JPS5941877A - Phototransistor - Google Patents
PhototransistorInfo
- Publication number
- JPS5941877A JPS5941877A JP57151950A JP15195082A JPS5941877A JP S5941877 A JPS5941877 A JP S5941877A JP 57151950 A JP57151950 A JP 57151950A JP 15195082 A JP15195082 A JP 15195082A JP S5941877 A JPS5941877 A JP S5941877A
- Authority
- JP
- Japan
- Prior art keywords
- base
- region
- emitter
- phototransistor
- impurity density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 34
- 239000000969 carrier Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 238000003486 chemical etching Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
本発明はフォトトランジスタに係り、特に高速で高感度
な半導体装置に関する。従来のバイポーラ構造のｐ−ｎ
−ｐないしはｎ−ｐｎ 構造のフォトトランジスタは、
ベース抵抗が大きく、又コレクタ・ベース容量、エミッ
タ・ベース容量が大きい為に、感度が悪く。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a phototransistor, and particularly to a high-speed and highly sensitive semiconductor device. Conventional bipolar structure p-n
A phototransistor with a -p or n-pn structure is
Sensitivity is poor due to large base resistance, collector-base capacitance, and emitter-base capacitance.
又高速でないという欠点を有している。It also has the disadvantage of not being fast.
第１図は従来のバイポーラフォトトランジスタの一例で
あり、４はエミッタ電極、１はエミッタ領域、５はベー
ス電極、２はベース領域、６はコレクタ電極、３はコレ
クタ領域である。１ｏは先入力を示している。ベース電
極５はフローティングにする場合もある。FIG. 1 shows an example of a conventional bipolar phototransistor, in which 4 is an emitter electrode, 1 is an emitter region, 5 is a base electrode, 2 is a base region, 6 is a collector electrode, and 3 is a collector region. 1o indicates first input. The base electrode 5 may be floating.
７はＳ ｔ Ｏｘ膜等の絶縁物である。7 is an insulator such as an StOx film.
この例に示される様にバイポーラフォトトランジスタは
、ベース領域２の部分において引き出し抵抗Ｒ２がベー
スｆＶ谷が低いこと及び幅が狭いことにより大きく、か
つその他の抵抗分もあるのでこれらの抵抗分を含め抵抗
値が非常に大きいものである。As shown in this example, in the bipolar phototransistor, the extraction resistance R2 in the base region 2 is large due to the low base fV valley and narrow width, and there are also other resistance components, so these resistance components are included. The resistance value is extremely large.
ｎ−ｐ−ｎ構造のフォトトランジスタの電子電流密度△
Ｉｎの全電流密度に対する比つまり電流増幅率△１．／
Ｉは次式で与えられる。Electron current density △ of phototransistor with npn structure
The ratio of In to the total current density, that is, the current amplification factor △1. /
I is given by the following formula.
ここてり、、、Ｄ、は電子、正孔の拡散係数、Ｌｐは正
孔の拡散長、Ｗｔはベース厚み、ｎ、はエミッタの不純
物密度、 Ｐｈはベースの不純物密度である。Here, D is the diffusion coefficient of electrons and holes, Lp is the diffusion length of holes, Wt is the base thickness, n is the impurity density of the emitter, and Ph is the impurity density of the base.
（１）式はちょうどエミッタ接合の注入比重。Equation (1) is just the injection specific gravity of the emitter junction.
／■Ｐであり、注入率の大きいトランジスタ程電流増幅
率が太き（なるということである電流増幅率を高めるた
めには、エミ・ンタの不純物密度を高くシ、ベースの不
純物密度を低くすること、ベースの厚みを薄くすること
が考えられるが、ベースの不純物密度を下げ、ベースの
厚みを薄くすることは、ベース抵抗が大きくなり）第１
・トランジスタとして望ましくない。／■P, and the higher the implantation rate of a transistor, the higher the current amplification factor. However, lowering the impurity density of the base and reducing the base thickness will increase the base resistance).
・Undesirable as a transistor.
次にフォトトランジスタの動作速度を考えてみると、立
上り、立下りの時定数は概路次ここで＋φ、６はベース
・エミッタ間の拡散電位である。時定数はＬｐ／Ｄ、を
小さくすれば小さくなるが、（１）式より電流増幅率は
低下する。ベースの厚みＷｂを小さくすると時定数は小
さくなり、電流増幅率は増大する。十φ、ｂはベースと
エミッタの不純物密度で決まる拡散電位で小さくすれば
時定数は小さくなる。Next, considering the operating speed of a phototransistor, the time constants for rising and falling are roughly as follows: +φ, 6 is the diffusion potential between the base and emitter. Although the time constant becomes smaller by reducing Lp/D, the current amplification factor decreases according to equation (1). When the base thickness Wb is reduced, the time constant becomes smaller and the current amplification factor increases. The time constant will become smaller if 0φ and b are made smaller by the diffusion potential determined by the impurity density of the base and emitter.
＋φ、ｂはｎｌまたはＰｂを小さくすれば小さくなるが
、電流増幅率が小さくならないためには、 Ｐ６を小さ
くすれば良い。+φ, b can be reduced by reducing nl or Pb, but in order to prevent the current amplification factor from becoming small, P6 should be reduced.
以上のことから従来のバイポーラトランジスタのフォト
トランジスタは、電流増幅度を大きくして速度を早くす
るためには結局ベース厚みＷｈを薄くして、ベースの不
純物密度を下げるしかない。しかしこれは前述のよう１
こ、ベース抵抗を増し、性能の限界値が存在し、極めて
不満足な結果しか得られない。現在光検出の素子として
は、ｐ−１ｚ−ｎフォトダイオード、アバランシェフォ
トダイオード等が良く用いられているが、二端子のダイ
オードでは１次段とのアイソレーションがよくない等の
欠点がある。又アバランシェフォトダイオードは比較的
高電圧（数十Ｖ）を要し、また雑音が大きいという大き
な欠点をも有している。From the above, in order to increase the current amplification degree and increase the speed of the conventional bipolar phototransistor, the only option is to reduce the base thickness Wh and lower the impurity density of the base. However, as mentioned above, this
This increases the base resistance, there is a performance limit, and very unsatisfactory results are obtained. Currently, p-1z-n photodiodes, avalanche photodiodes, and the like are often used as photodetecting elements, but two-terminal diodes have drawbacks such as poor isolation from the primary stage. Furthermore, the avalanche photodiode requires a relatively high voltage (several tens of volts) and also has major drawbacks of high noise.
本発明の目的は、叙上の従来のバイポーラのフォトトラ
ンジスタの欠点をなくした新規な高感度で高速なフォト
トランジスタを提供することにある。An object of the present invention is to provide a novel high-sensitivity, high-speed phototransistor that eliminates the drawbacks of the conventional bipolar phototransistors mentioned above.
以下本発明を図面を参照して詳細に説明をする。高感度
、高速なフォトトランジスタを得るためには、ベース抵
抗を減らすと共に。The present invention will be explained in detail below with reference to the drawings. In order to obtain a high-sensitivity, high-speed phototransistor, we need to reduce the base resistance.
ベースまわりの容量を減らす必要がある。It is necessary to reduce the capacity around the base.
本発明ではベース抵抗を減少させる為に。In the present invention, in order to reduce the base resistance.
ベース不純物密度を全体に均一ではなく所要のある領域
に限って多量にするとベース抵抗を非常に小さくできる
事を利用するものである。ベースの不純物密度の低い領
域はエミッタからの少数キャリアが流入し易いようにす
る。これは前述のベースの不純物密度の高い領域はエミ
ッタとの拡散電位φ、ｂか前述のベース領域の不純物密
度の低い領域とエミッタする。前記の二つにわかれたベ
ース領域は互に電気的に接続されていることになり、実
効的なベース抵抗は減少する。This method takes advantage of the fact that the base resistance can be made extremely small by making the base impurity density not uniform over the entire area but only in a certain area. The low impurity density region of the base allows minority carriers from the emitter to easily flow into it. This means that the region of the base with high impurity density has a diffusion potential φ,b with the emitter or emitters with the region of the base region with low impurity density. The two divided base regions are electrically connected to each other, and the effective base resistance is reduced.
光が照射されると、生成した電子・正孔対のうち正孔は
不純物密度の高いベース領域に蓄積され、電子は不純物
密度の低いベース領域を通過してコレクタのｎ領域へ流
れる。正孔はベース領域で、不純物密度の高い領域を正
に充電させ、ベース・エミッタ間の拡散電位φａｂを△
Ｖ６ｂだけ下げるからエミッタから多くの自由電子がベ
ース領域の不純物密度の低い方へ流れこみ易くなり、（
１）式から明らかなように、光による電流増幅率は通常
のパイボーラフＡ１〜トランジスタよりも非常に大きく
なる。When irradiated with light, holes of the generated electron-hole pairs are accumulated in the base region with high impurity density, and electrons flow to the n region of the collector through the base region with low impurity density. The holes positively charge the region with high impurity density in the base region, increasing the base-emitter diffusion potential φab.
Since V6b is lowered, many free electrons from the emitter tend to flow into the base region where the impurity density is lower, (
As is clear from equation 1), the current amplification factor due to light is much larger than that of the normal pievorous A1 transistor.
第２ 図＋ａｌは本発明のフォトトランジスタの半導体
装置の一実施例である。まず構造について説明すると、
１１はｎ型の高不純物密度のエミッタ領域、１２はｎ型
の比較的低不純物密度なエミッタ領域、１３はｎ型の比
較的低不純物密度なコレクタ領域、１４はｎ型の高不純
物密度なコレクタ領域、１５はエミッタ電極、１７はコ
レクタ電極、１８は表面保護膜で８１０２等の絶縁膜で
ある。FIG. 2+al shows an embodiment of the phototransistor semiconductor device of the present invention. First, let me explain the structure.
11 is an n-type emitter region with high impurity density, 12 is an n-type emitter region with relatively low impurity density, 13 is an n-type collector region with relatively low impurity density, and 14 is an n-type collector with high impurity density. 15 is an emitter electrode, 17 is a collector electrode, and 18 is a surface protection film, which is an insulating film such as 8102.
１６はベース電極である。ベース領域はエミッタとコレ
クタの間の領域で、ｐ型の高不純物密度な領域２０とｐ
型紙不純物密度な領域２１よりなり、かつ高不純物密度
領域２０の幾何学的形状は低不純物密度領域２１よりも
大きく形成している。16 is a base electrode. The base region is a region between the emitter and the collector, and includes a p-type high impurity density region 20 and a p-type region 20 with high impurity density.
The high impurity density region 20 has a geometrical shape larger than the low impurity density region 21 .
動作について説明すると、このよう１こベース領域を形
成することによって、前述したように光入力１０が照射
されたとき、正孔は高−ス領域２１を通して行なわれる
ことにより光に対する電流増幅率は大きくなり、又高不
純物密度なベース領域２０によりベース抵抗は単に低不
純物密度なベース領域２１て形成されているよりも非常
に小さくなるので、スイッチング時間も非常ｔこ短くな
るという特徴を有する。更にエミッタｅベース間、ベー
ス・コレクタ間に比較的低不純物密度な領域をそう人し
、ていることから、エミッタ・ベース間容量、及びベー
ス・コレクタ間の容量が減少するので、スイッチング特
性が更に向上することに寄与している。To explain the operation, by forming one base region in this way, when the optical input 10 is irradiated as described above, holes are conducted through the high-space region 21, so that the current amplification factor for light is large. Furthermore, since the base region 20 with high impurity density makes the base resistance much smaller than if it were simply formed with the base region 21 with low impurity density, the switching time is also very short. Furthermore, since there are regions with relatively low impurity density between the emitter and base and between the base and collector, the capacitance between the emitter and base and the capacitance between the base and collector are reduced, which further improves the switching characteristics. It contributes to the improvement of
以上の説明から本発明のフォトトランジスタはベース抵
抗が減少すること、エミッタからの注入効率が高いこと
、ベース・エミッタ間容量及びベース・コレクタ間の容
ｎ１が小さいことから、高感度で高速なフォトトランジ
スタを実現できる。From the above explanation, the phototransistor of the present invention has a reduced base resistance, high injection efficiency from the emitter, and small base-emitter capacitance and base-collector capacitance n1. A transistor can be realized.
第２図ｔｂ＋乃至（（１）は別の実施例でベースの形状
を変えたものである。第２図ｆｂｌはベース・エミッタ
接合は平らで、ベース・コレクタ接１゜金側ヘベースの
ｐ＋領領域突出させている。第２図＋ＣＩは、第２図（
＋））とは逆にベースのｐ４領域をエミッタ側へ突出さ
せている。第２図ｆｄｌはベースの厚みを均一にした実
施例である。Figure 2 tb+ to ((1) are different embodiments in which the shape of the base is changed. In Figure 2 fbl, the base-emitter junction is flat, and the p+ region of the base is 1° to the gold side of the base-collector contact. The area is projected. Figure 2 + CI is shown in Figure 2 (
+))), the p4 region of the base is made to protrude toward the emitter side. FIG. 2 fdl is an embodiment in which the base thickness is made uniform.
第２図（ａｌに示すフォトトランジスタは次のようにし
て製造される。Ｓｉのｎ゛基板１×ｅ−３
１０ｃｍシ１．Ｊ：、）上に、５ｉｃｔ！ｔ とＨ２ガ
スによは算つ竺シ
り気相成長法により、１３の高抵抗なｎ−眉を１０μｎ
２エピタキシヤル成長させる。次にＳ型の高抵抗層Ｘ２
を３μｍ程度成長させる。The phototransistor shown in FIG. 2 (al) is manufactured as follows: 5 ict! Using t and H2 gas, 13 high-resistance n-brows were deposited at 10 μn using the vapor phase epitaxy method.
2. Epitaxial growth. Next, S-type high resistance layer X2
is grown to a thickness of about 3 μm.
エピタキ／ヤル成長時に不純物密度の低いｐ率
層は形成される。Ｓ ｘ Ｏｚ膜による選択拡散法−ス
のｐ３領域まで化学エツチングを施してｐｌのベース領
域を露出させる。酸化をして、ベース、エミッタの電極
領域をマスク法により露出させ、高真空中でＡ／を両面
に蒸着する。表面はＡＪの選択エツチングを施すことに
より、エミッタｖベース電極を形成する。裏面はコレク
タ電極となる。A p-rate layer with a low impurity density is formed during epitaxial/dial growth. Selective diffusion method using S x Oz film - Chemical etching is performed down to the p3 region of the base to expose the base region of pl. After oxidation, the base and emitter electrode regions are exposed by a mask method, and A/ is deposited on both sides in a high vacuum. The surface is subjected to AJ selective etching to form an emitter v-base electrode. The back surface becomes the collector electrode.
ベースのｐ＋領領域エミッタのｎ＋領領域格子歪が生じ
ないように格子歪みを緩和する為に第■族の７元素を添
加する方法を採用することが望ましい。キャリアの寿命
が短いと、エミッタからコレクタへの到達率か落ちるの
で。It is desirable to adopt a method of doping seven elements of group Ⅰ in order to alleviate lattice distortion so that lattice distortion does not occur in the n+ region of the emitter of the p+ region of the base. If the carrier life is short, the rate of arrival from the emitter to the collector decreases.
キラーとなる重金属の混入は、極力防ぐ必要があり、製
造工程の最終段階で１重金属のゲッタリングを施した方
が良い。ベースのｐへ形成は、イオン注入法あるいはボ
ロンドープの多結晶シリコンを拡散源とする方法等にょ
り実理てきる。It is necessary to prevent the contamination of heavy metals, which are killers, as much as possible, and it is better to perform gettering with one heavy metal at the final stage of the manufacturing process. Formation of the base p layer can be accomplished by ion implantation or a method using boron-doped polycrystalline silicon as a diffusion source.
第３図（ａ）〜（Ｃ）は本発明の更に別の実施例である
。エミッタからの注入効率を高める為にベースの低不純
物密度領域を高抵抗なｐ−領域、２４，２５．２６はそ
れぞれエミッタ、ベース、コレクタ電極である。ベース
抵抗を下げる為にベース電極は各々配線している。FIGS. 3(a) to 3(C) show yet another embodiment of the present invention. In order to improve injection efficiency from the emitter, the low impurity density region of the base is a high resistance p- region, and 24, 25 and 26 are emitter, base and collector electrodes, respectively. Each base electrode is wired to lower the base resistance.
第３図（ｂ）は、ベース壷エミッタ間のブレーク電圧の
向上、エミッタ・ベース間の容量の減少、及び光の照射
面積を増すために、ベースの高不純物密度なｐＪＪｊ域
まで堀下げた構造の実施例である。ｐ＋のベース領域ま
での堀下げは、化学エツチング、結晶の異方性を利用し
た化学エツチング、Ｓｉの窒化膜と酸化膜による方法、
あるいはプラズマエツチング等の方法により形成できる
。Figure 3(b) shows a structure in which the base is dug down to the pJJj region with high impurity density in order to improve the break voltage between the base and emitter, reduce the emitter-base capacitance, and increase the light irradiation area. This is an example. The trench down to the p+ base region can be done by chemical etching, chemical etching using crystal anisotropy, method using Si nitride film and oxide film,
Alternatively, it can be formed by a method such as plasma etching.
フォトトランジスタを多数個並べたフォトトランジスタ
の上面図であって、ベース、エミッタの電極を櫛形の配
線パターンとした実施例である。FIG. 2 is a top view of a phototransistor in which a large number of phototransistors are arranged, and is an example in which the base and emitter electrodes have a comb-shaped wiring pattern.
第４図ｆａｔ、ｆｂｌは本発明のフォトトランジスタの
使用法を示す実施例である。＋ａｌはエミッタ接地、（
ｂ）はベース接地の例である。FIG. 4 fat and fbl are examples showing how to use the phototransistor of the present invention. +al is emitter grounded, (
b) is an example of base grounding.
３０は本発明の第２図乃至は第３図に示すフォトトラン
ジスタ、３１はベース電極に接続された可変の外部ベー
ス抵抗、３２はベース・エミッタ電源、３３はコレクタ
の負荷抵抗ＲＬ、３４はコレクタ・エミッタ電源、３５
は出力端子、１ｏは光入力を示している。30 is a phototransistor shown in FIGS. 2 and 3 of the present invention, 31 is a variable external base resistor connected to the base electrode, 32 is a base-emitter power supply, 33 is a collector load resistance RL, and 34 is a collector・Emitter power supply, 35
indicates an output terminal, and 1o indicates an optical input.
本発明のフォトトランジスタはベース抵抗を極力下げる
構造を有している為に、ベース電極に接続されたベース
可変抵抗３１により、非常に広範囲にわたって、実効的
なベース抵抗を調節できることによって、光検出回路の
要求に応じて、ベース可変抵抗３１を設定できるという
従来のバイポーラフォトトランジスタにはない特徴を有
している。第４図（ｂｌは第４図（Ｑｌのエミッタ接地
に対して、ベース接地とした場合の本発明の実施例であ
る。Since the phototransistor of the present invention has a structure that lowers the base resistance as much as possible, the effective base resistance can be adjusted over a very wide range by the base variable resistor 31 connected to the base electrode. It has a feature not found in conventional bipolar phototransistors in that the base variable resistor 31 can be set according to the requirements of the bipolar phototransistor. FIG. 4 (bl is an embodiment of the present invention in which the base is grounded in contrast to the emitter grounding of FIG. 4 (Q1).
第５図ｔａ＋ 、 ｆｂｌ 、 ｉｃｌはそれぞれ、ベ
ース、エミッタ、コレクタ電極にコンデンサを接続した
本発明のフォトトランジスタの実施例を示す。フォトト
ランジスタ３０の各電極にコンデンサ４１．．４２．４
３を接続することにより１本発明のフォトトランジスタ
は光入力１０による光信号を、各電極に接続されたコン
デンサに蓄積することができる。このような機能を有す
る第５図に示す実施例のフォトトランジスタは、１トラ
ンジスタ／１ピクセル方式の光情報のランダムアクセス
イメージセンサ、光情報の記憶機能を有する各種のイメ
ージセンサに応用できることになるのはいうまでもない
。FIG. 5 ta+, fbl, and icl show examples of phototransistors of the present invention in which capacitors are connected to the base, emitter, and collector electrodes, respectively. A capacitor 41 is connected to each electrode of the phototransistor 30. ．． 42.4
By connecting 3, the phototransistor of the present invention can store an optical signal from the optical input 10 in a capacitor connected to each electrode. The phototransistor of the embodiment shown in FIG. 5 having such a function can be applied to a 1-transistor/1-pixel optical information random access image sensor and various image sensors having an optical information storage function. Needless to say.
第６ 図ｆａｔ 、 ＋１）ｌは１本発明のフォトトラ
ンジスタのベースにコンデンサ４１と抵抗５１を接続し
た本発明の一実例である。ベースのコンデンサによるＣ
Ｒ時定数により、フォトトランジスタとしての機能は拡
大する。FIG. 6 shows an example of the present invention in which a capacitor 41 and a resistor 51 are connected to the base of a phototransistor according to the present invention. C due to base capacitor
The function as a phototransistor is expanded by the R time constant.
第７図伸）乃至ｆｄｌは更にエミッタ、コレクタにＣ−
２時定数を有する実施例である。Figure 7) to fdl are further connected to the emitter and collector.
This is an example having two time constants.
本発明のフォトトランジスタは反対導電型のｐ” −ｐ
−−ｎ＋−ｎ−−ｐ＋にもできることは勿論である。The phototransistor of the present invention is of the opposite conductivity type p"-p
--n+-n--p+ can of course be used.
本発明のフォトトランジスタは材料は８１に限らずＧｅ
、ないしはＩＩＩ−Ｖ族の化合物半導体であるＧ ａ
Ａ ｓ 、 Ｇ ａ Ｐ 、 Ａ 、ｅ Ａ ｓ 、
Ｉｎｐあるいはそれらの混晶であるＧ ａ ＋−ｘ
Ａ ＬＡｓ等でも良いし、 ｎ−Ｖｌ族の化合物半導体
であっても良い。The material of the phototransistor of the present invention is not limited to 81 but also Ge.
, or Ga which is a III-V compound semiconductor
A s , G a P , A , e A s ,
Inp or their mixed crystal G a +−x
It may be ALAs or the like, or it may be an n-Vl group compound semiconductor.
本発明の目的とするところは、ベース抵抗を極力下げて
、エミッタがらベースを通過して、コレクタへの注入効
率を増したことを特徴とするフォトトランジスタであっ
て、従来のバイポーラフォトトランジスタにはない新規
なバイポーラフォトトランジスタを提供し、有用なもの
である。The object of the present invention is to provide a phototransistor characterized by lowering the base resistance as much as possible and increasing injection efficiency from the emitter to the base and into the collector, which is different from conventional bipolar phototransistors. The present invention provides a new and useful bipolar phototransistor.
第１図は従来型バイポーラフォトトランジスタの断面概
略図、第２図ｆａｔ乃至（ｄｌはベースの構造を種々番
こ変えた本発明実施例の断面構造図、第３図（ａｌ乃至
ｔＣ）は本発明の別な実施例、第４図（ａ）及びｆｂｌ
はエミッタ接地及びベース接地による本発明の実施例の
動作回路例、第５図（ａｌ乃至ｆｃｌはベース、エミッ
タ、コレクタにコンデンサをつけた本発明光トランジス
タ実施例の動（′１回路例、第６図ｆａ＋及びｆｂｌは
ベース電極に外部からコンデンサと抵抗の直列及び並列
回路を接続して機能を増大させた動作回路例、第７図＋
ａ＋乃至ｆｄ＋はエミッタ及びコレクタに外部から抵抗
とコンデンサの直列乃至は並列回路を接続した動作回路
例である。
第１ 図
１θ
＜−６−’）
つ２つ
／θ
＜Ｃ）
０
第２窃Fig. 1 is a schematic cross-sectional diagram of a conventional bipolar phototransistor, Fig. 2 fat to (dl) are cross-sectional structural diagrams of embodiments of the present invention in which the base structure is variously changed, and Fig. 3 (al to tC) is a schematic cross-sectional diagram of a conventional bipolar phototransistor. Another embodiment of the invention, FIG. 4(a) and fbl
5 is an operational circuit example of an embodiment of the present invention with a common emitter and a common base. Figure 6 fa+ and fbl are examples of operating circuits in which the functions are increased by connecting a series and parallel circuit of a capacitor and a resistor from the outside to the base electrode, Figure 7 +
a+ to fd+ are examples of operating circuits in which a series or parallel circuit of a resistor and a capacitor is connected to the emitter and collector from the outside. 1st Figure 1θ <-6-') 2/θ <C) 0 2nd theft
Claims (1)
ジスタにおいて、ベース部分の不純物−密度に不均一を
つけ、該ベースの不純物密度の大きなところに少数キャ
リアを蓄積させ、該ベースの不純物密度の小さいところ
は多数キャリアか抜は易いよう１こして１両者の電圧が
互いに結合せしめてなることを特徴としたフォトトラン
ジスタ。 ′（２） ベース近傍のエミッタ、
コレクタ側の低不純物な領域の伝導型が反転している前
記特許請求の範囲第一項記載のフォトトランジスタ。(1) In a transistor consisting of an emitter, a collector, and a base, the impurity density in the base portion is made non-uniform, so that minority carriers are accumulated in areas where the impurity density is high in the base, and many carriers are accumulated in areas where the impurity density is low in the base. A phototransistor characterized in that both voltages are coupled to each other so that carriers can be easily removed. ′(2) Emitter near the base,
The phototransistor according to claim 1, wherein the conductivity type of the low impurity region on the collector side is inverted.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57151950A JPS5941877A (en) | 1982-08-31 | 1982-08-31 | Phototransistor |
| DE8383902822T DE3381666D1 (en) | 1982-08-31 | 1983-08-31 | Phototransistor. |
| EP83902822A EP0116652B1 (en) | 1982-08-31 | 1983-08-31 | Phototransistor |
| PCT/JP1983/000290 WO1984001055A1 (en) | 1982-08-31 | 1983-08-31 | Phototransistor |
| US06/903,890 US4720735A (en) | 1982-08-31 | 1983-08-31 | Phototransistor having a non-homogeneously base region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57151950A JPS5941877A (en) | 1982-08-31 | 1982-08-31 | Phototransistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5941877A true JPS5941877A (en) | 1984-03-08 |
| JPH0381312B2 JPH0381312B2 (en) | 1991-12-27 |
Family
ID=15529742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57151950A Granted JPS5941877A (en) | 1982-08-31 | 1982-08-31 | Phototransistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4720735A (en) |
| EP (1) | EP0116652B1 (en) |
| JP (1) | JPS5941877A (en) |
| DE (1) | DE3381666D1 (en) |
| WO (1) | WO1984001055A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008016535A (en) * | 2006-07-04 | 2008-01-24 | Opnext Japan Inc | Surface-incident light receiving element and light-receiving module |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IES20010616A2 (en) * | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
| CN108039363A (en) * | 2017-11-30 | 2018-05-15 | 电子科技大学 | Optical drive SiC/GaN based semiconductor devices and its manufacture craft |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5732437A (en) * | 1980-08-06 | 1982-02-22 | Konishiroku Photo Ind Co Ltd | Mirror unit of camera |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3409812A (en) * | 1965-11-12 | 1968-11-05 | Hughes Aircraft Co | Space-charge-limited current triode device |
| US3532945A (en) * | 1967-08-30 | 1970-10-06 | Fairchild Camera Instr Co | Semiconductor devices having a low capacitance junction |
| FR2050630A5 (en) * | 1969-06-19 | 1971-04-02 | V Elektrotekhni | |
| JPS526076B1 (en) * | 1971-04-28 | 1977-02-18 | ||
| GB1502165A (en) * | 1974-04-10 | 1978-02-22 | Sony Corp | Semiconductor devices |
| US4086610A (en) * | 1974-06-28 | 1978-04-25 | Motorola, Inc. | High reliability epi-base radiation hardened power transistor |
| FR2299727A1 (en) * | 1975-01-28 | 1976-08-27 | Alsthom Cgee | Quick release switching thyristor - with grid of similar semiconductor material and higher doping over control layer |
| JPS5273A (en) * | 1975-06-20 | 1977-01-05 | Matsushita Electric Ind Co Ltd | Washing machine |
| US4178190A (en) * | 1975-06-30 | 1979-12-11 | Rca Corporation | Method of making a bipolar transistor with high-low emitter impurity concentration |
| JPS525273A (en) * | 1975-07-02 | 1977-01-14 | Hitachi Ltd | Transistor |
| JPS53124086A (en) * | 1975-10-21 | 1978-10-30 | Semiconductor Res Found | Semiconductor device |
| US4047217A (en) * | 1976-04-12 | 1977-09-06 | Fairchild Camera And Instrument Corporation | High-gain, high-voltage transistor for linear integrated circuits |
| DE2728845A1 (en) * | 1977-06-27 | 1979-01-18 | Siemens Ag | METHOD OF MANUFACTURING A HIGH FREQUENCY TRANSISTOR |
| US4151540A (en) * | 1977-12-08 | 1979-04-24 | Fairchild Camera And Instrument Corporation | High beta, high frequency transistor structure |
| US4427990A (en) * | 1978-07-14 | 1984-01-24 | Zaidan Hojin Handotai Kenkyu Shinkokai | Semiconductor photo-electric converter with insulated gate over p-n charge storage region |
| JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
| US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
| JPS5685848A (en) * | 1979-12-15 | 1981-07-13 | Toshiba Corp | Manufacture of bipolar integrated circuit |
| JPS5946103B2 (en) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | transistor |
| US4381953A (en) * | 1980-03-24 | 1983-05-03 | International Business Machines Corporation | Polysilicon-base self-aligned bipolar transistor process |
| JPS5895877A (en) * | 1981-12-01 | 1983-06-07 | Semiconductor Res Found | Semiconductor photoelectric transducer device |
-
1982
- 1982-08-31 JP JP57151950A patent/JPS5941877A/en active Granted
-
1983
- 1983-08-31 WO PCT/JP1983/000290 patent/WO1984001055A1/en active IP Right Grant
- 1983-08-31 US US06/903,890 patent/US4720735A/en not_active Expired - Lifetime
- 1983-08-31 DE DE8383902822T patent/DE3381666D1/en not_active Expired - Lifetime
- 1983-08-31 EP EP83902822A patent/EP0116652B1/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5732437A (en) * | 1980-08-06 | 1982-02-22 | Konishiroku Photo Ind Co Ltd | Mirror unit of camera |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008016535A (en) * | 2006-07-04 | 2008-01-24 | Opnext Japan Inc | Surface-incident light receiving element and light-receiving module |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3381666D1 (en) | 1990-07-19 |
| WO1984001055A1 (en) | 1984-03-15 |
| US4720735A (en) | 1988-01-19 |
| JPH0381312B2 (en) | 1991-12-27 |
| EP0116652B1 (en) | 1990-06-13 |
| EP0116652A4 (en) | 1986-09-04 |
| EP0116652A1 (en) | 1984-08-29 |
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