JPS60103614A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60103614A
JPS60103614A JP58210985A JP21098583A JPS60103614A JP S60103614 A JPS60103614 A JP S60103614A JP 58210985 A JP58210985 A JP 58210985A JP 21098583 A JP21098583 A JP 21098583A JP S60103614 A JPS60103614 A JP S60103614A
Authority
JP
Japan
Prior art keywords
resist
layer
resist layer
layers
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58210985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0469411B2 (enExample
Inventor
Hitoshi Tsuji
均 辻
Chiharu Kato
千晴 加藤
Hiroshi Ishitani
浩 石谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58210985A priority Critical patent/JPS60103614A/ja
Publication of JPS60103614A publication Critical patent/JPS60103614A/ja
Publication of JPH0469411B2 publication Critical patent/JPH0469411B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58210985A 1983-11-11 1983-11-11 半導体装置の製造方法 Granted JPS60103614A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58210985A JPS60103614A (ja) 1983-11-11 1983-11-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58210985A JPS60103614A (ja) 1983-11-11 1983-11-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60103614A true JPS60103614A (ja) 1985-06-07
JPH0469411B2 JPH0469411B2 (enExample) 1992-11-06

Family

ID=16598398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58210985A Granted JPS60103614A (ja) 1983-11-11 1983-11-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60103614A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108500A (ja) * 2004-10-07 2006-04-20 Shin Etsu Polymer Co Ltd 導電パターンの形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204532A (ja) * 1982-05-24 1983-11-29 Hitachi Ltd パタ−ン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204532A (ja) * 1982-05-24 1983-11-29 Hitachi Ltd パタ−ン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108500A (ja) * 2004-10-07 2006-04-20 Shin Etsu Polymer Co Ltd 導電パターンの形成方法

Also Published As

Publication number Publication date
JPH0469411B2 (enExample) 1992-11-06

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