JPS5930294A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS5930294A
JPS5930294A JP57138573A JP13857382A JPS5930294A JP S5930294 A JPS5930294 A JP S5930294A JP 57138573 A JP57138573 A JP 57138573A JP 13857382 A JP13857382 A JP 13857382A JP S5930294 A JPS5930294 A JP S5930294A
Authority
JP
Japan
Prior art keywords
word line
memory device
semiconductor memory
word
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57138573A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258077B2 (enrdf_load_stackoverflow
Inventor
Takayasu Sakurai
貴康 桜井
Tetsuya Iizuka
飯塚　哲哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57138573A priority Critical patent/JPS5930294A/ja
Priority to US06/517,419 priority patent/US4618945A/en
Priority to DE19833328042 priority patent/DE3328042A1/de
Publication of JPS5930294A publication Critical patent/JPS5930294A/ja
Publication of JPS6258077B2 publication Critical patent/JPS6258077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57138573A 1982-08-11 1982-08-11 半導体記憶装置 Granted JPS5930294A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57138573A JPS5930294A (ja) 1982-08-11 1982-08-11 半導体記憶装置
US06/517,419 US4618945A (en) 1982-08-11 1983-07-26 Semiconductor memory device
DE19833328042 DE3328042A1 (de) 1982-08-11 1983-08-03 Halbleiter-speichervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57138573A JPS5930294A (ja) 1982-08-11 1982-08-11 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62122508A Division JPH0719473B2 (ja) 1987-05-21 1987-05-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5930294A true JPS5930294A (ja) 1984-02-17
JPS6258077B2 JPS6258077B2 (enrdf_load_stackoverflow) 1987-12-03

Family

ID=15225285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57138573A Granted JPS5930294A (ja) 1982-08-11 1982-08-11 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5930294A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975488A (ja) * 1982-10-20 1984-04-28 Mitsubishi Electric Corp 半導体メモリ装置
JPS59217290A (ja) * 1983-05-25 1984-12-07 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体メモリ
JPS6120292A (ja) * 1984-07-05 1986-01-29 Toshiba Corp 半導体記憶装置
JPS61126689A (ja) * 1984-11-21 1986-06-14 Fujitsu Ltd 半導体記憶装置
JPH02158995A (ja) * 1988-12-09 1990-06-19 Mitsubishi Electric Corp 半導体メモリ装置
JPH05225779A (ja) * 1991-12-18 1993-09-03 Internatl Business Mach Corp <Ibm> メモリシステム
US6044028A (en) * 1995-10-16 2000-03-28 Seiko Epson Corporation Semiconductor storage device and electronic equipment using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694576A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Word decoder circuit
JPS57105884A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Cmos memory decoder circuit
JPS57114597U (enrdf_load_stackoverflow) * 1981-01-08 1982-07-15
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694576A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Word decoder circuit
JPS57105884A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Cmos memory decoder circuit
JPS57114597U (enrdf_load_stackoverflow) * 1981-01-08 1982-07-15
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975488A (ja) * 1982-10-20 1984-04-28 Mitsubishi Electric Corp 半導体メモリ装置
JPS59217290A (ja) * 1983-05-25 1984-12-07 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体メモリ
JPS6120292A (ja) * 1984-07-05 1986-01-29 Toshiba Corp 半導体記憶装置
JPS61126689A (ja) * 1984-11-21 1986-06-14 Fujitsu Ltd 半導体記憶装置
JPH02158995A (ja) * 1988-12-09 1990-06-19 Mitsubishi Electric Corp 半導体メモリ装置
JPH05225779A (ja) * 1991-12-18 1993-09-03 Internatl Business Mach Corp <Ibm> メモリシステム
US6044028A (en) * 1995-10-16 2000-03-28 Seiko Epson Corporation Semiconductor storage device and electronic equipment using the same

Also Published As

Publication number Publication date
JPS6258077B2 (enrdf_load_stackoverflow) 1987-12-03

Similar Documents

Publication Publication Date Title
US7957176B2 (en) Semiconductor memory device with improved resistance to disturbance and improved writing characteristic
US5566120A (en) Apparatus and method for controlling transistor current leakage
US5311482A (en) Semiconductor integrated circuit
US5706226A (en) Low voltage CMOS SRAM
JP3024687B2 (ja) 半導体記憶装置
US20070115710A1 (en) Semiconductor memory device with hierarchical bit line structure
US4760561A (en) MOS static type RAM having a variable load
JPH0422318B2 (enrdf_load_stackoverflow)
US6795368B2 (en) Semiconductor integrated circuit device
EP0598400A2 (en) Semiconductor memory device
JPS61237292A (ja) 半導体記憶装置
EP0058051B1 (en) Static type semiconductor memory device
JPH0814995B2 (ja) 半導体メモリ
JPS5930294A (ja) 半導体記憶装置
JPH01146189A (ja) 半導体記憶装置
JP3047659B2 (ja) 半導体集積回路
JP2780621B2 (ja) 半導体記憶装置
JPS6299975A (ja) 半導体記憶回路
JP2504410B2 (ja) 半導体記憶装置
JPH0224896A (ja) 半導体メモリ
JPS59186190A (ja) 半導体集積回路装置
JPH09213074A (ja) 半導体集積回路
JPS60234292A (ja) Ｍｏｓスタテイツク型ｒａｍ
JPH05175461A (ja) マルチポートｓｒａｍ
JPS5862892A (ja) Ｍｏｓダイナミツクメモリ