GB2150754B - Semiconductor device electrodes - Google Patents

Semiconductor device electrodes

Info

Publication number
GB2150754B
GB2150754B GB8430310A GB8430310A GB2150754B GB 2150754 B GB2150754 B GB 2150754B GB 8430310 A GB8430310 A GB 8430310A GB 8430310 A GB8430310 A GB 8430310A GB 2150754 B GB2150754 B GB 2150754B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device electrodes
solderable
strips
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8430310A
Other languages
English (en)
Other versions
GB2150754A (en
GB8430310D0 (en
Inventor
Kozo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8430310D0 publication Critical patent/GB8430310D0/en
Publication of GB2150754A publication Critical patent/GB2150754A/en
Application granted granted Critical
Publication of GB2150754B publication Critical patent/GB2150754B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
GB8430310A 1983-11-30 1984-11-30 Semiconductor device electrodes Expired GB2150754B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58228043A JPS60119777A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Publications (3)

Publication Number Publication Date
GB8430310D0 GB8430310D0 (en) 1985-01-09
GB2150754A GB2150754A (en) 1985-07-03
GB2150754B true GB2150754B (en) 1987-08-26

Family

ID=16870300

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8430310A Expired GB2150754B (en) 1983-11-30 1984-11-30 Semiconductor device electrodes

Country Status (3)

Country Link
JP (1) JPS60119777A (enExample)
DE (2) DE3448379C2 (enExample)
GB (1) GB2150754B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073876B2 (ja) * 2004-01-14 2008-04-09 三菱電機株式会社 半導体装置
JP5396436B2 (ja) * 2011-06-29 2014-01-22 日立オートモティブシステムズ株式会社 半導体装置ならびに半導体装置の製造方法
US9583425B2 (en) * 2012-02-15 2017-02-28 Maxim Integrated Products, Inc. Solder fatigue arrest for wafer level package

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105526B (de) * 1959-12-29 1961-04-27 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1214978B (de) * 1963-06-11 1966-04-21 Licentia Gmbh Verfahren zum Anloeten einer Goldfolie an eine vernickelte Molybdaenscheibe
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
GB1149606A (en) * 1967-02-27 1969-04-23 Motorola Inc Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
GB1196834A (en) * 1967-03-29 1970-07-01 Hitachi Ltd Improvement of Electrode Structure in a Semiconductor Device.
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device
GB1557399A (en) * 1976-04-09 1979-12-12 Int Rectifier Corp Gate controlled semiconductor device
IT1075077B (it) * 1977-03-08 1985-04-22 Ates Componenti Elettron Metodo pr realizzare contatti su semiconduttori
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPS5830147A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 半導体装置
JPS59121871A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 半導体装置
DE3301666A1 (de) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung

Also Published As

Publication number Publication date
DE3443784A1 (de) 1985-07-18
DE3443784C2 (enExample) 1991-10-10
JPS60119777A (ja) 1985-06-27
DE3448379C2 (de) 1993-12-16
GB2150754A (en) 1985-07-03
GB8430310D0 (en) 1985-01-09

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19951026

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19961130