JPS5966131A - 半導体ペレツトの取付け構造 - Google Patents

半導体ペレツトの取付け構造

Info

Publication number
JPS5966131A
JPS5966131A JP57177062A JP17706282A JPS5966131A JP S5966131 A JPS5966131 A JP S5966131A JP 57177062 A JP57177062 A JP 57177062A JP 17706282 A JP17706282 A JP 17706282A JP S5966131 A JPS5966131 A JP S5966131A
Authority
JP
Japan
Prior art keywords
pellet
solder
semiconductor pellet
thin plate
mounting structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57177062A
Other languages
English (en)
Inventor
Takashi Yamazaki
山崎　孝志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57177062A priority Critical patent/JPS5966131A/ja
Publication of JPS5966131A publication Critical patent/JPS5966131A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051—Forming additional members, e.g. dam structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体ベレットの取付は構造に関する０最近、
半導体装置の信頼性向上に対する要求に高まる一万であ
り、そのため半導体ベレヴト業取付ける時にも槙々の悪
影響を避けるように工夫しなければならない。例えばリ
ードフレーム等のアイランド部にソルダーを用いてペレ
ｖトに搭載する時、ペレツトの側面を介してソルダーが
はい上かってくる現象が生じる。第１図は従来のリード
フレームアイランド近傍の構造を断面図で示すと、リー
ドフレームアイランド１上に印刷あるいはポツティング
されたソルダー２がｂかれ、このソルダー２の上にベレ
ット３が搭載される。この様な構造に於いては、ペレッ
トマウ／ト時の圧力の為に、ソルダーがベレット上には
い上がったり、側面に付着したりしてソルダーによるベ
レット汚染（短絡や電流リーグ４）等の問題が生じる口
特にソルダー中に混在している不純物の汚染に帰因する
耐湿性の不良がモールド封止後に顕著になってさ１辷。
また、ベレットの大型化に伴いこの欠点は如実に現われ
てくる。
本発明はこのベレット汚染を防止し几取付は構造を提供
する事を目的をする〇 本発明ではベレット接着剤の上にベレットより小さな窓
をもつ薄膜あるいは薄板をのせ、その上にベレットを載
置するようにした〇 そのために１ｍＪ記窓全通してベレットの裏面だけが接
着剤に従する構造となり、上記のはい上がりや側面付着
によるベレット汚染を簡単に防止できる。また、余分な
接着剤は薄膜あるいは薄板の外側にはみ出され、窓の部
分では均一に接着剤がベレットに付着し接着むらもなく
なる。とくにベレットが大型化しても全面に均一な接着
強度が得られる。
以下に本発明の一実施例を図面を用いて説明する。
第２図は本発明の一実施例の断面図であり、第３図はそ
の平面図である。第２図、第３図に於いて、１〜３は従
来の半導体装置（第１図）と同じであるが、ソルダー２
上１ｃＶｉ例えばエポキシ樹脂等で成形した薄板４が搭
載される。この薄板４１Ｃはベレットの底面より小さい
少なくとも１個以上の接触用ｇ５が設けられている。リ
ードフレームアイランド上に搭載されたかかる構造のベ
レツト３は、薄板４によって、ソルダー２のペレ、、、
ト上へはい上り、側面汚染？ｆ有効に防止できる０なお
、ソルダーの材質や薄板の拐質等は、導電性であろうと
絶縁性であろうと何等便用１７ｃｒｔ問題ない。更に、
リードフレーム以外の例えばプリント板や金属ヘッダ等
への取りＵけも間際に可能である。
【図面の簡単な説明】
第１図は従来の取付構造の断面図であり、１はリードフ
レームアイランド部、２はソルダー、３はベレットであ
る。 第２図、第３図ｆｉ′Ｘ発明の一実施例による取付構造
の断面図及び平面図であり、１はリードフレームアイラ
ンド部、２にソルダー、３はベレット１４はソルダー固
定用薄板、５Ｖｉ、ベレットとツルグーの接触を保つ為
にソルダー固定用薄板に設けられた窓である。

Claims (1)

    【特許請求の範囲】
  1. 半導体ペレット取付けのために用いる接着材の上に前記
    半導体ベレットエ９も小さい窓を有する薄膜あるいは薄
    板を設け、その上にＩＩ記半導体ペレットを搭載し７’
    （事を特徴とする半導体ベレットの取付は構造。
JP57177062A 1982-10-08 1982-10-08 半導体ペレツトの取付け構造 Pending JPS5966131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57177062A JPS5966131A (ja) 1982-10-08 1982-10-08 半導体ペレツトの取付け構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57177062A JPS5966131A (ja) 1982-10-08 1982-10-08 半導体ペレツトの取付け構造

Publications (1)

Publication Number Publication Date
JPS5966131A true JPS5966131A (ja) 1984-04-14

Family

ID=16024450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57177062A Pending JPS5966131A (ja) 1982-10-08 1982-10-08 半導体ペレツトの取付け構造

Country Status (1)

Country Link
JP (1) JPS5966131A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013117438A3 (de) * 2012-02-09 2013-10-03 Robert Bosch Gmbh Verbindungsanordnung eines elektrischen und/oder elektronischen bauelements

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013117438A3 (de) * 2012-02-09 2013-10-03 Robert Bosch Gmbh Verbindungsanordnung eines elektrischen und/oder elektronischen bauelements
EP2812912A2 (de) * 2012-02-09 2014-12-17 Robert Bosch GmbH Verbindungsanordnung eines elektrischen und/oder elektronischen bauelements
US9177934B2 (en) 2012-02-09 2015-11-03 Robert Bosch Gmbh Connection arrangement of an electric and/or electronic component

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