JPS5930709A - 炭素膜及び／又は炭素粒子の製造方法 - Google Patents
炭素膜及び／又は炭素粒子の製造方法Info
- Publication number
- JPS5930709A JPS5930709A JP57141559A JP14155982A JPS5930709A JP S5930709 A JPS5930709 A JP S5930709A JP 57141559 A JP57141559 A JP 57141559A JP 14155982 A JP14155982 A JP 14155982A JP S5930709 A JPS5930709 A JP S5930709A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- vapor phase
- gas
- atoms
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000012808 vapor phase Substances 0.000 title claims abstract description 16
- 230000002194 synthesizing effect Effects 0.000 title description 3
- 239000008187 granular material Substances 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 39
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 19
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 17
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 16
- 239000010432 diamond Substances 0.000 claims abstract description 16
- 125000005843 halogen group Chemical group 0.000 claims abstract description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 25
- 239000002994 raw material Substances 0.000 claims description 10
- 239000012071 phase Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims 1
- 238000010891 electric arc Methods 0.000 claims 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 19
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 150000001721 carbon Chemical class 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 5
- 229910052734 helium Inorganic materials 0.000 abstract description 2
- 229910052754 neon Inorganic materials 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- -1 heptanyl compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- RZBWTXBONGMUNG-UHFFFAOYSA-N cyclohexane;hydrofluoride Chemical compound F.C1CCCCC1 RZBWTXBONGMUNG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- RPUCEXCNSJXOMV-UHFFFAOYSA-N ethane hydrofluoride Chemical compound F.CC RPUCEXCNSJXOMV-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Combustion & Propulsion (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141559A JPS5930709A (ja) | 1982-08-13 | 1982-08-13 | 炭素膜及び／又は炭素粒子の製造方法 |
| US06/765,573 US4873115A (en) | 1982-08-13 | 1985-08-14 | Method of sythesizing carbon film and carbon particles in a vapor phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141559A JPS5930709A (ja) | 1982-08-13 | 1982-08-13 | 炭素膜及び／又は炭素粒子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5930709A true JPS5930709A (ja) | 1984-02-18 |
| JPH0333641B2 JPH0333641B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-05-17 |
Family
ID=15294779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57141559A Granted JPS5930709A (ja) | 1982-08-13 | 1982-08-13 | 炭素膜及び／又は炭素粒子の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4873115A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| JP (1) | JPS5930709A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
| JPS60261143A (ja) * | 1984-06-07 | 1985-12-24 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6270295A (ja) * | 1985-09-24 | 1987-03-31 | Sumitomo Electric Ind Ltd | ｎ型半導体ダイヤモンド膜の製造法 |
| JPS62278193A (ja) * | 1986-05-26 | 1987-12-03 | Kobe Steel Ltd | 結晶性炭素の気相合成法 |
| JPS62278192A (ja) * | 1986-05-26 | 1987-12-03 | Kobe Steel Ltd | 結晶性炭素の気相合成法 |
| JPS6433096A (en) * | 1987-04-03 | 1989-02-02 | Fujitsu Ltd | Gaseous phase synthesis for diamond |
| JPS6442313A (en) * | 1987-08-10 | 1989-02-14 | Semiconductor Energy Lab | Production of carbon |
| JPH01313393A (ja) * | 1988-06-10 | 1989-12-18 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| US5238888A (en) * | 1989-10-02 | 1993-08-24 | Kuraray Chemical Co., Ltd. | Carbon molecular sieve |
| US5391409A (en) * | 1991-04-01 | 1995-02-21 | Sumitomo Electric Industries, Ltd. | Low temperature method for synthesizing diamond with high quality by vapor phase deposition |
| US6652969B1 (en) | 1999-06-18 | 2003-11-25 | Nissin Electric Co., Ltd | Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3884653T2 (de) * | 1987-04-03 | 1994-02-03 | Fujitsu Ltd | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
| JPH01309074A (ja) * | 1988-06-07 | 1989-12-13 | Minolta Camera Co Ltd | 現像剤組成物 |
| GB8818445D0 (en) * | 1988-08-03 | 1988-09-07 | Jones B L | Stm probe |
| JPH0275902A (ja) * | 1988-09-13 | 1990-03-15 | Seiko Instr Inc | ダイヤモンド探針及びその成形方法 |
| US5041201A (en) * | 1988-09-16 | 1991-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
| AU624203B2 (en) * | 1988-12-21 | 1992-06-04 | Sumitomo Electric Industries, Ltd. | Method and apparatus for producing coated optical fiber |
| ES2072321T3 (es) * | 1989-02-01 | 1995-07-16 | Siemens Ag | Capa de pasivado electroactiva. |
| AU5963990A (en) * | 1989-06-14 | 1991-01-08 | Temple University | Process for production of graphite flakes and films via low temperature pyrolysis |
| US5143709A (en) * | 1989-06-14 | 1992-09-01 | Temple University | Process for production of graphite flakes and films via low temperature pyrolysis |
| US5126206A (en) * | 1990-03-20 | 1992-06-30 | Diamonex, Incorporated | Diamond-on-a-substrate for electronic applications |
| US5252359A (en) * | 1990-03-31 | 1993-10-12 | The British Petroleum Company P.L.C. | CVD process for the manufacture of ceramic fibers |
| US5071677A (en) * | 1990-05-24 | 1991-12-10 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
| US5316795A (en) * | 1990-05-24 | 1994-05-31 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
| GB9022267D0 (en) * | 1990-10-13 | 1990-11-28 | British Petroleum Co Plc | Process for depositing a coating on a fibre |
| JPH07109034B2 (ja) * | 1991-04-08 | 1995-11-22 | ワイケイケイ株式会社 | 硬質多層膜形成体およびその製造方法 |
| US5147687A (en) * | 1991-05-22 | 1992-09-15 | Diamonex, Inc. | Hot filament CVD of thick, adherent and coherent polycrystalline diamond films |
| WO1993013243A1 (en) * | 1991-12-26 | 1993-07-08 | Elf Atochem North America, Inc. | Method and means for coating a surface with a resistant facing by chemical-vapor deposition |
| US6500488B1 (en) * | 1992-08-04 | 2002-12-31 | Northwestern Univ. | Method of forming fluorine-bearing diamond layer on substrates, including tool substrates |
| WO1994004716A1 (en) * | 1992-08-14 | 1994-03-03 | Hughes Aircraft Company | Surface preparation and deposition method for titanium nitride onto carbonaceous materials |
| US5665435A (en) * | 1995-08-31 | 1997-09-09 | University Of Pittsburgh Of The Commonwealth System Of Higher Education | Method for fluorination of diamond surfaces |
| US6287711B1 (en) | 1998-07-01 | 2001-09-11 | Front Edge Technology, Inc. | Wear-resistant coating and component |
| US7846579B2 (en) | 2005-03-25 | 2010-12-07 | Victor Krasnov | Thin film battery with protective packaging |
| US8679674B2 (en) | 2005-03-25 | 2014-03-25 | Front Edge Technology, Inc. | Battery with protective packaging |
| US7862927B2 (en) * | 2007-03-02 | 2011-01-04 | Front Edge Technology | Thin film battery and manufacturing method |
| US7862627B2 (en) | 2007-04-27 | 2011-01-04 | Front Edge Technology, Inc. | Thin film battery substrate cutting and fabrication process |
| US8870974B2 (en) * | 2008-02-18 | 2014-10-28 | Front Edge Technology, Inc. | Thin film battery fabrication using laser shaping |
| US8628645B2 (en) | 2007-09-04 | 2014-01-14 | Front Edge Technology, Inc. | Manufacturing method for thin film battery |
| US8502494B2 (en) | 2009-08-28 | 2013-08-06 | Front Edge Technology, Inc. | Battery charging apparatus and method |
| US8865340B2 (en) | 2011-10-20 | 2014-10-21 | Front Edge Technology Inc. | Thin film battery packaging formed by localized heating |
| US9887429B2 (en) | 2011-12-21 | 2018-02-06 | Front Edge Technology Inc. | Laminated lithium battery |
| US8864954B2 (en) | 2011-12-23 | 2014-10-21 | Front Edge Technology Inc. | Sputtering lithium-containing material with multiple targets |
| US9077000B2 (en) | 2012-03-29 | 2015-07-07 | Front Edge Technology, Inc. | Thin film battery and localized heat treatment |
| US9257695B2 (en) | 2012-03-29 | 2016-02-09 | Front Edge Technology, Inc. | Localized heat treatment of battery component films |
| US9159964B2 (en) | 2012-09-25 | 2015-10-13 | Front Edge Technology, Inc. | Solid state battery having mismatched battery cells |
| US8753724B2 (en) | 2012-09-26 | 2014-06-17 | Front Edge Technology Inc. | Plasma deposition on a partially formed battery through a mesh screen |
| US9356320B2 (en) | 2012-10-15 | 2016-05-31 | Front Edge Technology Inc. | Lithium battery having low leakage anode |
| US10008739B2 (en) | 2015-02-23 | 2018-06-26 | Front Edge Technology, Inc. | Solid-state lithium battery with electrolyte |
| US11377357B2 (en) * | 2016-05-11 | 2022-07-05 | Unit Cell Diamond | Methods of producing diamond particles and apparatus therefor |
| US10519539B2 (en) * | 2017-03-24 | 2019-12-31 | City University Of Hong Kong | Method for hydrogen-free diamond-like coatings having isolated carbon particle embedded within |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108089A (en) * | 1977-03-03 | 1978-09-20 | Otani Sugirou | Method of making carbon by thermal decomposition in gas phase |
| JPS5669210A (en) * | 1979-11-09 | 1981-06-10 | Mitsubishi Chem Ind Ltd | Method for depositing thermally decomposed carbon |
| JPS56146876A (en) * | 1980-01-16 | 1981-11-14 | Nat Res Dev | Adhering method and apparatus |
| JPS573706A (en) * | 1980-06-04 | 1982-01-09 | Hitachi Chem Co Ltd | Vapor-phase deposition |
| JPS5891100A (ja) * | 1981-11-25 | 1983-05-30 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3335345A (en) * | 1967-08-08 | Pyrolytic graphite | ||
| US3138435A (en) * | 1961-06-26 | 1964-06-23 | Gen Electric | Deposition apparatus and method for forming a pyrolytic graphite article |
| US3684585A (en) * | 1970-07-13 | 1972-08-15 | Materials Technology Corp | Method for forming adherent titanium carbide coatings on metal or composite substrates |
| US3771976A (en) * | 1971-01-08 | 1973-11-13 | Texas Instruments Inc | Metal carbonitride-coated article and method of producing same |
| US4040870A (en) * | 1973-05-07 | 1977-08-09 | Chemetal Corporation | Deposition method |
| US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
| US4439463A (en) * | 1982-02-18 | 1984-03-27 | Atlantic Richfield Company | Plasma assisted deposition system |
-
1982
- 1982-08-13 JP JP57141559A patent/JPS5930709A/ja active Granted
-
1985
- 1985-08-14 US US06/765,573 patent/US4873115A/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108089A (en) * | 1977-03-03 | 1978-09-20 | Otani Sugirou | Method of making carbon by thermal decomposition in gas phase |
| JPS5669210A (en) * | 1979-11-09 | 1981-06-10 | Mitsubishi Chem Ind Ltd | Method for depositing thermally decomposed carbon |
| JPS56146876A (en) * | 1980-01-16 | 1981-11-14 | Nat Res Dev | Adhering method and apparatus |
| JPS573706A (en) * | 1980-06-04 | 1982-01-09 | Hitachi Chem Co Ltd | Vapor-phase deposition |
| JPS5891100A (ja) * | 1981-11-25 | 1983-05-30 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
| JPS60261143A (ja) * | 1984-06-07 | 1985-12-24 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6270295A (ja) * | 1985-09-24 | 1987-03-31 | Sumitomo Electric Ind Ltd | ｎ型半導体ダイヤモンド膜の製造法 |
| JPS62278193A (ja) * | 1986-05-26 | 1987-12-03 | Kobe Steel Ltd | 結晶性炭素の気相合成法 |
| JPS62278192A (ja) * | 1986-05-26 | 1987-12-03 | Kobe Steel Ltd | 結晶性炭素の気相合成法 |
| JPS6433096A (en) * | 1987-04-03 | 1989-02-02 | Fujitsu Ltd | Gaseous phase synthesis for diamond |
| JPS6442313A (en) * | 1987-08-10 | 1989-02-14 | Semiconductor Energy Lab | Production of carbon |
| JPH01313393A (ja) * | 1988-06-10 | 1989-12-18 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| US5238888A (en) * | 1989-10-02 | 1993-08-24 | Kuraray Chemical Co., Ltd. | Carbon molecular sieve |
| US5391409A (en) * | 1991-04-01 | 1995-02-21 | Sumitomo Electric Industries, Ltd. | Low temperature method for synthesizing diamond with high quality by vapor phase deposition |
| US6652969B1 (en) | 1999-06-18 | 2003-11-25 | Nissin Electric Co., Ltd | Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US4873115A (en) | 1989-10-10 |
| JPH0333641B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-05-17 |
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