JP7099027B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 68
- 239000000919 ceramic Substances 0.000 claims description 57
- 239000012212 insulator Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 6
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
- H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7819—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
- H01L29/782—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Power Conversion In General (AREA)
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2005-228851号公報
Claims (12)
- トランジスタ素子と、
SiC基板に形成され、前記トランジスタ素子と逆並列接続されたダイオード素子と、
前記トランジスタ素子のゲートに電気的に接続されており、抵抗温度係数が±150×10-6/K以内である抵抗素子と、を備える
半導体装置。 - 前記抵抗素子が、セラミックを含む材料で形成された抵抗体を有するセラミック抵抗素子である
請求項1に記載の半導体装置。 - 前記トランジスタ素子、前記SiC基板に形成された前記ダイオード素子、および前記セラミック抵抗素子は、回路基板の載置面に載置されており、
前記セラミック抵抗素子は、
前記回路基板の前記載置面に載置される第1電極と、
前記回路基板とは逆側において前記第1電極と対向して配置されている第2電極と、を備えており、
前記抵抗体は、前記第1電極と前記第2電極との間に設けられており、前記第1電極と前記第2電極との間に電気的に接続されており、
前記トランジスタ素子の前記ゲートと前記第2電極とがワイヤによって電気的に接続されている
請求項2に記載の半導体装置。 - 前記第1電極と前記第2電極との間において、前記抵抗体の周囲にはセラミック絶縁体が設けられている
請求項3に記載の半導体装置。 - 前記抵抗体と前記第1電極との間の前記セラミック絶縁体の厚みは、前記抵抗体と前記第2電極との間の前記セラミック絶縁体の厚みより大きい
請求項4に記載の半導体装置。 - 前記第2電極の厚みは、前記第1電極の厚みより大きい
請求項3から5の何れか一項に記載の半導体装置。 - 前記第1電極の底面に対して直交方向から見た前記第1電極の輪郭は、丸みを帯びた角部を含んでいる
請求項3から6の何れか一項に記載の半導体装置。 - 前記回路基板の前記載置面には凹部が設けられており、
前記セラミック抵抗素子は、前記凹部に載置される
請求項3から7の何れか一項に記載の半導体装置。 - 前記抵抗体は、第1抵抗体と、前記第1抵抗体を挟むように配置された第2抵抗体および第3抵抗体とを少なくとも含み、
前記第1抵抗体、前記第2抵抗体、および前記第3抵抗体は、互いに長手方向の部分が対向するように配置されており、
前記第1抵抗体の一端と、前記第2抵抗体の端部のうち前記第1抵抗体の前記一端に隣接する端部とが電気的に接続されており、
前記第1抵抗体の前記一端と反対側の他端と、前記第3抵抗体の端部のうち前記第1抵抗体の前記他端と隣接する端部とが電気的に接続されており、
前記第1抵抗体、前記第2抵抗体、および前記第3抵抗体は、互いに電気的に直列に接続されている
請求項3から8の何れか一項に記載の半導体装置。 - 前記第1抵抗体、前記第2抵抗体、および前記第3抵抗体は、前記第1電極と平行な面に沿って配置されている
請求項9に記載の半導体装置。 - 前記第1抵抗体、前記第2抵抗体、および前記第3抵抗体は、前記第1電極の上方において、前記第1電極に交わる方向にセラミック絶縁体を介して積層されており、
前記セラミック絶縁体に設けられたビアを通して、前記第1抵抗体と前記第2抵抗体との間、および前記第1抵抗体と前記第3抵抗体との間が電気的に接続されている
請求項9に記載の半導体装置。 - 前記セラミック抵抗素子は、
複数の抵抗体と、
複数のトランジスタにおける各ゲートに電気的に接続されるように互いに分離された複数の第2電極を含んでおり、
複数の抵抗体は、一つの前記第1電極に共通に電気的に接続され、
複数の抵抗体は、互いに分離された前記第2電極にそれぞれ電気的に接続されている
請求項3から11の何れか一項に記載の半導体装置。
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JP2018080564A JP7099027B2 (ja) | 2018-04-19 | 2018-04-19 | 半導体装置 |
US16/285,202 US11121240B2 (en) | 2018-04-19 | 2019-02-26 | Semiconductor device |
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JP2018080564A JP7099027B2 (ja) | 2018-04-19 | 2018-04-19 | 半導体装置 |
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JP7099027B2 true JP7099027B2 (ja) | 2022-07-12 |
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JPWO2021192035A1 (ja) * | 2020-03-24 | 2021-09-30 | ||
CN115702499A (zh) * | 2020-06-29 | 2023-02-14 | 索尼半导体解决方案公司 | 半导体装置及其制造方法 |
JP2022038159A (ja) | 2020-08-26 | 2022-03-10 | 富士電機株式会社 | 半導体モジュール |
WO2022259646A1 (ja) * | 2021-06-10 | 2022-12-15 | 富士電機株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007189040A (ja) | 2006-01-13 | 2007-07-26 | Alps Electric Co Ltd | 抵抗体ペースト、抵抗体、及び前記抵抗体を用いた回路基板 |
WO2014128950A1 (ja) | 2013-02-25 | 2014-08-28 | 株式会社 日立製作所 | 半導体装置および半導体回路の駆動装置ならびに電力変換装置 |
US20150364468A1 (en) | 2014-06-16 | 2015-12-17 | Infineon Technologies Ag | Discrete Semiconductor Transistor |
WO2016103431A1 (ja) | 2014-12-26 | 2016-06-30 | 株式会社日立製作所 | 半導体モジュールおよびそれを搭載した電力変換装置 |
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JP2839551B2 (ja) * | 1989-05-29 | 1998-12-16 | 株式会社日立製作所 | 抵抗組成物、これを用いた回路基板及び電子装置 |
JPH0518127A (ja) | 1991-07-12 | 1993-01-26 | Masayoshi Takeno | 駐車装置 |
JPH07320904A (ja) * | 1994-05-20 | 1995-12-08 | Fujitsu Ltd | 厚膜混成集積回路 |
JP3476612B2 (ja) * | 1995-12-21 | 2003-12-10 | 三菱電機株式会社 | 半導体装置 |
JP2003319638A (ja) | 2002-04-18 | 2003-11-07 | Nissan Motor Co Ltd | 半導体素子のゲート駆動回路 |
JP2005228851A (ja) | 2004-02-12 | 2005-08-25 | Mitsubishi Electric Corp | Igbtモジュール |
JP5423275B2 (ja) * | 2009-09-17 | 2014-02-19 | 富士ゼロックス株式会社 | 発光素子 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007189040A (ja) | 2006-01-13 | 2007-07-26 | Alps Electric Co Ltd | 抵抗体ペースト、抵抗体、及び前記抵抗体を用いた回路基板 |
WO2014128950A1 (ja) | 2013-02-25 | 2014-08-28 | 株式会社 日立製作所 | 半導体装置および半導体回路の駆動装置ならびに電力変換装置 |
US20150364468A1 (en) | 2014-06-16 | 2015-12-17 | Infineon Technologies Ag | Discrete Semiconductor Transistor |
WO2016103431A1 (ja) | 2014-12-26 | 2016-06-30 | 株式会社日立製作所 | 半導体モジュールおよびそれを搭載した電力変換装置 |
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