JPS5930294A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS5930294A JPS5930294A JP57138573A JP13857382A JPS5930294A JP S5930294 A JPS5930294 A JP S5930294A JP 57138573 A JP57138573 A JP 57138573A JP 13857382 A JP13857382 A JP 13857382A JP S5930294 A JPS5930294 A JP S5930294A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- memory device
- semiconductor memory
- word
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000003860 storage Methods 0.000 title claims abstract description 5
- 230000015654 memory Effects 0.000 claims abstract description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000003213 activating effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009028 cell transition Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000881 depressing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57138573A JPS5930294A (ja) | 1982-08-11 | 1982-08-11 | 半導体記憶装置 |
US06/517,419 US4618945A (en) | 1982-08-11 | 1983-07-26 | Semiconductor memory device |
DE19833328042 DE3328042A1 (de) | 1982-08-11 | 1983-08-03 | Halbleiter-speichervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57138573A JPS5930294A (ja) | 1982-08-11 | 1982-08-11 | 半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62122508A Division JPH0719473B2 (ja) | 1987-05-21 | 1987-05-21 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5930294A true JPS5930294A (ja) | 1984-02-17 |
JPS6258077B2 JPS6258077B2 (enrdf_load_stackoverflow) | 1987-12-03 |
Family
ID=15225285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57138573A Granted JPS5930294A (ja) | 1982-08-11 | 1982-08-11 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5930294A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975488A (ja) * | 1982-10-20 | 1984-04-28 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS59217290A (ja) * | 1983-05-25 | 1984-12-07 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体メモリ |
JPS6120292A (ja) * | 1984-07-05 | 1986-01-29 | Toshiba Corp | 半導体記憶装置 |
JPS61126689A (ja) * | 1984-11-21 | 1986-06-14 | Fujitsu Ltd | 半導体記憶装置 |
JPH02158995A (ja) * | 1988-12-09 | 1990-06-19 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPH05225779A (ja) * | 1991-12-18 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | メモリシステム |
US6044028A (en) * | 1995-10-16 | 2000-03-28 | Seiko Epson Corporation | Semiconductor storage device and electronic equipment using the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694576A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Word decoder circuit |
JPS57105884A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Cmos memory decoder circuit |
JPS57114597U (enrdf_load_stackoverflow) * | 1981-01-08 | 1982-07-15 | ||
JPS58211393A (ja) * | 1982-06-02 | 1983-12-08 | Mitsubishi Electric Corp | 半導体メモリ装置 |
-
1982
- 1982-08-11 JP JP57138573A patent/JPS5930294A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694576A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Word decoder circuit |
JPS57105884A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Cmos memory decoder circuit |
JPS57114597U (enrdf_load_stackoverflow) * | 1981-01-08 | 1982-07-15 | ||
JPS58211393A (ja) * | 1982-06-02 | 1983-12-08 | Mitsubishi Electric Corp | 半導体メモリ装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975488A (ja) * | 1982-10-20 | 1984-04-28 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS59217290A (ja) * | 1983-05-25 | 1984-12-07 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体メモリ |
JPS6120292A (ja) * | 1984-07-05 | 1986-01-29 | Toshiba Corp | 半導体記憶装置 |
JPS61126689A (ja) * | 1984-11-21 | 1986-06-14 | Fujitsu Ltd | 半導体記憶装置 |
JPH02158995A (ja) * | 1988-12-09 | 1990-06-19 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPH05225779A (ja) * | 1991-12-18 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | メモリシステム |
US6044028A (en) * | 1995-10-16 | 2000-03-28 | Seiko Epson Corporation | Semiconductor storage device and electronic equipment using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6258077B2 (enrdf_load_stackoverflow) | 1987-12-03 |
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