FR2299727A1 - Thyristor a caracteristiques de commutation ameliorees - Google Patents

Thyristor a caracteristiques de commutation ameliorees

Info

Publication number
FR2299727A1
FR2299727A1 FR7502588A FR7502588A FR2299727A1 FR 2299727 A1 FR2299727 A1 FR 2299727A1 FR 7502588 A FR7502588 A FR 7502588A FR 7502588 A FR7502588 A FR 7502588A FR 2299727 A1 FR2299727 A1 FR 2299727A1
Authority
FR
France
Prior art keywords
grid
thyristor
semiconductor material
control layer
higher doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7502588A
Other languages
English (en)
Other versions
FR2299727B1 (fr
Inventor
Rene Barandon
Serge Lehmann
Michel Sassier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Priority to FR7502588A priority Critical patent/FR2299727A1/fr
Publication of FR2299727A1 publication Critical patent/FR2299727A1/fr
Application granted granted Critical
Publication of FR2299727B1 publication Critical patent/FR2299727B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR7502588A 1975-01-28 1975-01-28 Thyristor a caracteristiques de commutation ameliorees Granted FR2299727A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7502588A FR2299727A1 (fr) 1975-01-28 1975-01-28 Thyristor a caracteristiques de commutation ameliorees

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7502588A FR2299727A1 (fr) 1975-01-28 1975-01-28 Thyristor a caracteristiques de commutation ameliorees

Publications (2)

Publication Number Publication Date
FR2299727A1 true FR2299727A1 (fr) 1976-08-27
FR2299727B1 FR2299727B1 (fr) 1977-07-15

Family

ID=9150398

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7502588A Granted FR2299727A1 (fr) 1975-01-28 1975-01-28 Thyristor a caracteristiques de commutation ameliorees

Country Status (1)

Country Link
FR (1) FR2299727A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356278A1 (fr) * 1976-06-21 1978-01-20 Gen Electric Thyristor commande par champ et a structure de grille ensevelie
US4177478A (en) * 1977-01-10 1979-12-04 Alsthom-Atlantique Amplifying gate thyristor with gate turn-off (G.T.O.)
EP0008535A2 (fr) * 1978-08-18 1980-03-05 Kabushiki Kaisha Meidensha Dispositif semiconducteur commandé par une gâchette
US4291325A (en) * 1979-01-29 1981-09-22 Kabushiki Kaisha Meidensha Dual gate controlled thyristor with highly doped cathode base grid covered with high resistivity base layer
EP0064561A1 (fr) * 1980-11-21 1982-11-17 Zaidan Hozin Handotai Kenkyu Shinkokai Tiristor d'induction statique
EP0116651A1 (fr) * 1982-08-30 1984-08-29 NISHIZAWA, Junichi Photothyristor
EP0116652A1 (fr) * 1982-08-31 1984-08-29 NISHIZAWA, Junichi Phototransistor
EP0165419A2 (fr) * 1984-05-29 1985-12-27 Kabushiki Kaisha Meidensha Dispositif de commutation à semi-conducteur comportant une structure de gâchette enterrée
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations
US4618781A (en) * 1978-06-13 1986-10-21 Licentia Patent-Verwaltungs-G.M.B.H. Gate turn-off thyristor construction

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803935A1 (de) * 1967-10-20 1969-10-02 Ckd Praha Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
DE2233786A1 (de) * 1972-01-24 1974-01-31 Licentia Gmbh Thyristor mit erhoehter ein- und durchschaltgeschwindigkeit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803935A1 (de) * 1967-10-20 1969-10-02 Ckd Praha Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
DE2233786A1 (de) * 1972-01-24 1974-01-31 Licentia Gmbh Thyristor mit erhoehter ein- und durchschaltgeschwindigkeit

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356278A1 (fr) * 1976-06-21 1978-01-20 Gen Electric Thyristor commande par champ et a structure de grille ensevelie
US4177478A (en) * 1977-01-10 1979-12-04 Alsthom-Atlantique Amplifying gate thyristor with gate turn-off (G.T.O.)
US4618781A (en) * 1978-06-13 1986-10-21 Licentia Patent-Verwaltungs-G.M.B.H. Gate turn-off thyristor construction
EP0008535A2 (fr) * 1978-08-18 1980-03-05 Kabushiki Kaisha Meidensha Dispositif semiconducteur commandé par une gâchette
EP0008535A3 (en) * 1978-08-18 1980-03-19 Kabushiki Kaisha Meidensha A gate controlled semiconductor device
US4291325A (en) * 1979-01-29 1981-09-22 Kabushiki Kaisha Meidensha Dual gate controlled thyristor with highly doped cathode base grid covered with high resistivity base layer
EP0064561A4 (fr) * 1980-11-21 1984-02-03 Zaidan Hojin Handotai Kenkyu Tiristor d'induction statique.
EP0064561A1 (fr) * 1980-11-21 1982-11-17 Zaidan Hozin Handotai Kenkyu Shinkokai Tiristor d'induction statique
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations
EP0116651A1 (fr) * 1982-08-30 1984-08-29 NISHIZAWA, Junichi Photothyristor
EP0116651A4 (fr) * 1982-08-30 1986-07-23 Jun-Ichi Nishizawa Photothyristor.
EP0116652A1 (fr) * 1982-08-31 1984-08-29 NISHIZAWA, Junichi Phototransistor
EP0116652A4 (fr) * 1982-08-31 1986-09-04 Jun-Ichi Nishizawa Phototransistor.
EP0165419A2 (fr) * 1984-05-29 1985-12-27 Kabushiki Kaisha Meidensha Dispositif de commutation à semi-conducteur comportant une structure de gâchette enterrée
EP0165419A3 (en) * 1984-05-29 1988-01-20 Kabushiki Kaisha Meidensha Buried-gate structure-type semiconductor switching device

Also Published As

Publication number Publication date
FR2299727B1 (fr) 1977-07-15

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