JPS5972759A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5972759A
JPS5972759A JP57184324A JP18432482A JPS5972759A JP S5972759 A JPS5972759 A JP S5972759A JP 57184324 A JP57184324 A JP 57184324A JP 18432482 A JP18432482 A JP 18432482A JP S5972759 A JPS5972759 A JP S5972759A
Authority
JP
Japan
Prior art keywords
source
channel transistor
drain
drain region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57184324A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05865B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazuhiko Hashimoto
一彦 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57184324A priority Critical patent/JPS5972759A/ja
Publication of JPS5972759A publication Critical patent/JPS5972759A/ja
Publication of JPH05865B2 publication Critical patent/JPH05865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57184324A 1982-10-20 1982-10-20 半導体装置の製造方法 Granted JPS5972759A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57184324A JPS5972759A (ja) 1982-10-20 1982-10-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57184324A JPS5972759A (ja) 1982-10-20 1982-10-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5972759A true JPS5972759A (ja) 1984-04-24
JPH05865B2 JPH05865B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-01-06

Family

ID=16151331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57184324A Granted JPS5972759A (ja) 1982-10-20 1982-10-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5972759A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210660A (ja) * 1983-02-23 1984-11-29 テキサス・インスツルメンツ・インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
JPS60241256A (ja) * 1984-05-16 1985-11-30 Hitachi Ltd 半導体装置およびその製造方法
JPS61133656A (ja) * 1984-12-03 1986-06-20 Hitachi Ltd 半導体装置およびその製造方法
JPS61182254A (ja) * 1985-02-08 1986-08-14 Hitachi Ltd 半導体集積回路装置の製造方法
US4717684A (en) * 1985-02-01 1988-01-05 Hitachi, Ltd. Semiconductor integrated circuit device
JPS63263759A (ja) * 1987-04-22 1988-10-31 Nec Corp Ｍｏｓ型半導体装置の製造方法
JPS642349A (en) * 1987-06-24 1989-01-06 Nec Corp Manufacture of complementary mos field-effect transistor
JPS6454764A (en) * 1987-06-11 1989-03-02 Gen Electric Manufacture of metal oxde semiconductor device
JPS6484746A (en) * 1987-09-28 1989-03-30 Ricoh Kk Semiconductor device
JPH02291166A (ja) * 1989-05-01 1990-11-30 Takehide Shirato 半導体装置及びその製造方法
US5436484A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having input protective elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57133678A (en) * 1980-12-23 1982-08-18 Philips Nv Method of producing semiconductor device
JPS57192063A (en) * 1981-05-20 1982-11-26 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57133678A (en) * 1980-12-23 1982-08-18 Philips Nv Method of producing semiconductor device
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57192063A (en) * 1981-05-20 1982-11-26 Fujitsu Ltd Manufacture of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210660A (ja) * 1983-02-23 1984-11-29 テキサス・インスツルメンツ・インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
US5436484A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having input protective elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US5436483A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit
JPS60241256A (ja) * 1984-05-16 1985-11-30 Hitachi Ltd 半導体装置およびその製造方法
JPS61133656A (ja) * 1984-12-03 1986-06-20 Hitachi Ltd 半導体装置およびその製造方法
US4717684A (en) * 1985-02-01 1988-01-05 Hitachi, Ltd. Semiconductor integrated circuit device
JPS61182254A (ja) * 1985-02-08 1986-08-14 Hitachi Ltd 半導体集積回路装置の製造方法
JPS63263759A (ja) * 1987-04-22 1988-10-31 Nec Corp Ｍｏｓ型半導体装置の製造方法
JPS6454764A (en) * 1987-06-11 1989-03-02 Gen Electric Manufacture of metal oxde semiconductor device
JPS642349A (en) * 1987-06-24 1989-01-06 Nec Corp Manufacture of complementary mos field-effect transistor
JPS6484746A (en) * 1987-09-28 1989-03-30 Ricoh Kk Semiconductor device
JPH02291166A (ja) * 1989-05-01 1990-11-30 Takehide Shirato 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH05865B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-01-06

Similar Documents

Publication Publication Date Title
US4345366A (en) Self-aligned all-n+ polysilicon CMOS process
JPH05299594A (ja) 相補型ｍｉｓトランジスタ装置
JPS5972759A (ja) 半導体装置の製造方法
JPH07142565A (ja) 半導体装置及びその製造方法
JPH0712058B2 (ja) 半導体装置およびその製造方法
US5674770A (en) Method of fabricating an SRAM device with a self-aligned thin film transistor structure
JPH0228939A (ja) Ｍｏｓ型トランジスタ
US6291284B1 (en) Method of fabricating semiconductor device
JP2000068499A (ja) 半導体装置とその製造方法
JPH07263690A (ja) サリサイド構造を有する半導体装置とその製造方法
JP3051445B2 (ja) 半導体薄膜トランジスタおよびその製造方法
JPH11312741A (ja) 半導体装置及びその製造方法
JP2892415B2 (ja) 半導体素子の製造方法
JPH0479336A (ja) 半導体装置の製造方法
JPH08288504A (ja) 半導体装置の製造方法
JP3168676B2 (ja) 相補型ｍｉｓトランジスタ装置及びその製造方法
JP2845955B2 (ja) Ｍｏｓ型半導体装置の製造方法
JP3521921B2 (ja) 半導体装置の製造方法
JPH02219237A (ja) Ｍｉｓ型半導体装置
JPS6039868A (ja) 半導体装置の製造方法
JPH01143358A (ja) Ｍｏｓ型半導体集積回路装置の製造方法
JPH0226034A (ja) 半導体装置の製造方法
JPS6254959A (ja) Ｍｉｓ型半導体装置の製造方法
JPH0458562A (ja) Ｍｏｓ型トランジスタ及びその製造方法
KR19990075468A (ko) 모스 트랜지스터 제조방법