GB2150754B - Semiconductor device electrodes - Google Patents
Semiconductor device electrodesInfo
- Publication number
- GB2150754B GB2150754B GB8430310A GB8430310A GB2150754B GB 2150754 B GB2150754 B GB 2150754B GB 8430310 A GB8430310 A GB 8430310A GB 8430310 A GB8430310 A GB 8430310A GB 2150754 B GB2150754 B GB 2150754B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- device electrodes
- solderable
- strips
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
- H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58228043A JPS60119777A (ja) | 1983-11-30 | 1983-11-30 | ゲ−トタ−ンオフサイリスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8430310D0 GB8430310D0 (en) | 1985-01-09 |
| GB2150754A GB2150754A (en) | 1985-07-03 |
| GB2150754B true GB2150754B (en) | 1987-08-26 |
Family
ID=16870300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8430310A Expired GB2150754B (en) | 1983-11-30 | 1984-11-30 | Semiconductor device electrodes |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS60119777A (enExample) |
| DE (2) | DE3448379C2 (enExample) |
| GB (1) | GB2150754B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4073876B2 (ja) * | 2004-01-14 | 2008-04-09 | 三菱電機株式会社 | 半導体装置 |
| JP5396436B2 (ja) * | 2011-06-29 | 2014-01-22 | 日立オートモティブシステムズ株式会社 | 半導体装置ならびに半導体装置の製造方法 |
| US9583425B2 (en) * | 2012-02-15 | 2017-02-28 | Maxim Integrated Products, Inc. | Solder fatigue arrest for wafer level package |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105526B (de) * | 1959-12-29 | 1961-04-27 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
| DE1214978B (de) * | 1963-06-11 | 1966-04-21 | Licentia Gmbh | Verfahren zum Anloeten einer Goldfolie an eine vernickelte Molybdaenscheibe |
| DE1283970B (de) * | 1966-03-19 | 1968-11-28 | Siemens Ag | Metallischer Kontakt an einem Halbleiterbauelement |
| GB1149606A (en) * | 1967-02-27 | 1969-04-23 | Motorola Inc | Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses |
| GB1196834A (en) * | 1967-03-29 | 1970-07-01 | Hitachi Ltd | Improvement of Electrode Structure in a Semiconductor Device. |
| GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
| US3599060A (en) * | 1968-11-25 | 1971-08-10 | Gen Electric | A multilayer metal contact for semiconductor device |
| GB1557399A (en) * | 1976-04-09 | 1979-12-12 | Int Rectifier Corp | Gate controlled semiconductor device |
| IT1075077B (it) * | 1977-03-08 | 1985-04-22 | Ates Componenti Elettron | Metodo pr realizzare contatti su semiconduttori |
| US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
| JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
| GB2095904B (en) * | 1981-03-23 | 1985-11-27 | Gen Electric | Semiconductor device with built-up low resistance contact and laterally conducting second contact |
| JPS5830147A (ja) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | 半導体装置 |
| JPS59121871A (ja) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | 半導体装置 |
| DE3301666A1 (de) * | 1983-01-20 | 1984-07-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung |
-
1983
- 1983-11-30 JP JP58228043A patent/JPS60119777A/ja active Pending
-
1984
- 1984-11-30 DE DE19843448379 patent/DE3448379C2/de not_active Expired - Fee Related
- 1984-11-30 GB GB8430310A patent/GB2150754B/en not_active Expired
- 1984-11-30 DE DE19843443784 patent/DE3443784A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3443784A1 (de) | 1985-07-18 |
| DE3443784C2 (enExample) | 1991-10-10 |
| JPS60119777A (ja) | 1985-06-27 |
| DE3448379C2 (de) | 1993-12-16 |
| GB2150754A (en) | 1985-07-03 |
| GB8430310D0 (en) | 1985-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19951026 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19961130 |