゲート配線である
ことを特徴とする半導体装置。 - 請求項1乃至7のいずれか一項に記載の半導体装置において、
前記半導体チップは、共通のセラミック基板上のコレクタ配線に、ダイオードチップと共に、前記焼結層とは分離している他の焼結層で接合されている
ことを特徴とする半導体装置。 - 外部から直流電力を入力し、入力した前記直流電力を交流電力に変換して出力する電力変換装置であって、
前記直流電力を入力するための一対の直流端子と、
前記交流電力を出力するための交流端子であって前記交流電力に係る交流の相数と同数の交流端子と
を備え、
前記相数の前記交流端子の各々について、前記一対の直流端子の一方と他方との間に、スイッチング素子と該スイッチング素子とは逆極性のダイオードとが互いに並列接続されて成る並列回路が2個直列に接続された構成の直列回路が接続され、前記直列回路を構成する2個の前記並列回路の相互接続点が、該直列回路に対応する相の前記交流端子に接続された構成を更に備え、
前記並列回路が請求項1乃至7のいずれか一項に記載の半導体装置で構成される
ことを特徴とする電力変換装置。 - 請求項9に記載の電力変換装置において、
前記スイッチング素子は、前記半導体チップで構成され、
前記ダイオードは、共通のセラミック基板上のコレクタ配線に、前記半導体チップと共に、前記焼結層とは分離している他の焼結層で接合されているダイオードチップで構成される
ことを特徴とする電力変換装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2017007161A JP6726112B2 (ja) | 2017-01-19 | 2017-01-19 | 半導体装置および電力変換装置 |
CN201780083838.3A CN110192284B (zh) | 2017-01-19 | 2017-12-25 | 半导体装置和电力变换装置 |
US16/465,429 US10763346B2 (en) | 2017-01-19 | 2017-12-25 | Semiconductor device and power conversion apparatus |
PCT/JP2017/046299 WO2018135239A1 (ja) | 2017-01-19 | 2017-12-25 | 半導体装置および電力変換装置 |
EP17892804.0A EP3573107A4 (en) | 2017-01-19 | 2017-12-25 | SEMICONDUCTOR COMPONENT AND POWER CONVERSION DEVICE |
TW107101766A TWI638461B (zh) | 2017-01-19 | 2018-01-18 | 半導體裝置及電力變換裝置 |
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JP2017007161A JP6726112B2 (ja) | 2017-01-19 | 2017-01-19 | 半導体装置および電力変換装置 |
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JP2021150407A (ja) * | 2020-03-17 | 2021-09-27 | 富士電機株式会社 | 炭化珪素半導体装置 |
JP2021190639A (ja) * | 2020-06-03 | 2021-12-13 | 三菱電機株式会社 | 半導体装置 |
WO2022249803A1 (ja) * | 2021-05-27 | 2022-12-01 | 株式会社デンソー | 半導体装置 |
WO2024062845A1 (ja) * | 2022-09-21 | 2024-03-28 | 株式会社デンソー | 半導体装置 |
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JP7075847B2 (ja) * | 2018-08-28 | 2022-05-26 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
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Also Published As
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WO2018135239A1 (ja) | 2018-07-26 |
JP6726112B2 (ja) | 2020-07-22 |
TW201828480A (zh) | 2018-08-01 |
US10763346B2 (en) | 2020-09-01 |
EP3573107A4 (en) | 2020-07-01 |
CN110192284A (zh) | 2019-08-30 |
CN110192284B (zh) | 2022-06-03 |
EP3573107A1 (en) | 2019-11-27 |
TWI638461B (zh) | 2018-10-11 |
US20200006301A1 (en) | 2020-01-02 |
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