JPS53124086A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53124086A
JPS53124086A JP12699375A JP12699375A JPS53124086A JP S53124086 A JPS53124086 A JP S53124086A JP 12699375 A JP12699375 A JP 12699375A JP 12699375 A JP12699375 A JP 12699375A JP S53124086 A JPS53124086 A JP S53124086A
Authority
JP
Japan
Prior art keywords
semiconductor device
base
decrease
concentration region
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12699375A
Other languages
Japanese (ja)
Other versions
JPS6124832B2 (en
Inventor
Junichi Nishizawa
Kentaro Nakamura
Takashi Kiregawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP12699375A priority Critical patent/JPS53124086A/en
Publication of JPS53124086A publication Critical patent/JPS53124086A/en
Publication of JPS6124832B2 publication Critical patent/JPS6124832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To decrease the distribution capacity by locating the impurity high-concentration region in the base to the low-concentration side adhacent to the base, and alsoto decrease the lateral resistance by changing the shape of the high-concentration region of the base width. Thus, a semiconductor device is obtained, which is capable of a high-speed and a large-power operation as well as the DC breaking.
JP12699375A 1975-10-21 1975-10-21 Semiconductor device Granted JPS53124086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12699375A JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12699375A JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8981881A Division JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53124086A true JPS53124086A (en) 1978-10-30
JPS6124832B2 JPS6124832B2 (en) 1986-06-12

Family

ID=14948990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12699375A Granted JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53124086A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc High power silicon switching transistor - has wide emitter fingers and orthogonal narrow low resistivity fingers buried in base region
JPS5940576A (en) * 1982-08-30 1984-03-06 Junichi Nishizawa Photo thyristor
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
JPH028057U (en) * 1989-06-15 1990-01-18
JPH02187034A (en) * 1989-01-13 1990-07-23 Nec Corp Bipolar transistor
JPH0718457U (en) * 1993-12-03 1995-03-31 潤一 西澤 Photo thyristor
JP2012244054A (en) * 2011-05-23 2012-12-10 Shindengen Electric Mfg Co Ltd Thyristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4977585A (en) * 1972-11-29 1974-07-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4977585A (en) * 1972-11-29 1974-07-26

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc High power silicon switching transistor - has wide emitter fingers and orthogonal narrow low resistivity fingers buried in base region
JPS5940576A (en) * 1982-08-30 1984-03-06 Junichi Nishizawa Photo thyristor
WO1984001054A1 (en) * 1982-08-30 1984-03-15 Nishizawa Junichi Photothyristor
US4841350A (en) * 1982-08-30 1989-06-20 Nishizawa Junichi Static induction photothyristor having a non-homogeneously doped gate
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
JPH02187034A (en) * 1989-01-13 1990-07-23 Nec Corp Bipolar transistor
JP2800218B2 (en) * 1989-01-13 1998-09-21 日本電気株式会社 Bipolar transistor
JPH028057U (en) * 1989-06-15 1990-01-18
JPH0718457U (en) * 1993-12-03 1995-03-31 潤一 西澤 Photo thyristor
JP2012244054A (en) * 2011-05-23 2012-12-10 Shindengen Electric Mfg Co Ltd Thyristor

Also Published As

Publication number Publication date
JPS6124832B2 (en) 1986-06-12

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Legal Events

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Effective date: 20041018

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Effective date: 20041028