JPS59500436A - 電子ビ−ム／光学的ハイブリドリソグラフイツクレジスト法 - Google Patents

電子ビ−ム／光学的ハイブリドリソグラフイツクレジスト法

Info

Publication number
JPS59500436A
JPS59500436A JP50148583A JP50148583A JPS59500436A JP S59500436 A JPS59500436 A JP S59500436A JP 50148583 A JP50148583 A JP 50148583A JP 50148583 A JP50148583 A JP 50148583A JP S59500436 A JPS59500436 A JP S59500436A
Authority
JP
Japan
Prior art keywords
resist
layer
substrate
unexposed
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50148583A
Other languages
English (en)
Japanese (ja)
Inventor
ヘルバ−ト・ジヨン・エヌ
Original Assignee
モトロ−ラ・インコ−ポレ−テツド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モトロ−ラ・インコ−ポレ−テツド filed Critical モトロ−ラ・インコ−ポレ−テツド
Publication of JPS59500436A publication Critical patent/JPS59500436A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
JP50148583A 1982-03-29 1983-03-01 電子ビ−ム／光学的ハイブリドリソグラフイツクレジスト法 Pending JPS59500436A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36332482A 1982-03-29 1982-03-29
US363324DEEFR 1982-03-29

Publications (1)

Publication Number Publication Date
JPS59500436A true JPS59500436A (ja) 1984-03-15

Family

ID=23429755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50148583A Pending JPS59500436A (ja) 1982-03-29 1983-03-01 電子ビ−ム／光学的ハイブリドリソグラフイツクレジスト法

Country Status (3)

Country Link
EP (1) EP0104235A4 (fr)
JP (1) JPS59500436A (fr)
WO (1) WO1983003485A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717644A (en) * 1982-12-20 1988-01-05 International Business Machines Corporation Hybrid electron beam and optical lithography method
US4610948A (en) * 1984-01-25 1986-09-09 The United States Of America As Represented By The Secretary Of The Army Electron beam peripheral patterning of integrated circuits
WO1986000425A1 (fr) * 1984-06-29 1986-01-16 Motorola, Inc. Promoteur d'adherence et procede pour des surfaces d'oxyde de plasma
WO2006129374A1 (fr) * 2005-06-03 2006-12-07 Advantest Corporation Procédé de mise en motif
DE102005051972B4 (de) * 2005-10-31 2012-05-31 Infineon Technologies Ag Kombiniertes Elektronenstrahl- und optisches Lithographieverfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518084A (en) * 1967-01-09 1970-06-30 Ibm Method for etching an opening in an insulating layer without forming pinholes therein
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
JPS494851B1 (fr) * 1968-04-26 1974-02-04
US3549368A (en) * 1968-07-02 1970-12-22 Ibm Process for improving photoresist adhesion
US4103045A (en) * 1972-07-31 1978-07-25 Rhone-Poulenc, S.A. Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
JPS5772327A (en) * 1980-10-24 1982-05-06 Toshiba Corp Formation of resist pattern

Also Published As

Publication number Publication date
EP0104235A4 (fr) 1984-09-14
EP0104235A1 (fr) 1984-04-04
WO1983003485A1 (fr) 1983-10-13

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