JPS5941877A - フオトトランジスタ - Google Patents

フオトトランジスタ

Info

Publication number
JPS5941877A
JPS5941877A JP57151950A JP15195082A JPS5941877A JP S5941877 A JPS5941877 A JP S5941877A JP 57151950 A JP57151950 A JP 57151950A JP 15195082 A JP15195082 A JP 15195082A JP S5941877 A JPS5941877 A JP S5941877A
Authority
JP
Japan
Prior art keywords
base
region
emitter
phototransistor
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57151950A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0381312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57151950A priority Critical patent/JPS5941877A/ja
Priority to PCT/JP1983/000290 priority patent/WO1984001055A1/ja
Priority to EP83902822A priority patent/EP0116652B1/en
Priority to DE8383902822T priority patent/DE3381666D1/de
Priority to US06/903,890 priority patent/US4720735A/en
Publication of JPS5941877A publication Critical patent/JPS5941877A/ja
Publication of JPH0381312B2 publication Critical patent/JPH0381312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
JP57151950A 1982-08-31 1982-08-31 フオトトランジスタ Granted JPS5941877A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57151950A JPS5941877A (ja) 1982-08-31 1982-08-31 フオトトランジスタ
PCT/JP1983/000290 WO1984001055A1 (fr) 1982-08-31 1983-08-31 Phototransistor
EP83902822A EP0116652B1 (en) 1982-08-31 1983-08-31 Phototransistor
DE8383902822T DE3381666D1 (en) 1982-08-31 1983-08-31 Phototransistor.
US06/903,890 US4720735A (en) 1982-08-31 1983-08-31 Phototransistor having a non-homogeneously base region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57151950A JPS5941877A (ja) 1982-08-31 1982-08-31 フオトトランジスタ

Publications (2)

Publication Number Publication Date
JPS5941877A true JPS5941877A (ja) 1984-03-08
JPH0381312B2 JPH0381312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-27

Family

ID=15529742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57151950A Granted JPS5941877A (ja) 1982-08-31 1982-08-31 フオトトランジスタ

Country Status (5)

Country Link
US (1) US4720735A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0116652B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5941877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3381666D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1984001055A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016535A (ja) * 2006-07-04 2008-01-24 Opnext Japan Inc 面入射型受光素子および光受信モジュール

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IES20010616A2 (en) * 2001-06-28 2002-05-15 Nat Microelectronics Res Ct Microelectronic device and method of its manufacture
US8461624B2 (en) 2010-11-22 2013-06-11 Intel Corporation Monolithic three terminal photodetector
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732437A (en) * 1980-08-06 1982-02-22 Konishiroku Photo Ind Co Ltd Mirror unit of camera

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
FR2050630A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-06-19 1971-04-02 V Elektrotekhni
JPS526076B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-04-28 1977-02-18
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
US4086610A (en) * 1974-06-28 1978-04-25 Motorola, Inc. High reliability epi-base radiation hardened power transistor
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees
JPS5273A (en) * 1975-06-20 1977-01-05 Matsushita Electric Ind Co Ltd Washing machine
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
JPS525273A (en) * 1975-07-02 1977-01-14 Hitachi Ltd Transistor
JPS53124086A (en) * 1975-10-21 1978-10-30 Semiconductor Res Found Semiconductor device
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
DE2728845A1 (de) * 1977-06-27 1979-01-18 Siemens Ag Verfahren zum herstellen eines hochfrequenztransistors
US4151540A (en) * 1977-12-08 1979-04-24 Fairchild Camera And Instrument Corporation High beta, high frequency transistor structure
US4427990A (en) * 1978-07-14 1984-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter with insulated gate over p-n charge storage region
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
JPS5685848A (en) * 1979-12-15 1981-07-13 Toshiba Corp Manufacture of bipolar integrated circuit
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
US4381953A (en) * 1980-03-24 1983-05-03 International Business Machines Corporation Polysilicon-base self-aligned bipolar transistor process
JPS5895877A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 半導体光電変換装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732437A (en) * 1980-08-06 1982-02-22 Konishiroku Photo Ind Co Ltd Mirror unit of camera

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016535A (ja) * 2006-07-04 2008-01-24 Opnext Japan Inc 面入射型受光素子および光受信モジュール

Also Published As

Publication number Publication date
US4720735A (en) 1988-01-19
WO1984001055A1 (fr) 1984-03-15
DE3381666D1 (en) 1990-07-19
EP0116652A4 (en) 1986-09-04
EP0116652A1 (en) 1984-08-29
JPH0381312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-27
EP0116652B1 (en) 1990-06-13

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