JPS60113460A - ダイナミックメモリ素子の製造方法 - Google Patents
ダイナミックメモリ素子の製造方法Info
- Publication number
- JPS60113460A JPS60113460A JP58220515A JP22051583A JPS60113460A JP S60113460 A JPS60113460 A JP S60113460A JP 58220515 A JP58220515 A JP 58220515A JP 22051583 A JP22051583 A JP 22051583A JP S60113460 A JPS60113460 A JP S60113460A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- oxide film
- capacitor
- substrate
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220515A JPS60113460A (ja) | 1983-11-25 | 1983-11-25 | ダイナミックメモリ素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220515A JPS60113460A (ja) | 1983-11-25 | 1983-11-25 | ダイナミックメモリ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60113460A true JPS60113460A (ja) | 1985-06-19 |
| JPH0347588B2 JPH0347588B2 (en, 2012) | 1991-07-19 |
Family
ID=16752224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58220515A Granted JPS60113460A (ja) | 1983-11-25 | 1983-11-25 | ダイナミックメモリ素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60113460A (en, 2012) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60200565A (ja) * | 1984-03-26 | 1985-10-11 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS63104371A (ja) * | 1986-10-22 | 1988-05-09 | Oki Electric Ind Co Ltd | 半導体メモリの製造方法 |
| US5084746A (en) * | 1986-01-30 | 1992-01-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
| US5182227A (en) * | 1986-04-25 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| US5214496A (en) * | 1982-11-04 | 1993-05-25 | Hitachi, Ltd. | Semiconductor memory |
| US5343354A (en) * | 1992-06-11 | 1994-08-30 | Samsung Electronics Co., Ltd. | Stacked trench capacitor and a method for making the same |
| US6028346A (en) * | 1986-04-25 | 2000-02-22 | Mitsubishi Denki Kabushiki Kaisha | Isolated trench semiconductor device |
| JP2006216880A (ja) * | 2005-02-07 | 2006-08-17 | Nec Electronics Corp | 半導体装置およびその製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643171U (en, 2012) * | 1979-09-10 | 1981-04-20 | ||
| JPS583260A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | 竪型埋め込みキヤパシタ |
| JPS58213460A (ja) * | 1982-06-07 | 1983-12-12 | Nec Corp | 半導体集積回路装置 |
| JPS59191373A (ja) * | 1983-04-15 | 1984-10-30 | Hitachi Ltd | 半導体集積回路装置 |
-
1983
- 1983-11-25 JP JP58220515A patent/JPS60113460A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643171U (en, 2012) * | 1979-09-10 | 1981-04-20 | ||
| JPS583260A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | 竪型埋め込みキヤパシタ |
| JPS58213460A (ja) * | 1982-06-07 | 1983-12-12 | Nec Corp | 半導体集積回路装置 |
| JPS59191373A (ja) * | 1983-04-15 | 1984-10-30 | Hitachi Ltd | 半導体集積回路装置 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214496A (en) * | 1982-11-04 | 1993-05-25 | Hitachi, Ltd. | Semiconductor memory |
| JPS60200565A (ja) * | 1984-03-26 | 1985-10-11 | Hitachi Ltd | 半導体装置の製造方法 |
| US5084746A (en) * | 1986-01-30 | 1992-01-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
| US5182227A (en) * | 1986-04-25 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| US6028346A (en) * | 1986-04-25 | 2000-02-22 | Mitsubishi Denki Kabushiki Kaisha | Isolated trench semiconductor device |
| JPS63104371A (ja) * | 1986-10-22 | 1988-05-09 | Oki Electric Ind Co Ltd | 半導体メモリの製造方法 |
| US5343354A (en) * | 1992-06-11 | 1994-08-30 | Samsung Electronics Co., Ltd. | Stacked trench capacitor and a method for making the same |
| JP2006216880A (ja) * | 2005-02-07 | 2006-08-17 | Nec Electronics Corp | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0347588B2 (en, 2012) | 1991-07-19 |
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