JPS59224164A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS59224164A
JPS59224164A JP58097826A JP9782683A JPS59224164A JP S59224164 A JPS59224164 A JP S59224164A JP 58097826 A JP58097826 A JP 58097826A JP 9782683 A JP9782683 A JP 9782683A JP S59224164 A JPS59224164 A JP S59224164A
Authority
JP
Japan
Prior art keywords
circuit
parasitic
guard ring
pad
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58097826A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430190B2 (enExample
Inventor
Yasunori Yamaguchi
山口　泰紀
Kazuyuki Miyazawa
一幸 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58097826A priority Critical patent/JPS59224164A/ja
Publication of JPS59224164A publication Critical patent/JPS59224164A/ja
Publication of JPH0430190B2 publication Critical patent/JPH0430190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58097826A 1983-06-03 1983-06-03 半導体集積回路装置 Granted JPS59224164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58097826A JPS59224164A (ja) 1983-06-03 1983-06-03 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58097826A JPS59224164A (ja) 1983-06-03 1983-06-03 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59224164A true JPS59224164A (ja) 1984-12-17
JPH0430190B2 JPH0430190B2 (enExample) 1992-05-21

Family

ID=14202527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58097826A Granted JPS59224164A (ja) 1983-06-03 1983-06-03 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59224164A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117651A (ja) * 1983-11-29 1985-06-25 Fujitsu Ltd 高耐圧保護回路装置
JPS6235663A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 半導体装置
JPS62185374A (ja) * 1986-02-10 1987-08-13 Sanyo Electric Co Ltd 入力保護回路
JPS63165857U (enExample) * 1987-04-17 1988-10-28
US4803527A (en) * 1985-06-21 1989-02-07 Hitachi, Ltd. Semiconductor integrated circuit device having semi-insulator substrate
US4819046A (en) * 1986-05-22 1989-04-04 Nec Corporation Integrated circuit with improved protective device
US4876584A (en) * 1986-09-10 1989-10-24 British Aerospace Plc Electrostatic discharge protection circuit
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
US5426323A (en) * 1993-05-04 1995-06-20 Siemens Aktiengesellschaft Integrated semiconductor circuit with ESD protection
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
JPH08288404A (ja) * 1995-04-06 1996-11-01 Ind Technol Res Inst ラッチアップのない完全に保護されたｃｍｏｓオンチップｅｓｄ保護回路
KR100425829B1 (ko) * 1999-12-28 2004-04-03 주식회사 하이닉스반도체 정전기방전 보호소자

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117651A (ja) * 1983-11-29 1985-06-25 Fujitsu Ltd 高耐圧保護回路装置
US4803527A (en) * 1985-06-21 1989-02-07 Hitachi, Ltd. Semiconductor integrated circuit device having semi-insulator substrate
JPS6235663A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 半導体装置
JPS62185374A (ja) * 1986-02-10 1987-08-13 Sanyo Electric Co Ltd 入力保護回路
US4819046A (en) * 1986-05-22 1989-04-04 Nec Corporation Integrated circuit with improved protective device
US4876584A (en) * 1986-09-10 1989-10-24 British Aerospace Plc Electrostatic discharge protection circuit
JPS63165857U (enExample) * 1987-04-17 1988-10-28
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US5426323A (en) * 1993-05-04 1995-06-20 Siemens Aktiengesellschaft Integrated semiconductor circuit with ESD protection
JPH08288404A (ja) * 1995-04-06 1996-11-01 Ind Technol Res Inst ラッチアップのない完全に保護されたｃｍｏｓオンチップｅｓｄ保護回路
KR100425829B1 (ko) * 1999-12-28 2004-04-03 주식회사 하이닉스반도체 정전기방전 보호소자

Also Published As

Publication number Publication date
JPH0430190B2 (enExample) 1992-05-21

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