JPS593017A - アモルフアスシリコンカ−バイド膜の製造方法 - Google Patents
アモルフアスシリコンカ−バイド膜の製造方法Info
- Publication number
- JPS593017A JPS593017A JP11266882A JP11266882A JPS593017A JP S593017 A JPS593017 A JP S593017A JP 11266882 A JP11266882 A JP 11266882A JP 11266882 A JP11266882 A JP 11266882A JP S593017 A JPS593017 A JP S593017A
- Authority
- JP
- Japan
- Prior art keywords
- gaseous
- film
- target
- sputtering
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 14
- 239000001257 hydrogen Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000008246 gaseous mixture Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 description 20
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11266882A JPS593017A (ja) | 1982-06-29 | 1982-06-29 | アモルフアスシリコンカ−バイド膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11266882A JPS593017A (ja) | 1982-06-29 | 1982-06-29 | アモルフアスシリコンカ−バイド膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS593017A true JPS593017A (ja) | 1984-01-09 |
| JPS639012B2 JPS639012B2 (enrdf_load_stackoverflow) | 1988-02-25 |
Family
ID=14592488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11266882A Granted JPS593017A (ja) | 1982-06-29 | 1982-06-29 | アモルフアスシリコンカ−バイド膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593017A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61243166A (ja) * | 1985-04-18 | 1986-10-29 | Matsushita Electric Ind Co Ltd | 硬質膜およびその製造方法 |
| JPS627848A (ja) * | 1985-07-04 | 1987-01-14 | Matsushita Electric Ind Co Ltd | 耐摩耗膜およびその製造方法 |
| EP0762406A1 (de) * | 1995-09-01 | 1997-03-12 | Balzers Aktiengesellschaft | Informationsträger, Verfahren zur Schichtherstellung und Anlagen hierfür |
| US5611955A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| JP2013503441A (ja) * | 2009-08-27 | 2013-01-31 | タイコ・エレクトロニクス・コーポレイション | 温度ヒューズ |
-
1982
- 1982-06-29 JP JP11266882A patent/JPS593017A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61243166A (ja) * | 1985-04-18 | 1986-10-29 | Matsushita Electric Ind Co Ltd | 硬質膜およびその製造方法 |
| JPS627848A (ja) * | 1985-07-04 | 1987-01-14 | Matsushita Electric Ind Co Ltd | 耐摩耗膜およびその製造方法 |
| US5611955A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| EP0762406A1 (de) * | 1995-09-01 | 1997-03-12 | Balzers Aktiengesellschaft | Informationsträger, Verfahren zur Schichtherstellung und Anlagen hierfür |
| WO1997009715A1 (de) * | 1995-09-01 | 1997-03-13 | Balzers Aktiengesellschaft | Informationsträger, verfahren zur schichtherstellung und anlagen hierfür |
| US5965228A (en) * | 1995-09-01 | 1999-10-12 | Balzers Aktiengesellschaft | Information carrier, method for producing same |
| JP2013503441A (ja) * | 2009-08-27 | 2013-01-31 | タイコ・エレクトロニクス・コーポレイション | 温度ヒューズ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639012B2 (enrdf_load_stackoverflow) | 1988-02-25 |
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