JPH0430190B2 - - Google Patents

Info

Publication number
JPH0430190B2
JPH0430190B2 JP58097826A JP9782683A JPH0430190B2 JP H0430190 B2 JPH0430190 B2 JP H0430190B2 JP 58097826 A JP58097826 A JP 58097826A JP 9782683 A JP9782683 A JP 9782683A JP H0430190 B2 JPH0430190 B2 JP H0430190B2
Authority
JP
Japan
Prior art keywords
circuit
guard ring
parasitic
mos
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58097826A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59224164A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58097826A priority Critical patent/JPS59224164A/ja
Publication of JPS59224164A publication Critical patent/JPS59224164A/ja
Publication of JPH0430190B2 publication Critical patent/JPH0430190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58097826A 1983-06-03 1983-06-03 半導体集積回路装置 Granted JPS59224164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58097826A JPS59224164A (ja) 1983-06-03 1983-06-03 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58097826A JPS59224164A (ja) 1983-06-03 1983-06-03 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59224164A JPS59224164A (ja) 1984-12-17
JPH0430190B2 true JPH0430190B2 (enExample) 1992-05-21

Family

ID=14202527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58097826A Granted JPS59224164A (ja) 1983-06-03 1983-06-03 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59224164A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117651A (ja) * 1983-11-29 1985-06-25 Fujitsu Ltd 高耐圧保護回路装置
JPS61292965A (ja) * 1985-06-21 1986-12-23 Hitachi Ltd 半導体集積回路装置
JP2500802B2 (ja) * 1985-08-09 1996-05-29 株式会社 日立製作所 半導体装置
JPH0750782B2 (ja) * 1986-02-10 1995-05-31 三洋電機株式会社 入力保護回路
JPH065749B2 (ja) * 1986-05-22 1994-01-19 日本電気株式会社 半導体装置
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
JPS63165857U (enExample) * 1987-04-17 1988-10-28
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
DE59308352D1 (de) * 1993-05-04 1998-05-07 Siemens Ag Integrierte Halbleiterschaltung mit einem Schutzmittel
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
KR100425829B1 (ko) * 1999-12-28 2004-04-03 주식회사 하이닉스반도체 정전기방전 보호소자

Also Published As

Publication number Publication date
JPS59224164A (ja) 1984-12-17

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